Patents by Inventor Sam-Young Kim
Sam-Young Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11918521Abstract: A foldable ramp according to an embodiment is configured to assist a movement of means of transportation which may be used by disabled people, such as a wheelchair. The foldable ramp may be used as a stand for a billboard, and the foldable ramp may be unfolded to be used as a ramp.Type: GrantFiled: September 15, 2022Date of Patent: March 5, 2024Assignee: HUMAN TECHNOLOGY & COMPLEX CO., LTDInventors: Dong Kwang Lee, Hee Sub Kim, Sam Young Kim
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Publication number: 20230390129Abstract: A foldable ramp according to an embodiment is configured to assist a movement of means of transportation which may be used by disabled people, such as a wheelchair. The foldable ramp may be used as a stand for a billboard, and the foldable ramp may be unfolded to be used as a ramp.Type: ApplicationFiled: September 15, 2022Publication date: December 7, 2023Inventors: Dong Kwang LEE, Hee Sub KIM, Sam Young KIM
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Patent number: 11821213Abstract: A block-type modular ramp is to be provided in a place where a step or bump is formed. The block-type modular ramp includes block bodies arranged in a horizontal direction and stacked vertically to form a backbone, a fastening member for fastening the block bodies arranged in the horizontal direction to each other, a fixing pin for fixing the block bodies stacked vertically to each other, a fixing member coupled to the block bodies and fixing the block bodies to a floor surface where to install the ramp, fastening grooves formed in the block bodies, and fixing holes formed in the block bodies in an up-down direction.Type: GrantFiled: November 23, 2021Date of Patent: November 21, 2023Assignee: HUMAN TECHNOLOGY & COMPLEX CO., LTDInventors: Hee Sub Kim, Sam Young Kim, Dong Kwang Lee
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Publication number: 20230304292Abstract: A block-type modular ramp is to be provided in a place where a step or bump is formed. The block-type modular ramp includes block bodies arranged in a horizontal direction and stacked vertically to form a backbone, a fastening member for fastening the block bodies arranged in the horizontal direction to each other, a fixing pin for fixing the block bodies stacked vertically to each other, a fixing member coupled to the block bodies and fixing the block bodies to a floor surface where to install the ramp, fastening grooves formed in the block bodies, and fixing holes formed in the block bodies in an up-down direction.Type: ApplicationFiled: November 23, 2021Publication date: September 28, 2023Inventors: Hee Sub KIM, Sam Young KIM, Dong Kwang LEE
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Patent number: 7781145Abstract: Disclosed herein are photoresist cleaning solutions useful for cleaning a semiconductor substrate in the last step of a developing step when photoresist patterns are formed. Also disclosed herein are methods for forming photoresist patterns using the solutions. The cleaning solutions of the present invention include H2O as a primary component, a surfactant as an additive, and optionally an alcohol compound. The cleaning solution of the present invention has lower surface tension than that of distilled water which has been used for conventional cleaning solutions, thereby improving resistance to pattern collapse and stabilizing the photoresist pattern formation.Type: GrantFiled: November 5, 2007Date of Patent: August 24, 2010Assignee: Hynix Semiconductor Inc.Inventors: Geun Su Lee, Sam Young Kim, Keun Do Ban
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Patent number: 7419760Abstract: Disclosed herein is a top anti-reflective coating composition comprising a bissulfone compound, as a photoacid generator, represented by Formula 1 below: wherein R1 and R2 are independently, a straight, branched or cyclic alkyl, aryl, alkenyl, oxoalkyl or oxoaryl group of 1 to 20 carbon atoms; or a halogen-substituted straight, branched or cyclic alkyl, aryl, alkenyl, oxoalkyl or oxoaryl group of 1 to 20 carbon atoms. Since the top anti-reflective coating composition dissolves a portion of a photoacid generator present at the top of an underlying photosensitizer, particularly, upon formation of a top anti-reflective coating, it can prevent the top from being formed into a thick section. Therefore, the use of the anti-reflective coating composition enables the formation of a vertical pattern of a semiconductor device.Type: GrantFiled: June 22, 2005Date of Patent: September 2, 2008Assignee: Hynix Semiconductor Inc.Inventors: Jae Chang Jung, Cheol Kyu Bok, Sam Young Kim, Chang Moon Lim, Seung Chan Moon
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Publication number: 20080138747Abstract: Disclosed herein are photoresist cleaning solutions useful for cleaning a semiconductor substrate in the last step of a developing step when photoresist patterns are formed. Also disclosed herein are methods for forming photoresist patterns using the solutions. The cleaning solutions of the present invention include H2O as a primary component, a surfactant as an additive, and optionally an alcohol compound. The cleaning solution of the present invention has lower surface tension than that of distilled water which has been used for conventional cleaning solutions, thereby improving resistance to pattern collapse and stabilizing the photoresist pattern formation.Type: ApplicationFiled: November 5, 2007Publication date: June 12, 2008Applicant: HYNIX SEMICONDUCTOR INC.Inventors: Geun Su Lee, Sam Young Kim, Keun Do Ban
