Patents by Inventor Sami K. Hahto
Sami K. Hahto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8110820Abstract: A multipurpose ion implanter beam line configuration constructed for enabling implantation of common monatomic dopant ion species and cluster ions, the beam line configuration having a mass analyzer magnet defining a pole gap of substantial width between ferromagnetic poles of the magnet and a mass selection aperture, the analyzer magnet sized to accept art ion beam from a slot-form ion source extraction aperture of at least about 80 mm height and at least about 7 mm width, and to produce dispersion at the mass selection aperture in a plane corresponding to the width of the beam, the mass selection aperture capable of being set to a mass-selection width sized to select a beam of the cluster ions of the same dopant species but incrementally differing molecular weights, the mass selection aperture also capable of being set to a substantially narrower mass-selection width and the analyzer magnet having a resolution at the mass selection aperture sufficient to enable selection of a beam of monatomic dopant ions oType: GrantFiled: June 13, 2007Date of Patent: February 7, 2012Assignee: SemEquip, Inc.Inventors: Hilton F. Glavish, Dale C. Jacobson, Sami K. Hahto, Thomas N. Horsky
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Publication number: 20110089321Abstract: A multipurpose ion implanter beam line configuration comprising a mass analyzer magnet followed by a magnetic scanner and magnetic collimator combination that introduce bends to the beam path, the beam line constructed for enabling implantation of common monatomic dopant ion species cluster ions, the beam line configuration having a mass analyzer magnet defining a pole gap of substantial width between ferromagnetic poles of the magnet and a mass selection aperture, the analyzer magnet sized to accept an ion beam from a slot-form ion source extraction aperture of at least about 80 mm height and at least about 7 mm width, and to produce dispersion at the mass selection aperture in a plane corresponding to the width of the beam, the mass selection aperture capable of being set to a mass-selection width sized to select a beam of the cluster ions of the same dopant species but incrementally differing molecular weights, the mass selection aperture also capable of being set to a substantially narrower mass-selectionType: ApplicationFiled: November 17, 2010Publication date: April 21, 2011Applicant: Semequip, Inc.Inventors: Hilton F. Glavish, Thomas N. Horsky, Dale C. Jacobson, Sami K. Hahto, Masao Naito, Nobuo Nagai, Nariaki Hamamoto
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Patent number: 7928406Abstract: A new type of triode extraction system, a Cluster Ion Beam Extraction System, is disclosed for broad energy range cluster ion beam extraction applications while still being applicable to atomic and molecular ion species as well. The extraction aperture plate contours are set to minimize the beam cross over and at the same time shield the source from excess extraction electric fields thus allowing smaller values of the extraction gap. In addition, a novel focusing feature is integrated into these new optics which allows the beam to be either focused or de-focused in the non-dispersive plane by using a bipolar bias voltage of only a few kV over a broad range of beam energy. This is a superior solution to a stand-alone electrostatic lens solution, for example an einzel lens, which would require tens of kV of bias voltage in order to be able to focus an energetic beam.Type: GrantFiled: May 22, 2008Date of Patent: April 19, 2011Assignee: SemEquip, Inc.Inventors: Thomas N. Horsky, Sami K. Hahto
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Publication number: 20100320395Abstract: An ion source is disclosed for use in fabrication of semiconductors. The ion source includes an electron emitter that includes a cathode mounted external to the ionization chamber for use in fabrication of semiconductors. In accordance with an important aspect of the invention, the electron emitter is employed without a corresponding anode or electron optics. As such, the distance between the cathode and the ionization chamber can be shortened to enable the ion source to be operated in an arc discharge mode or generate a plasma. Alternatively, the ion source can be operated in a dual mode with a single electron emitter by selectively varying the distance between the cathode and the ionization chamber.Type: ApplicationFiled: May 10, 2010Publication date: December 23, 2010Applicant: SemEquip, Inc.Inventors: Sami K. Hahto, Richard Goldberg, Edward McIntyre, Thomas N. Horsky
