Abstract: A sensor device (100) comprises an emitter device (106) arranged to emit electromagnetic radiation and having an emission region associated therewith. The sensor device (100) also comprises a detector device (108) arranged to receive electromagnetic radiation and having a detection region associated therewith, and an optical system (122). The emission region is spaced at a predetermined distance from the detection region. The optical system (122) defines a plurality of principal rays, a number of the plurality of principal rays intersecting the detection region. The number of the plurality of principal rays also intersect the emission region.

Abstract: A sensor device (100) comprises an emitter device (106) arranged to emit electromagnetic radiation and having an emission region associated therewith. The sensor device (100) also comprises a detector device (108) arranged to receive electromagnetic radiation and having a detection region associated therewith, and an optical system (122). The emission region is spaced at a predetermined distance from the detection region. The optical system (122) defines a plurality of principal rays, a number of the plurality of principal rays intersecting the detection region. The number of the plurality of principal rays also intersect the emission region.

Abstract: The present invention relates to an integrated infrared sensor device, comprising a sensor substrate and a filter substrate. The sensor substrate has a back surface and a front surface opposite the back surface, in which the back surface has a cavity defined therein and the front surface has at least one infrared sensing element formed therein or arranged thereon, covered with a cap for protecting the at least one sensing element, e.g. against mechanical damage and dust, and/or against stray radiation. The filter substrate is arranged on the back surface of the sensor substrate such that the filter substrate at least partially covers the cavity. The filter substrate is adapted in shape and composition to transmit infrared radiation and to attenuate radiation in at least part of the visible light spectrum.

Abstract: A method of producing a substantially rectangular semiconductor device having at least one corner truncation or corner cut-out or side cut-out, comprises: a) providing a semiconductor substrate; b) making at least one opening through the substrate by means of etching; and c) cutting the substrate along a first pair of parallel lines, and along a second pair of parallel lines perpendicular to the first pair. At least one line of the first/second pair passes through said opening. Two lines may pass through said opening. More than one opening may be provided for said device. The opening may be located at a corner or on a side of the otherwise rectangular device. The etching may be any combination of existing isotropic/anisotropic front/back etching techniques.

Abstract: An infrared sensor for temperature sensing comprises a cap covering a substrate; an IR-radiation filtering window in the cap transparent to IR radiation; a first sensing element comprising a set of N thermocouples on the substrate covered by the cap, whose hot junctions may receive radiation; a second sensing element comprising a set of N thermocouples on the substrate covered by the cap whose hot junctions may not receive radiation; first connection modules for connecting a number N1 of thermocouples of the first sensing element, second connection modules for connecting a number N2 of thermocouples of the second sensing; connecting means for connecting an output of the first connection modules of the first sensing element with an output of the second connection modules of the second sensing element, and an output of the combined outputs of the sensing elements.

Abstract: An infrared sensor for temperature sensing comprises a cap covering a substrate; an IR-radiation filtering window in the cap transparent to IR radiation; a first sensing element comprising a set of N thermocouples on the substrate covered by the cap, whose hot junctions may receive radiation; a second sensing element comprising a set of N thermocouples on the substrate covered by the cap whose hot junctions may not receive radiation; first connection modules for connecting a number N1 of thermocouples of the first sensing element, second connection modules for connecting a number N2 of thermocouples of the second sensing; connecting means for connecting an output of the first connection modules of the first sensing element with an output of the second connection modules of the second sensing element, and an output of the combined outputs of the sensing elements.

Abstract: An infrared sensor for temperature sensing comprises a cap covering a substrate; an IR-radiation filtering window in the cap transparent to IR radiation; a first sensing element comprising a set of N thermocouples on the substrate covered by the cap, whose hot junctions may receive radiation; a second sensing element comprising a set of N thermocouples on the substrate covered by the cap whose hot junctions may not receive radiation; first connection modules for connecting a number N1 of thermocouples of the first sensing element, second connection modules for connecting a number N2 of thermocouples of the second sensing; connecting means for connecting an output of the first connection modules of the first sensing element with an output of the second connection modules of the second sensing element, and an output of the combined outputs of the sensing elements.

Abstract: The present invention relates to an integrated infrared sensor device, comprising a sensor substrate and a filter substrate. The sensor substrate has a back surface and a front surface opposite the back surface, in which the back surface has a cavity defined therein and the front surface has at least one infrared sensing element formed therein or arranged thereon, covered with a cap for protecting the at least one sensing element, e.g. against mechanical damage and dust, and/or against stray radiation. The filter substrate is arranged on the back surface of the sensor substrate such that the filter substrate at least partially covers the cavity. The filter substrate is adapted in shape and composition to transmit infrared radiation and to attenuate radiation in at least part of the visible light spectrum.

Abstract: An imaging system comprises a local processing unit with a plurality of components or subsystems, which for the purposes of illustration comprise five variously interconnected components or subsystems, 113, 123, 133, 143, 153. Some or all of the subsystems, 113, 123, 133, 143, 153, are adapted to generate test signals. The test signals may be additional dummy pixels or lines of pixels, which are appended, embedded or injected into the normal signal path in a manner than causes them to be processed through the local processing unit in the same manner as the normal data signals or normal data stream generated by each component or subsystem, 113, 123, 133, 143, 153. In this manner the test signals acquire characteristics indicative of the performance of the components or subsystems, 113, 123, 133, 143, 153, through which they have passed. The combined data signal is output to the central processing unit 105 via data link 104.