Patents by Inventor Salvador P. Umotoy
Salvador P. Umotoy has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10280509Abstract: Embodiments of the disclosure generally relate to apparatuses for processing substrates. In one embodiment, a substrate processing system is provided and includes a lid having an upper lid surface opposed to a lower lid surface, a plurality of gas inlet passages extending from the upper lid surface to the lower lid surface, a gas manifold disposed on the lid, at least one valve coupled with the gas manifold and configured to control a gas flow through one of the gas inlet passages, wherein the at least one valve is configured to provide an open and close cycle having a time period of less than about 1 second during a gas delivery cycle for enabling an atomic layer deposition process. The substrate processing system further contains a gas reservoir fluidly connected between the gas manifold and at least one precursor source.Type: GrantFiled: March 7, 2017Date of Patent: May 7, 2019Assignee: APPLIED MATERIALS, INC.Inventors: Gwo-Chuan Tzu, Salvador P. Umotoy
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Publication number: 20170241020Abstract: Embodiments of the disclosure generally relate to apparatuses for processing substrates. In one embodiment, a substrate processing system is provided and includes a lid having an upper lid surface opposed to a lower lid surface, a plurality of gas inlet passages extending from the upper lid surface to the lower lid surface, a gas manifold disposed on the lid, at least one valve coupled with the gas manifold and configured to control a gas flow through one of the gas inlet passages, wherein the at least one valve is configured to provide an open and close cycle having a time period of less than about 1 second during a gas delivery cycle for enabling an atomic layer deposition process. The substrate processing system further contains a gas reservoir fluidly connected between the gas manifold and at least one precursor source.Type: ApplicationFiled: March 7, 2017Publication date: August 24, 2017Inventors: Gwo-Chuan TZU, Salvador P. UMOTOY
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Patent number: 9587310Abstract: Embodiments of the invention generally relate to apparatuses for processing substrates. In one embodiment, a substrate processing system is provided and includes a lid having an upper lid surface opposed to a lower lid surface, a plurality of gas inlet passages extending from the upper lid surface to the lower lid surface, a gas manifold disposed on the lid, at least one valve coupled with the gas manifold and configured to control a gas flow through one of the gas inlet passages, wherein the at least one valve is configured to provide an open and close cycle having a time period of less than about 1 second during a gas delivery cycle for enabling an atomic layer deposition process. The substrate processing system further contains a gas reservoir fluidly connected between the gas manifold and at least one precursor source.Type: GrantFiled: January 10, 2014Date of Patent: March 7, 2017Assignee: Applied Materials, Inc.Inventors: Gwo-Chuan Tzu, Salvador P. Umotoy
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Patent number: 9017776Abstract: Embodiments of the invention provide apparatuses and methods for atomic layer deposition (ALD), such as plasma-enhanced ALD (PE-ALD). In some embodiments, a PE-ALD chamber is provided which includes a chamber lid assembly coupled with a chamber body having a substrate support therein. In one embodiment, the chamber lid assembly has an inlet manifold assembly containing an annular channel encompassing a centralized channel, wherein the centralized channel extends through the inlet manifold assembly, and the inlet manifold assembly further contains injection holes extending from the annular channel, through a sidewall of the centralized channel, and to the centralized channel.Type: GrantFiled: September 24, 2012Date of Patent: April 28, 2015Assignee: Applied Materials, Inc.Inventors: Hyman W. H. Lam, Bo Zheng, Hua Ai, Michael Jackson, Xiaoxiong Yuan, Hou Gong Wang, Salvador P. Umotoy, Sang Ho Yu
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Patent number: 8821637Abstract: Embodiments of the invention provide apparatuses for vapor depositing tungsten-containing materials, such as metallic tungsten and tungsten nitride. In one embodiment, a processing chamber is provided which includes a lid assembly containing a lid plate, a showerhead, a mixing cavity, a distribution cavity, and a resistive heating element contained within the lid plate. In one example, the resistive heating element is configured to provide the lid plate at a temperature within a range from about 120° C. to about 180° C., preferably, from about 140° C. to about 160° C., more preferably, from about 145° C. to about 155° C. The mixing cavity may be in fluid communication with a tungsten precursor source containing tungsten hexafluoride and a nitrogen precursor source containing ammonia. In some embodiments, a single processing chamber may be used to deposit metallic tungsten and tungsten nitride materials by CVD processes.Type: GrantFiled: January 29, 2008Date of Patent: September 2, 2014Assignee: Applied Materials, Inc.Inventors: Avgerinos V. Gelatos, Sang-Hyeob Lee, Xiaoxiong Yuan, Salvador P. Umotoy, Yu Chang, Gwo-Chuan Tzu, Emily Renuart, Jing Lin, Wing-Cheong Lai, Sang Q. Le