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Patent number: 7851773Abstract: A multipurpose ion implanter beam line configuration comprising a mass analyzer magnet followed by a magnetic scanner and magnetic collimator combination that introduce bends to the beam path, the beam line constructed for enabling implantation of common monatomic dopant ion species cluster ions, the beam line configuration having a mass analyzer magnet defining a pole gap of substantial width between ferromagnetic poles of the magnet and a mass selection aperture, the analyzer magnet sized to accept an ion beam from a slot-form ion source extraction aperture of at least about 80 mm height and at least about 7 mm width, and to produce dispersion at the mass selection aperture in a plane corresponding to the width of the beam, the mass selection aperture capable of being set to a mass-selection width sized to select a beam of the cluster ions of the same dopant species but incrementally differing molecular weights, the mass selection aperture also capable of being set to a substantially narrower mass-selectionType: GrantFiled: June 13, 2007Date of Patent: December 14, 2010Assignee: Semiquip, Inc.Inventors: Hilton F. Glavish, Thomas N. Horsky, Dale C. Jacobson, Sami K. Hahto, Masao Naito, Nobuo Nagai, Nariaki Hamamoto
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Patent number: 7838850Abstract: An ion source is disclosed for use in fabrication of semiconductors. The ion source includes an electron emitter that includes a cathode mounted external to the ionization chamber for use in fabrication of semiconductors. In accordance with an important aspect of the invention, the electron emitter is employed without a corresponding anode or electron optics. As such, the distance between the cathode and the ionization chamber can be shortened to enable the ion source to be operated in an arc discharge mode or generate a plasma. Alternatively, the ion source can be operated in a dual mode with a single electron emitter by selectively varying the distance between the cathode and the ionization chamber.Type: GrantFiled: March 31, 2008Date of Patent: November 23, 2010Assignee: SemEquip, Inc.Inventors: Sami K. Hahto, Richard Goldberg, Edward McIntyre, Thomas N. Horsky
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Publication number: 20100066252Abstract: An ion source for the generation of hydrogen or deuterium ions is disclosed, said source suitable for the generation of D-D and D-T neutrons, wherein the body of the ion source is cylindrical, and disposed at one end of the ion source opposite the extraction plate, is a single, spiraled RF coil antenna, in which the spiraled coils are flat.Type: ApplicationFiled: April 17, 2009Publication date: March 18, 2010Applicant: The Regents of the University of CaliforniaInventors: Jani Petteri Reijonen, Sami K. Hahto
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Publication number: 20100025573Abstract: A fast nuclear particle generator is described, useful for highly penetrating particle beam inspection equipment, that is capable of generating pulses of 5 ns or less, which pulses may comprise neutrons of various energies, gammas of various energies, or a mixture of neutron and gammas of various energies. The nuclear particle generator includes means for decelerating an incident swept beam so that nuclear particles are generated only during that small time interval that a beam strikes a target. This eliminates spurious background nuclear particle generation, and decreases beam dump cooling requirements.Type: ApplicationFiled: December 14, 2007Publication date: February 4, 2010Applicant: The Regents of the University of CaliforniaInventors: Sami K. Hahto, Ka-Ngo Leung, Taneli Ville Matias Kalvas
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Publication number: 20090283695Abstract: A multi mode ion implantation system, which operates in both an arc discharge mode of operation and a non arc discharge mode of operation, is described. The multi mode ion implantation system may consist of dual ionization volumes forming two ion sources, an arc discharge source and a non arc discharge source, in tandem. The dual chambers and the two sources feed the ion implantation system with material of various species for multi mode, an arc discharge and a non arc discharge operation.Type: ApplicationFiled: May 13, 2009Publication date: November 19, 2009Inventors: Thomas N. Horsky, Richard Goldberg, Sami K. Hahto
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Publication number: 20090261248Abstract: A multipurpose ion implanter beam line configuration comprising a mass analyzer magnet followed by a magnetic scanner and magnetic collimator combination that introduce bends to the beam path, the beam line constructed for enabling implantation of common monatomic dopant ion species cluster ions, the beam line configuration having a mass analyzer magnet defining a pole gap of substantial width between ferromagnetic poles of the magnet and a mass selection aperture, the analyzer magnet sized to accept an ion beam from a slot-form ion source extraction aperture of at least about 80 mm height and at least about 7 mm width, and to produce dispersion at the mass selection aperture in a plane corresponding to the width of the beam, the mass selection aperture capable of being set to a mass-selection width sized to select a beam of the cluster ions of the same dopant species but incrementally differing molecular weights, the mass selection aperture also capable of being set to a substantially narrower mass-selectionType: ApplicationFiled: June 13, 2007Publication date: October 22, 2009Inventors: Hilton F. Glavish, Thomas N. Horsky, Dale C. Jacobson, Sami K. Hahto, Masao Naito, Nobuo Nagai, Nariaki Hamamoto