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Patent number: 7364837Abstract: Photoresist cleaning solutions are used to clean semiconductor substrates before or after an exposing step when photoresist patterns are formed. The cleaning solutions include H2O and a nonionic surfactant compound represented by Formula 1. By spraying the disclosed cleaning solutions on a surface of the semiconductor substrate before or after exposing step to form a photoresist pattern, the desired pattern only is obtained and unnecessary patterns generated in undesired regions by ghost images are avoided as excess acid generated by the photoacid generator is neutralized and removed and damage to unexposed portions of the photoresist polymer is avoided. wherein R1 and R2 are independently H, C1-C20 alkyl, C5-C25 alkyl aryl or C1-C10 ester; m is 1 or 2; n is an integer ranging from 10 to 300; and o is 0 or 1.Type: GrantFiled: August 7, 2007Date of Patent: April 29, 2008Assignee: Hynix Semiconductor Inc.Inventors: Won Wook Lee, Geun Su Lee, Sam Young Kim
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Patent number: 7314853Abstract: Disclosed herein are photoresist cleaning solutions useful for cleaning a semiconductor substrate in the last step of a developing step when photoresist patterns are formed. Also disclosed herein are methods for forming photoresist patterns using the solutions. The cleaning solutions of the present invention include H2O as a primary component, a surfactant as an additive, and optionally an alcohol compound. The cleaning solution of the present invention has lower surface tension than that of distilled water which has been used for conventional cleaning solutions, thereby improving resistance to pattern collapse and stabilizing the photoresist pattern formation.Type: GrantFiled: June 24, 2004Date of Patent: January 1, 2008Assignee: Hynix Semiconductor Inc.Inventors: Geun Su Lee, Sam Young Kim, Keun Do Ban
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Patent number: 7288364Abstract: Disclosed herein is a top anti-reflective coating composition which comprises a photoacid generator represented by Formula 1 below. wherein n is between 7 and 25. Since the top anti-reflective coating composition dissolves a portion of a photoacid generator present at the top of an underlying photosensitizer, particularly, upon formation of a top anti-reflective coating, it can prevent the top from being formed into a thick section. Therefore, the use of the anti-reflective coating composition enables the formation of a vertical pattern on a semiconductor device.Type: GrantFiled: July 8, 2005Date of Patent: October 30, 2007Assignee: Hynix Semiconductor Inc.Inventors: Jae Chang Jung, Cheol Kyu Bok, Sam Young Kim, Chang Moon Lim, Seung Chan Moon
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Patent number: 7132217Abstract: Disclosed are an organic anti-reflective coating composition which is introduced to top portion of a photoresist and a pattern forming method using the same, in a process for forming ultra-fine patterns of photoresist for photolithography by using 193 nm ArF or 157 nm VUV light source, and more particularly to, an organic anti-reflective coating composition which can protect photoresist from atmospheric amine to minimize a post exposure delay effect, and minimize pattern distortion caused by diffused reflection, i.e., a swing phenomenon, with the improvement of a notching phenomenon and the reduction of reflection rate, and a patterning forming method using the same.Type: GrantFiled: July 15, 2004Date of Patent: November 7, 2006Assignee: Hynix Semiconductor Inc.Inventors: Geun Su Lee, Sam Young Kim
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Patent number: 6842028Abstract: In the present invention, an apparatus of testing a leakage protection reliability of an integrated circuit interconnection. The apparatus has at least one comb-like pattern, a serpentine-like pattern and means of applying a bias to the patterns and forms a maximum field region at an interconnection formed around a via, i.e., at the end of a tooth portion composing the comb-like pattern. In one structure of the present invention, the comb-like pattern is formed at one level, and the serpentine-like pattern has a plurality of unit parts corresponding to the tooth portions, respectively, and connection parts connecting the neighboring two unit parts. Each of the unit parts is formed at the same level with the comb-like pattern and spaced apart from the tooth portion by a minimum design length according to a design rule.Type: GrantFiled: January 27, 2004Date of Patent: January 11, 2005Assignee: Samsung Electronics Co., Ltd.Inventors: Won-Sang Song, Jung-Woo Kim, Chang-Sub Lee, Sam-Young Kim, Young-Jin Wee, Ki-Chul Park
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Publication number: 20040189338Abstract: In the present invention, an apparatus of testing a leakage protection reliability of an integrated circuit interconnection. The apparatus has at least one comb-like pattern, a serpentine-like pattern and means of applying a bias to the patterns and forms a maximum field region at an interconnection formed around a via, i.e., at the end of a tooth portion composing the comb-like pattern. In one structure of the present invention, the comb-like pattern is formed at one level, and the serpentine-like pattern has a plurality of unit parts corresponding to the tooth portions, respectively, and connection parts connecting the neighboring two unit parts. Each of the unit parts is formed at the same level with the comb-like pattern and spaced apart from the tooth portion by a minimum design length according to a design rule.Type: ApplicationFiled: January 27, 2004Publication date: September 30, 2004Applicant: Samsung Electronics Co., Ltd.Inventors: Won-Sang Song, Jung-Woo Kim, Chang-Sub Lee, Sam-Young Kim, Young-Jin Wee, Ki-Chul Park