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Publication number: 20140190411Abstract: Embodiments of the invention generally relate to apparatuses for processing substrates. In one embodiment, a substrate processing system is provided and includes a lid having an upper lid surface opposed to a lower lid surface, a plurality of gas inlet passages extending from the upper lid surface to the lower lid surface, a gas manifold disposed on the lid, at least one valve coupled with the gas manifold and configured to control a gas flow through one of the gas inlet passages, wherein the at least one valve is configured to provide an open and close cycle having a time period of less than about 1 second during a gas delivery cycle for enabling an atomic layer deposition process. The substrate processing system further contains a gas reservoir fluidly connected between the gas manifold and at least one precursor source.Type: ApplicationFiled: January 10, 2014Publication date: July 10, 2014Applicant: Applied Materials, Inc.Inventors: GWO-CHUAN TZU, SALVADOR P. UMOTOY
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Patent number: 8747556Abstract: Embodiments of the invention provide apparatuses and methods for atomic layer deposition (ALD), such as plasma-enhanced ALD (PE-ALD). In some embodiments, a PE-ALD chamber is provided which includes a chamber lid assembly coupled with a chamber body having a substrate support therein. In one embodiment, the chamber lid assembly has an inlet manifold assembly containing an annular channel encompassing a centralized channel, wherein the centralized channel extends through the inlet manifold assembly, and the inlet manifold assembly further contains injection holes extending from the annular channel, through a sidewall of the centralized channel, and to the centralized channel.Type: GrantFiled: September 14, 2012Date of Patent: June 10, 2014Assignee: Applied Materials, Inc.Inventors: Hyman W. H. Lam, Bo Zheng, Hua Ai, Michael Jackson, Xiaoxiong Yuan, Hougong Wang, Salvador P. Umotoy, Sang Ho Yu
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Publication number: 20140087091Abstract: Embodiments of the invention provide apparatuses and methods for atomic layer deposition (ALD), such as plasma-enhanced ALD (PE-ALD). In some embodiments, a PE-ALD chamber is provided which includes a chamber lid assembly coupled with a chamber body having a substrate support therein. In one embodiment, the chamber lid assembly has an inlet manifold assembly containing an annular channel encompassing a centralized channel, wherein the centralized channel extends through the inlet manifold assembly, and the inlet manifold assembly further contains injection holes extending from the annular channel, through a sidewall of the centralized channel, and to the centralized channel.Type: ApplicationFiled: September 24, 2012Publication date: March 27, 2014Applicant: Applied Materials, Inc.Inventors: Hyman W.H. Lam, Bo Zheng, Hua Ai, Michael Jackson, Xiaoxiong Yuan, Hougong Wang, Salvador P. Umotoy, San H. Yu
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Publication number: 20140076234Abstract: A multi-chamber processing system includes a transfer chamber, a first processing chamber outfitted to perform CVD, a second processing chamber, and a robot positioned to transfer substrates between the transfer chamber, the first processing chamber, and the second processing chamber. The second processing chamber may include one or a combination of a first electrode and a second electrode comprising a plasma cavity formed therein.Type: ApplicationFiled: October 18, 2013Publication date: March 20, 2014Applicant: APPLIED MATERIALS, INC.Inventors: Chien-Teh KAO, Jing-Pei Connie CHOU, Chiukin (Steven) LAI, Salvador P. UMOTOY, Joel M. HUSTON, Son TRINH, Mei CHANG, Xiaoxiong YUAN, Yu CHANG, Xinliang LU, Wei W. WANG, See-Eng PHAN
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Publication number: 20130008984Abstract: Embodiments of the invention provide apparatuses and methods for atomic layer deposition (ALD), such as plasma-enhanced ALD (PE-ALD). In some embodiments, a PE-ALD chamber is provided which includes a chamber lid assembly coupled with a chamber body having a substrate support therein. In one embodiment, the chamber lid assembly has an inlet manifold assembly containing an annular channel encompassing a centralized channel, wherein the centralized channel extends through the inlet manifold assembly, and the inlet manifold assembly further contains injection holes extending from the annular channel, through a sidewall of the centralized channel, and to the centralized channel.Type: ApplicationFiled: September 14, 2012Publication date: January 10, 2013Applicant: APPLIED MATERIALS, INC.Inventors: Hyman Lam, Bo Zheng, Hua Ai, Michael Jackson, Xiaoxiong (John) Yuan, Hou Gong Wang, Salvador P. Umotoy, Sang Ho Yu