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Publication number: 20090206270Abstract: A multipurpose ion implanter beam line configuration constructed for enabling implantation of common monatomic dopant ion species and cluster ions, the beam line configuration having a mass analyzer magnet defining a pole gap of substantial width between ferromagnetic poles of the magnet and a mass selection aperture, the analyzer magnet sized to accept art ion beam from a slot-form ion source extraction aperture of at least about 80 mm height and at least about 7 mm width, and to produce dispersion at the mass selection aperture in a plane corresponding to the width of the beam, the mass selection aperture capable of being set to a mass-selection width sized to select a beam of the cluster ions of the same dopant species but incrementally differing molecular weights, the mass selection aperture also capable of being set to a substantially narrower mass-selection width and the analyzer magnet having a resolution at the mass selection aperture sufficient to enable selection of a beam of monatomic dopant ions oType: ApplicationFiled: June 13, 2007Publication date: August 20, 2009Applicant: SEMEQUIP, INC.Inventors: Hilton F. Glayish, Dale C. Jacobson, Sami K. Hahto, Thomas N. Horsky
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Publication number: 20090014667Abstract: An ion source is disclosed for use in fabrication of semiconductors. The ion source includes an electron emitter that includes a cathode mounted external to the ionization chamber for use in fabrication of semiconductors. In accordance with an important aspect of the invention, the electron emitter is employed without a corresponding anode or electron optics. As such, the distance between the cathode and the ionization chamber can be shortened to enable the ion source to be operated in an arc discharge mode or generate a plasma. Alternatively, the ion source can be operated in a dual mode with a single electron emitter by selectively varying the distance between the cathode and the ionization chamber.Type: ApplicationFiled: March 31, 2008Publication date: January 15, 2009Inventors: Sami K. Hahto, Richard Goldberg, Edward McIntyre, Thomas N. Horsky
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Publication number: 20080290266Abstract: A new type of triode extraction system, a Cluster Ion Beam Extraction System, is disclosed for broad energy range cluster ion beam extraction applications while still being applicable to atomic and molecular ion species as well. The extraction aperture plate contours are set to minimize the beam cross over and at the same time shield the source from excess extraction electric fields thus allowing smaller values of the extraction gap. In addition, a novel focusing feature is integrated into these new optics which allows the beam to be either focused or de-focused in the non-dispersive plane by using a bipolar bias voltage of only a few kV over a broad range of beam energy. This is a superior solution to a stand-alone electrostatic lens solution, for example an einzel lens, which would require tens of kV of bias voltage in order to be able to focus an energetic beam.Type: ApplicationFiled: May 22, 2008Publication date: November 27, 2008Inventors: Thomas N. Horsky, Sami K. Hahto
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Patent number: 7176469Abstract: A radio frequency (RF) driven plasma ion source has an external RF antenna, i.e. the RF antenna is positioned outside the plasma generating chamber rather than inside. The RF antenna is typically formed of a small diameter metal tube coated with an insulator. An external RF antenna assembly is used to mount the external RF antenna to the ion source. The RF antenna tubing is wound around the external RF antenna assembly to form a coil. The external RF antenna assembly is formed of a material, e.g. quartz, which is essentially transparent to the RF waves. The external RF antenna assembly is attached to and forms a part of the plasma source chamber so that the RF waves emitted by the RF antenna enter into the inside of the plasma chamber and ionize a gas contained therein. The plasma ion source is typically a multi-cusp ion source. A converter can be included in the ion source to produce negative ions.Type: GrantFiled: September 6, 2003Date of Patent: February 13, 2007Assignee: The Regents of the University of CaliforniaInventors: Ka-Ngo Leung, Sami K. Hahto, Sari T. Hahto
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Publication number: 20040104683Abstract: A radio frequency (RF) driven plasma ion source has an external RF antenna, i.e. the RF antenna is positioned outside the plasma generating chamber rather than inside. The RF antenna is typically formed of a small diameter metal tube coated with an insulator. A flange is used to mount the external RF antenna to the ion source. The RF antenna tubing is wound around the flange to form a coil. The flange is formed of a material, e.g. quartz, that is essentially transparent to the RF waves. The flange is attached to and forms a part of the plasma source chamber so that the RF waves emitted by the RF antenna enter into the inside of the plasma chamber and ionize a gas contained therein. The plasma ion source is typically a multi-cusp ion source. A converter can be included in the ion source to produce negative ions.Type: ApplicationFiled: September 6, 2003Publication date: June 3, 2004Inventors: Ka-Ngo Leung, Sami K. Hahto, Sari T. Hahto