Abstract: The present disclosure relates to thin-form-factor semiconductor device packages, and methods and systems for forming the same. Embodiments of the disclosure include methods and apparatus for forming semiconductor device packages that include frames that are coated with a layer of a coupling agent on which subsequently layers are formed. The utilization of the coupling agent between the frame and subsequently formed layers enhances the thermo-mechanical reliability of the package frames by mitigating the stress induced by any subsequently formed insulation layers and/or RDLs, and by providing improved coupling between such layers and the relatively smooth surfaces of the frames.

Abstract: Methods and apparatus of bioreactors for therapeutic cells manufacturing are provided herein. In some embodiments, a bioreactor includes: an upper bioreactor reservoir configured to perform multiple cell therapy manufacturing process steps including genetic modification and expansion to a plurality of cells disposed therein, wherein the upper bioreactor reservoir includes a plurality of ports for delivering fluids into and out of the upper bioreactor reservoir; a lower bioreactor compartment configured to hold a suspension comprising a molecular species; and a membrane disposed between the lower bioreactor compartment and the upper bioreactor reservoir, wherein the membrane includes a plurality of micro-straws extending through the membrane and into the upper bioreactor reservoir to transfect the plurality of cells with the molecular species.

Abstract: A gas distribution hub for a plasma chamber. The hub has a nozzle including a plurality of inner gas injection passage and a plurality of outer gas injection passages. The first plurality of gas injection passages are angularly spaced-apart arcuate channels at a first radial distance from a center of the hub, and the second plurality of gas injection passages are angularly spaced apart arcuate channels at a different second radial distance from the center of the hub.

Abstract: The present disclosure relates to semiconductor core assemblies and methods of forming the same. The semiconductor core assemblies described herein may be utilized to form semiconductor package assemblies, printed circuit board (PCB) assemblies, PCB spacer assemblies, chip carrier assemblies, intermediate carrier assemblies (e.g., for graphics cards), and the like. In one embodiment, a substrate core (e.g., a core structure) is implanted with dopants to achieve a desired bulk resistivity or conductivity. One or more conductive interconnections are formed in the substrate core and one or more redistribution layers are formed on surfaces thereof. The substrate core may thereafter be utilized as a core structure for a semiconductor package, PCB, PCB spacer, chip carrier, intermediate carrier, or the like.

Abstract: The present disclosure relates to methods and apparatus for forming a thin-form-factor semiconductor device package. In certain embodiments, a glass or silicon substrate is patterned by laser ablation to form structures for subsequent formation of interconnections therethrough. The substrate is thereafter utilized as a frame for forming a semiconductor device package, which may have one or more embedded dies therein. In certain embodiments, an insulating layer is formed over the substrate by laminating a pre-structured insulating film thereon. The insulating film may be pre-structured by laser ablation to form structures therein, followed by selective curing of sidewalls of the formed structures.

Abstract: Methods and apparatus of bioreactors for therapeutic cells manufacturing are provided herein. In some embodiments, a bioreactor includes: an upper bioreactor reservoir configured to perform multiple cell therapy manufacturing process steps including genetic modification and expansion to a plurality of cells disposed therein, wherein the upper bioreactor reservoir includes a plurality of ports for delivering fluids into and out of the upper bioreactor reservoir; a lower bioreactor compartment configured to hold a suspension comprising a molecular species; and a membrane disposed between the lower bioreactor compartment and the upper bioreactor reservoir, wherein the membrane includes a plurality of micro-straws extending through the membrane and into the upper bioreactor reservoir to transfect the plurality of cells with the molecular species.

Abstract: A gas distribution hub for a plasma chamber. The hub has a nozzle including a plurality of inner gas injection passage and a plurality of outer gas injection passages.

Abstract: Methods and apparatus form antimicrobial films for sanitization of high touch surfaces. In some embodiments, an antimicrobial film includes a polymer layer with a first top surface and a bottom surface, at least one microstructure on the first top surface of the polymer layer with the microstructure having a second top surface, at least one nanostructure on the second top surface of the at least one microstructure with at least one nanostructure having an exposed surface, and an antimicrobial coating formed on the first top surface of the polymer layer, the second top surface of the at least one microstructure, and the exposed surface of the at least nanostructure. An adhesive layer is formed on the bottom surface to the polymer layer to allow the antimicrobial film to be applied to the high touch surfaces.

Abstract: Embodiments of methods and apparatus for T-cell activation, T-cell transfection, and T-cell expansion are provided herein. For example, the apparatus includes a pump connected to a circulation path and configured to circulate cells suspended in a fluid to and from a container connected to the circulation path, the circulation path comprising a 3D printed blood vessel bed comprising in order of cell flow an artery-scaled vessel, an arteriole-scaled vessel, a capillary-scaled vessel, a venule-scaled vessel, and a vein-scaled vessel.

Abstract: Embodiments of automated closed apparatus for cell therapy manufacturing are provided herein. In some embodiments, an automated closed apparatus for cell therapy manufacturing includes: a master device having a master controller for processing control programs for a variety of cell types; an input device fluidly coupled to the master device, wherein the input device is configured to feed an initial plurality of cells to the master device; one or more auxiliary devices each configured to perform one or more cell therapy manufacturing steps to the initial plurality of cells to form a final plurality of cells; and an output device coupled to the master device configured to collect the final plurality of cells from the master device.