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Patent number: 8293015Abstract: Embodiments of the invention provide apparatuses and methods for atomic layer deposition (ALD), such as plasma-enhanced ALD (PE-ALD). In some embodiments, a PE-ALD chamber is provided which includes a chamber lid assembly coupled with a chamber body having a substrate support therein. In one embodiment, the chamber lid assembly has an inlet manifold assembly containing an annular channel encompassing a centralized channel, wherein the centralized channel extends through the inlet manifold assembly, and the inlet manifold assembly further contains injection holes extending from the annular channel, through a sidewall of the centralized channel, and to the centralized channel.Type: GrantFiled: September 14, 2011Date of Patent: October 23, 2012Assignee: Applied Materials, Inc.Inventors: Hyman W. H. Lam, Bo Zheng, Hua Ai, Michael Jackson, Xiaoxiong Yuan, Hougong Wang, Salvador P. Umotoy, Sang Ho Yu
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Patent number: 8291857Abstract: Embodiments of the invention provide apparatuses and methods for atomic layer deposition (ALD), such as plasma-enhanced ALD (PE-ALD). In some embodiments, a PE-ALD chamber is provided which includes a chamber lid assembly coupled with a chamber body having a substrate support therein. In one embodiment, the chamber lid assembly has an inlet manifold assembly containing an annular channel encompassing a centralized channel, wherein the centralized channel extends through the inlet manifold assembly, and the inlet manifold assembly further contains injection holes extending from the annular channel, through a sidewall of the centralized channel, and to the centralized channel.Type: GrantFiled: June 30, 2009Date of Patent: October 23, 2012Assignee: Applied Materials, Inc.Inventors: Hyman Lam, Bo Zheng, Hua Ai, Michael Jackson, Xiaoxiong (John) Yuan, Hou Gong Wang, Salvador P. Umotoy, Sang Ho Yu
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Patent number: 8123860Abstract: An apparatus for cyclical depositing of thin films on semiconductor substrates, comprising a process chamber having a gas distribution system with separate paths for process gases and an exhaust system synchronized with operation of valves dosing the process gases into a reaction region of the chamber.Type: GrantFiled: October 30, 2008Date of Patent: February 28, 2012Assignee: Applied Materials, Inc.Inventors: Randhir P. S. Thakur, Alfred W. Mak, Ming Xi, Walter Benjamin Glenn, Ahmad A. Khan, Ayad A. Al-Shaikh, Avgerinos V. Gelatos, Salvador P. Umotoy
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Publication number: 20120000422Abstract: Embodiments of the invention provide apparatuses and methods for atomic layer deposition (ALD), such as plasma-enhanced ALD (PE-ALD). In some embodiments, a PE-ALD chamber is provided which includes a chamber lid assembly coupled with a chamber body having a substrate support therein. In one embodiment, the chamber lid assembly has an inlet manifold assembly containing an annular channel encompassing a centralized channel, wherein the centralized channel extends through the inlet manifold assembly, and the inlet manifold assembly further contains injection holes extending from the annular channel, through a sidewall of the centralized channel, and to the centralized channel.Type: ApplicationFiled: September 14, 2011Publication date: January 5, 2012Applicant: APPLIED MATERIALS, INC.Inventors: Hyman Lam, Bo Zheng, Hua Ai, Michael Jackson, Xiaoxiong (John) Yuan, Hou Gong Wang, Salvador P. Umotoy, Sang Ho Yu
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Publication number: 20110114020Abstract: Embodiments of the invention generally relate to apparatuses for processing substrates. In one embodiment, a substrate processing system for sequential deposition or atomic layer deposition (ALD) is provided and includes a lid assembly coupled with a chamber housing, wherein the lid assembly contains a lid having a plurality of controllable flow channels extending from an upper lid surface, through the lid, and to a lower lid surface, a gas manifold disposed on the lid, and at least one valve coupled with the gas manifold and adapted to control a gas flow through one of the controllable flow channels. The substrate processing system further contains a gas reservoir disposed between a first gas line and a second gas line, and the gas reservoir is fluidly connected to the gas manifold by the second gas line.Type: ApplicationFiled: January 24, 2011Publication date: May 19, 2011Inventors: GWO-CHUAN TZU, Salvador P. Umotoy
