Abstract: A system may include a first semiconductor processing station configured to deposit a material on a first semiconductor wafer and a chemical tank that provides liquid to the processing station during a deposition process. The chemical tank may provide measurements of characteristics of the liquid to a controller. The controller may be configured to receive the measurements from the chemical tank; provide an input based on the measurements to a trained model that is configured to generate an output that adjusts an operating parameter of the first station such that the thickness uniformity of the material is closer to a target thickness uniformity; and cause the first station to deposit the material on a second wafer using the operating parameter as adjusted by the output.

Abstract: A method of plating substrates may include placing a substrate in a plating chamber comprising a liquid, and applying a current to the liquid in the plating chamber to deposit a metal on exposed portions of the substrate, where the current may include alternating cycles of a forward plating current and a reverse deplating current. To determine the current characteristics, a model of a substrate may be simulated during the plating process to generate data points that relate characteristics of the plating process and a pattern on the substrate to a range nonuniformity of material formed on the substrate during the plating process. Using information from the data points, values for the forward and reverse currents may be derived and provided to the plating chamber to execute the plating process.

Abstract: A non-uniform initial metal film is non-uniformly deplated to provide a more uniform metal film on a substrate. Electrochemical deplating may be performed by placing the substrate in a deplating bath formulated specifically for deplating, rather than for plating. The deplating bath may have a throwing power of 0.3 or less; or a bath conductivity of 1 mS/cm to 250 mS/cm. Reverse electrical current conducted through the deplating bath non-uniformly. electro-etches or deplates the metal film.

Abstract: A method for electrochemically processing a microfeature workpiece includes contacting the first surface of the microfeature workpiece with a plating electrolyte in a plating chamber, wherein the plating electrolyte includes at least one metal ion, flowing the plating electrolyte from a first plating electrolyte inlet at the first end of the workpiece to a second plating electrolyte outlet at the second end of the workpiece across the center point of the workpiece, and electrochemically depositing the at least one metal ion onto the first surface of the workpiece. Another method for electrochemically processing a microfeature workpiece includes contacting a first surface of the microfeature workpiece with a plating electrolyte having at least one metal ion, heating the second surface of the workpiece using a heating method, and electrochemically depositing the at least one metal ion onto the first surface of the workpiece.

Abstract: A non-uniform initial metal film is non-unniformly deplated to provide a more uniform metal film on a substrate. Electrochemical deplating may be performed by placing the substrate in a deplating bath formulated specifically for deplating, rather than for plating. The deplating bath may have a throwing power of 0.3 or less; or a bath conductivity of 1 mS/cm to 250 mS/cm. Reverse electrical current conducted through the deplating bath non-uniformly. electro-etches or deplates the metal film.

Abstract: In electroplating a wafer, the front and/or back side of the wafer is heated or cooled during processing. The wafer may be in contact with a backing plate of an electroplating processor. The backing plate may be heated via electrical heaters, by radiant heaters, or via a heated liquid or gas. The backing plate may alternatively be cooled using electric coolers or cooled liquid or gas. The heated or cooled backing plate then heats or cools the back side of the wafer largely via conduction.