Abstract: A method for removing native oxides from a substrate surface is provided. In one embodiment, the method comprises positioning a substrate having an oxide layer into a processing chamber, exposing the substrate to a gas mixture while forming a volatile film on the substrate and maintaining the substrate at a temperature below 65° C., heating the substrate to a temperature of at least about 75° C. to sublimate the volatile film and remove the oxide layer, and depositing a first layer on the substrate after heating the substrate.

Abstract: A method for removing native oxides from a substrate surface is provided. In one embodiment, the method comprises positioning a substrate having an oxide layer into a processing chamber, exposing the substrate to a gas mixture while forming a volatile film on the substrate and maintaining the substrate at a temperature below 65° C., heating the substrate to a temperature of at least about 75° C. to sublimate the volatile film and remove the oxide layer, and depositing a first layer on the substrate after heating the substrate.

Abstract: A method for removing native oxides from a substrate surface is provided. In one embodiment, the method comprises positioning a substrate having an oxide layer into a processing chamber, generating a plasma of a reactive species from a gas mixture within the processing chamber, exposing the substrate to the reactive species while forming a volatile film on the substrate and maintaining the substrate at a temperature below 65° C., heating the substrate to a temperature of at least about 75° C. to vaporize the volatile film and remove the oxide layer, and depositing a first layer on the substrate after heating the substrate.

Abstract: In one embodiment, a method for removing native oxides from a substrate surface is provided which includes supporting a substrate containing silicon oxide within a processing chamber, generating a plasma of reactive species from a gas mixture within the processing chamber, cooling the substrate to a first temperature of less than about 65° C. within the processing chamber, and directing the reactive species to the cooled substrate to react with the silicon oxide thereon while forming a film on the substrate. The film usually contains ammonium hexafluorosilicate. The method further provides positioning the substrate in close proximity to a gas distribution plate, and heating the substrate to a second temperature of about 100° C. or greater within the processing chamber to sublimate or remove the film. The gas mixture may contain ammonia, nitrogen trifluoride, and a carrier gas.

Abstract: A method for removing native oxides from a substrate surface is provided. In one embodiment, the method comprises positioning a substrate having an oxide layer into a processing chamber, generating a plasma of a reactive species from a gas mixture within the processing chamber, exposing the substrate to the reactive species while forming a volatile film on the substrate and maintaining the substrate at a temperature below 65° C., heating the substrate to a temperature of at least about 75° C. to vaporize the volatile film and remove the oxide layer, and depositing a first layer on the substrate after heating the substrate.

Abstract: A lid assembly for semiconductor processing is provided. In at least one embodiment, the lid assembly includes a first electrode comprising an expanding section that has a gradually increasing inner diameter. The lid assembly also includes a second electrode disposed opposite the first electrode. A plasma cavity is defined between the inner diameter of the expanding section of the first electrode and a first surface of the second electrode.

Abstract: In one embodiment, a method for removing native oxides from a substrate surface is provided which includes supporting a substrate containing silicon oxide within a processing chamber, generating a plasma of reactive species from a gas mixture within the processing chamber, cooling the substrate to a first temperature of less than about 65° C. within the processing chamber, and directing the reactive species to the cooled substrate to react with the silicon oxide thereon while forming a film on the substrate. The film usually contains ammonium hexafluorosilicate. The method further provides positioning the substrate in close proximity to a gas distribution plate, and heating the substrate to a second temperature of about 100° C. or greater within the processing chamber to sublimate or remove the film. The gas mixture may contain ammonia, nitrogen trifluoride, and a carrier gas.

Abstract: A method for removing native oxides from a substrate surface is provided. In at least one embodiment, the method includes supporting the substrate surface in a vacuum chamber and generating reactive species from a gas mixture within the chamber. The substrate surface is then cooled within the chamber and the reactive species are directed to the cooled substrate surface to react with the native oxides thereon and form a film on the substrate surface. The substrate surface is then heated within the chamber to vaporize the film.

Abstract: A method and apparatus for removing native oxides from a substrate surface is provided. In one aspect, the chamber comprises a chamber body and a support assembly at least partially disposed within the chamber body and adapted to support a substrate thereon. The support assembly includes one or more fluid channels at least partially formed therein and capable of cooling the substrate. The chamber further comprises a lid assembly disposed on an upper surface of the chamber body. The lid assembly includes a first electrode and a second electrode which define a plasma cavity therebetween, wherein the second electrode is adapted to connectively heat the substrate.

Abstract: A substrate support assembly and method for supporting a substrate are provided. In at least one embodiment, the support assembly includes a body having one or more fluid conduits disposed therethrough, and a support member disposed on a first end of the body. The support member includes one or more fluid channels formed in an upper surface thereof, wherein each fluid channel is in communication with the one or more of the fluid conduits. The support assembly also includes a cooling medium source in fluid communication with the one or more fluid conduits, and a first electrode having a plurality of holes formed therethrough. The first electrode is disposed on the upper surface of the support member such that each of the plurality of holes is in fluid communication with at least one of the one or more fluid channels formed in the upper surface of the support member.

Abstract: A lid assembly for semiconductor processing is provided. In at least one embodiment, the lid assembly includes a first electrode comprising an expanding section that has a gradually increasing inner diameter. The lid assembly also includes a second electrode disposed opposite the first electrode. A plasma cavity is defined between the inner diameter of the expanding section of the first electrode and a first surface of the second electrode.

Abstract: A method for removing native oxides from a substrate surface is provided. In at least one embodiment, the method includes supporting the substrate surface in a vacuum chamber and generating reactive species from a gas mixture within the chamber. The substrate surface is then cooled within the chamber and the reactive species are directed to the cooled substrate surface to react with the native oxides thereon and form a film on the substrate surface. The substrate surface is then heated within the chamber to vaporize the film.

Abstract: A substrate support assembly for supporting a substrate during processing is provided. In one embodiment, a support assembly includes a top ceramic plate having a first side, a bottom ceramic plate having a first side and an embedded electrode, the first side of the bottom plate fused to the first side of the top plate defining a channel therebetween. In another embodiment, a support assembly includes a first plate having a first side and second side. A ring is disposed on the first side. A stepped surface is formed on the first side radially inward of the ring. A second plate is connected to the second side of the first plate.

Abstract: In one embodiment of the present invention, an integral lid assembly (10) for sealing a substrate processing chamber includes first (16) and third (12) plates fixedly fused to a second plate (14) positioned therebetween. The first and second plates define a coolant passage (110) or channel therein, and the second and third plates define a gas delivery channel(s) (146, 148) therein. The first plate has a substantially planar surface for coupling to a processing chamber, and the third plate has a substantially planar surface for coupling to a microwave generation device or a remote plasma clean device (106). In this manner, the lid assembly is compact in size, and facilitates the mounting of a microwave device closer to the chamber than for bulkier lid assemblies. In another embodiment, gas passages (232) through the brazed lid assembly (200) are coupled to the processing chamber (310), and are configured to provide the desired gas distribution thereto for exemplary processes.