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Patent number: 7905959Abstract: A lid assembly for a semiconductor processing system is provided. The lid assembly generally includes a lid having first and second opposed surfaces, a plurality of controllable flow channels extending from the first and second opposed surfaces and a gas control system disposed on the first surface and operably opening and closing the channels. The gas control system includes a gas manifold disposed on the lid, at least one valve coupled to the gas manifold and adapted to control a flow through one of the flow channels, a reservoir fluidly connected to the gas manifold, and a precursor source fluidly connected to the reservoir.Type: GrantFiled: November 19, 2004Date of Patent: March 15, 2011Assignee: Applied Materials, Inc.Inventors: Gwo-Chuan Tzu, Salvador P. Umotoy
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Patent number: 7705275Abstract: A substrate support comprises top, middle and bottom plates which are brazed together. The top plate has a top surface with a plurality of outwardly projecting mesas dispersed across a recessed pocket, a network of recessed grooves, a vacuum port terminating in the recessed grooves, and plurality of gas ports. The middle plate has a plurality of middle feedthroughs aligned to corresponding top feedthroughs of the top plate, and the bottom plate has a plurality of bottom feedthroughs aligned to the middle feedthroughs of the middle plate. The top and middle plates are joined by a first brazed bond layer and the middle and bottom plates are joined by a second brazed bond layer.Type: GrantFiled: August 17, 2006Date of Patent: April 27, 2010Assignee: Applied Materials, Inc.Inventors: Salvador P. Umotoy, Lawrence Chung-Lai Lei, Gwo-chun Tzu, Xiangxiong (John) Yuan, Michael S. Jackson, Hymam Lam
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Publication number: 20100003406Abstract: Embodiments of the invention provide apparatuses and methods for atomic layer deposition (ALD), such as plasma-enhanced ALD (PE-ALD). In some embodiments, a PE-ALD chamber is provided which includes a chamber lid assembly coupled with a chamber body having a substrate support therein. In one embodiment, the chamber lid assembly has an inlet manifold assembly containing an annular channel encompassing a centralized channel, wherein the centralized channel extends through the inlet manifold assembly, and the inlet manifold assembly further contains injection holes extending from the annular channel, through a sidewall of the centralized channel, and to the centralized channel.Type: ApplicationFiled: June 30, 2009Publication date: January 7, 2010Applicant: APPLIED MATERIALS, INC.Inventors: Hyman Lam, Bo Zheng, Hua Ai, Michael Jackson, Xiaoxiong (John) Yuan, Hou Gong Wang, Salvador P. Umotoy, Sang Ho Yu
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Publication number: 20090205703Abstract: The present invention generally relates to a simple and cost effective device and method for mounting and supporting solar panels. A solar panel according to the present invention is supported from the backside via a plurality of elongated support members. The elongated support members may have open V-shaped or W-shaped arrangements and may be adhered to the solar panels through strong, flexible glue or double-sided tape that withstands significant environmental loads, such as wind uploading, yet remain flexible enough to minimize stress concentrations in the solar panels. The support members may be attached to a solar panel by a support member attachment module incorporated into an automated solar panel production line. A plurality of solar panels may be field mounted to a solar panel support structure having one or more piles or the like with at least a lower and upper transverse support rails spanning the plurality of solar panels.Type: ApplicationFiled: February 10, 2009Publication date: August 20, 2009Applicant: APPLIED MATERIALS, INC.Inventors: Salvador P. Umotoy, Jeffrey S. Sullivan, Mike Brennan, Charles Gay, Theodossios V. Costuros, Gary D. Williams, Oscar Gomez
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Publication number: 20090056626Abstract: An apparatus for cyclical depositing of thin films on semiconductor substrates, comprising a process chamber having a gas distribution system with separate paths for process gases and an exhaust system synchronized with operation of valves dosing the process gases into a reaction region of the chamber.Type: ApplicationFiled: October 30, 2008Publication date: March 5, 2009Inventors: RANDHIR P.S. THAKUR, Alfred W. Mak, Ming Xi, Walter Benjamin Glenn, Ahmad A. Khan, Ayad A. Al-Shaikh, Avgerinos V. Gelatos, Salvador P. Umotoy