Abstract: Embodiments of apparatus and methods for counting cells in a liquid sample are provided herein. In some embodiments, an apparatus for counting cells in a liquid sample includes: a flow-splitting chamber fluidly coupled to a collection chamber; an input tube configured to deliver a liquid sample to the flow-splitting chamber; a spaced apart array of posts along a flow path configured to redirect the liquid sample into a plurality of streams; a plurality of sensing zones corresponding to the plurality of streams; and a plurality of sensing electrodes, wherein each sensing electrode is disposed in a corresponding sensing zone of the plurality of sensing zones and configured to detect a change in electrical impedance as the liquid sample flows through the plurality of sensing zones.

Abstract: Methods and apparatus for producing a treatment dose of engineered cells for individual patients at the point-of-care location. In some embodiments, a patient treatment system includes a mobile cell and gene processing station that provides individualized patient treatments at point-of-care locations. The cell and gene processing station may include a patient chamber configured to isolate a patient from an external environment, a first environment controller to adjust environmental parameters of the patient chamber, a processing chamber configured to isolate processing of patient cells from the external environment, a second environment controller to adjust environmental parameters of the processing chamber, a first apparatus configured to receive at least one blood sample from the patient, a second apparatus configured to process the blood sample, and a third apparatus configured to perform cell and gene engineering on the blood sample to create a treatment dose for the patient.

Abstract: An annular lid plate of a plasma reactor has upper and lower layers of gas distribution channels distributing gas along equal length paths from gas supply lines to respective gas distribution passages of a ceiling gas nozzle.

Abstract: A gas injection system includes (a) a side gas plenum, (b) a plurality of N gas inlets coupled to said side gas plenum, (c) plural side gas outlets extending radially inwardly from said plenum, (d) an N-way gas flow ratio controller having N outputs coupled to said N gas inlets respectively, and (e) an M-way gas flow ratio controller having M outputs, respective ones of said M outputs coupled to said tunable gas nozzle and a gas input of said N-way gas flow ratio controller.

Abstract: A plurality of energy filter values are obtained using a model that simulates potential distribution within a 3D feature when an electron beam of an SEM impinges on a selected area that includes the 3D feature. A correspondence is extracted between the plurality of energy filter values and respective depths of the 3D feature along a longitudinal direction by analyzing the simulated potential distribution. A plurality of SEM images of the 3D feature corresponding to the plurality of energy filter values are obtained. The plurality of SEM images are associated with their respective depths based on the extracted correspondence between the plurality of energy filter values and the respective depths. A composite 3D profile of the 3D feature is generated from the plurality of SEM images obtained from various depths of the 3D feature.

Abstract: A system for processing a substrate is provided. The system includes a process chamber including one or more sidewalls enclosing a processing region; and a substrate support. The system further includes a passageway connected to the process chamber; and a first particle detector disposed at a first location along the passageway. The first particle detector includes an energy source configured to emit a first beam; one or more optical devices configured to direct the first beam along one or more paths, where the one or more paths extend through at least a portion of the passageway. The first particle detector further includes a first energy detector disposed at a location other than on the one or more paths. The system further includes a controller configured to communicate with the first particle detector, wherein the controller is configured to identify a fault based on signals received from the first particle detector.

Abstract: Systems and methods for controlling device performance variability during manufacturing of a device on wafers are disclosed. The system includes a process platform, on-board metrology (OBM) tools, and a first server that stores a machine-learning based process control model. The first server combines virtual metrology (VM) data and OBM data to predict a spatial distribution of one or more dimensions of interest on a wafer. The system further comprises an in-line metrology tool, such as SEM, to measure the one or more dimensions of interest on a subset of wafers sampled from each lot. A second server having a machine-learning engine receives from the first server the predicted spatial distribution of the one or more dimensions of interest based on VM and OBM, and also receives SEM metrology data, and updates the process control model periodically (e.g., wafer-to-wafer, lot-to-lot, chamber-to-chamber etc.) using machine learning techniques.

Abstract: A semiconductor device is scanned by an electron beam of a scanning electron microscope (SEM). The area includes a three-dimensional (3D) feature having a top opening and a sidewall. The 3D feature is imaged while varying an energy value of the electron beam. The electron beam impinges at a first point within a selected area of the semiconductor device and interacts with the sidewall, wherein the first point is at a distance away from an edge of the top opening. Based on change in a signal representing secondary electron yield at the edge as the energy value of the electron beam is varied during the SEM imaging, it is determined whether the sidewall is occluded from a line-of-sight of the electron beam. A slope of the sidewall may be determined by comparing measured signals with simulated waveforms corresponding to various slopes.

Abstract: Systems and methods for controlling device performance variability during manufacturing of a device on wafers are disclosed. The system includes a process platform, on-board metrology (OBM) tools, and a first server that stores a machine-learning based process control model. The first server combines virtual metrology (VM) data and OBM data to predict a spatial distribution of one or more dimensions of interest on a wafer. The system further comprises an in-line metrology tool, such as SEM, to measure the one or more dimensions of interest on a subset of wafers sampled from each lot. A second server having a machine-learning engine receives from the first server the predicted spatial distribution of the one or more dimensions of interest based on VM and OBM, and also receives SEM metrology data, and updates the process control model periodically (e.g., to account for chamber-to-chamber variability) using machine learning techniques.

Abstract: A semiconductor device is scanned by an electron beam of a scanning electron microscope (SEM). The area includes a three-dimensional (3D) feature having a top opening and a sidewall. The 3D feature is imaged while varying an energy value of the electron beam. The electron beam impinges at a first point within a selected area of the semiconductor device and interacts with the sidewall, wherein the first point is at a distance away from an edge of the top opening. Based on change in a signal representing secondary electron yield at the edge as the energy value of the electron beam is varied during the SEM imaging, it is determined whether the sidewall is occluded from a line-of-sight of the electron beam. A slope of the sidewall may be determined by comparing measured signals with simulated waveforms corresponding to various slopes.