Patents by Inventor Sai-Wing Tsang

Sai-Wing Tsang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • METHOD FOR FABRICATING A LAYER OF MATERIAL IN AN ORGANIC ELECTRONIC STRUCTURE, AN ORGANIC ELECTRONIC STRUCTURE AND A PEROVSKITE PRECURSOR INK FOR USE IN FABRICATING THE SAME
    Publication number: 20190189363
    Abstract: A method for fabricating a layer of material in an organic electronic structure, an organic electronic structure and a perovskite precursor ink for use in fabricating the same. The method includes the steps of: reducing moisture and oxygen content on a surface of a substrate; depositing the material contained in a solution on the surface of the substrate; and facilitating crystallization of the material contained in the solution applied on the surface so as to form the layer of material.
    Type: Application
    Filed: December 19, 2017
    Publication date: June 20, 2019
    Inventors: Sai Wing Tsang, Yuanhang Cheng, Xiuwen Xu, Yuemin Xie
  • METAL OXIDE INK, A METHOD FOR MANUFACTURING THE SAME AND A METHOD FOR MANUFACTURING AN ORGANIC ELECTRONIC STRUCTURE
    Publication number: 20190185695
    Abstract: A metal oxide ink, a method for manufacturing the metal oxide ink and a method for manufacturing an organic electronic structure using the metal oxide ink. The metal oxide ink includes: a plurality of metal oxide particles suspended in a solvent; and a stabilizer arranged to stabilize the metal oxide particles with a plurality of ligands; wherein the plurality of ligands are arranged to self-dissociate upon a drying process of the solvent.
    Type: Application
    Filed: December 19, 2017
    Publication date: June 20, 2019
    Inventors: Sai Wing Tsang, Binbin Yu, Yuanhang Cheng, Yuhui Ma
  • Air stable infrared photodetectors from solution-processed inorganic semiconductors
    Patent number: 9985153
    Abstract: A photodetector has a photoactive layer of semiconducting inorganic nanoparticles positioned between a hole transport electron blocking layer of a first metal oxide and an electron transport hole blocking layer of a second metal oxide. The nanoparticles are responsive to electromagnetic radiation in at least the infrared region of the spectrum. The first metal oxide can be NiO, and the second metal oxide can be ZnO or TiO2. The metal oxide layers render the photodetector stable in air, even in the absence of an encapsulating coating around the photodetector. The photodetector has a P-I-N structure.
    Type: Grant
    Filed: August 29, 2014
    Date of Patent: May 29, 2018
    Assignee: University of Florida Research Foundation, Incorporated
    Inventors: Franky So, Jesse Robert Manders, Song Chen, Erik D. Klump, Tzhung-Han Lai, Sai-Wing Tsang
  • AIR STABLE INFRARED PHOTODETECTORS FROM SOLUTION-PROCESSED INORGANIC SEMICONDUCTORS
    Publication number: 20160211392
    Abstract: A photodetector has a photoactive layer of semiconducting inorganic nanoparticles positioned between a hole transport electron blocking layer of a first metal oxide and an electron transport hole blocking layer of a second metal oxide. The nanoparticles are responsive to electromagnetic radiation in at least the infrared region of the spectrum. The first metal oxide can be NiO, and the second metal oxide can be ZnO or TiO2. The metal oxide layers render the photodetector stable in air, even in the absence of an encapsulating coating around the photodetector. The photodetector has a P-I-N structure.
    Type: Application
    Filed: August 29, 2014
    Publication date: July 21, 2016
    Applicant: University of Florida Research Foundation, Inc.
    Inventors: Franky So, Jesse Robert Manders, Song Chen, Erick D. Klump, Tzhung-Han Lai, Sai-Wing Tsang