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Publication number: 20040106071Abstract: Photoresist overcoating compositions are disclosed. More specifically, a photoresist overcoating composition comprising a compound represented by Formula 1 is disclosed that can reduce critical dimension difference between the center and the edge of a wafer in a patterning process.Type: ApplicationFiled: June 24, 2003Publication date: June 3, 2004Inventors: Young Sun Hwang, Sam Young Kim, Jae Chang Jung
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Patent number: 6693446Abstract: In the present invention, an apparatus of testing leakage current protection reliability of an integrated circuit interconnection. The apparatus has at least one comb-like pattern composed of a length portion, multiple tooth portions which are connected orthogonally to the length portion, and vias which are formed vertically from the ends of the tooth portions, respectively, through an interlayer dielectric layer. Additionally the apparatus has a serpentine-like pattern including a length parallel part or a connection part which is running parallel to the length portion, a tooth parallel part which is parallel to the tooth portion and formed at a level different from the level of the connection part or the length parallel part, and vias connecting them. The via of the comb-like pattern is located at the central position between the neighboring two vias of the serpentine-like pattern.Type: GrantFiled: April 1, 2002Date of Patent: February 17, 2004Assignee: Samsung Electronics Co., Ltd.Inventors: Won-Sang Song, Jung-Woo Kim, Chang-Sub Lee, Sam-Young Kim, Young-Jin Wee, Ki-Chul Park
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Patent number: 6690187Abstract: In the present invention, an apparatus of testing a leakage protection reliability of an integrated circuit interconnection. The apparatus has at least one comb-like pattern, a serpentine-like pattern and means of applying a bias to the patterns and forms a maximum field region at an interconnection formed around a via, i.e., at the end of a tooth portion composing the comb-like pattern. In one structure of the present invention, the comb-like pattern is formed at one level, and the serpentine-like pattern has a plurality of unit parts corresponding to the tooth portions, respectively, and connection parts connecting the neighboring two unit parts. Each of the unit parts is formed at the same level with the comb-like pattern and spaced apart from the tooth portion by a minimum design length according to a design rule.Type: GrantFiled: April 1, 2002Date of Patent: February 10, 2004Assignee: Samsung Electronics Co., Ltd.Inventors: Won-Sang Song, Jung-Woo Kim, Chang-Sub Lee, Sam-Young Kim, Young-Jin Wee, Ki-Chul Park
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Publication number: 20030020497Abstract: In the present invention, an apparatus of testing leakage current protection reliability of an integrated circuit interconnection. The apparatus has at least one comb-like pattern composed of a length portion, multiple tooth portions which are connected orthogonally to the length portion, and vias which are formed vertically from the ends of the tooth portions, respectively, through an interlayer dielectric layer. Additionally the apparatus has a serpentine-like pattern including a length parallel part or a connection part which is running parallel to the length portion, a tooth parallel part which is parallel to the tooth portion and formed at a level different from the level of the connection part or the length parallel part, and vias connecting them. The via of the comb-like pattern is located at the central position between the neighboring two vias of the serpentine-like pattern.Type: ApplicationFiled: April 1, 2002Publication date: January 30, 2003Applicant: Samsung Electronics Co., Ltd.Inventors: Won-Sang Song, Jung-Woo Kim, Chang-Sub Lee, Sam-Young Kim, Young-Jin Wee, Ki-Chul Park
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Publication number: 20030020507Abstract: In the present invention, an apparatus of testing a leakage protection reliability of an integrated circuit interconnection. The apparatus has at least one comb-like pattern, a serpentine-like pattern and means of applying a bias to the patterns and forms a maximum field region at an interconnection formed around a via, i.e., at the end of a tooth portion composing the comb-like pattern. In one structure of the present invention, the comb-like pattern is formed at one level, and the serpentine-like pattern has a plurality of unit parts corresponding to the tooth portions, respectively, and connection parts connecting the neighboring two unit parts. Each of the unit parts is formed at the same level with the comb-like pattern and spaced apart from the tooth portion by a minimum design length according to a design rule.Type: ApplicationFiled: April 1, 2002Publication date: January 30, 2003Applicant: Samsung Electronics Co., Ltd.Inventors: Won-Sang Song, Jung-Woo Kim, Chang-Sub Lee, Sam-Young Kim, Young-Jin Wee, Ki-Chul Park