Patents by Inventor Samuel C. Baber

Samuel C. Baber has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Metal planarization process
    Patent number: 4673592
    Abstract: The present invention discloses a method for planarizing contact holes, vias, and other surface depressions, during the fabrication of an integrated circuit structure. Differential thermal conductivities are exploited to selectively remove a deposited film of metal from high-thermal-resistance areas, such as silicon dioxide or other insulators, and not from low-thermal-resistance areas, such as silicon or metal. By repetition of this step, very deep depressions, having a high aspect ratio, are reliably filled.
    Type: Grant
    Filed: June 2, 1982
    Date of Patent: June 16, 1987
    Assignee: Texas Instruments Incorporated
    Inventors: Vernon R. Porter, Samuel C. Baber
  • Self-aligned low-temperature emitter drive-in
    Patent number: 4619036
    Abstract: After the extrinsic base region of a bipolar transistor has been formed, and the emitter contact has been patterned and cut, the emitter dopant is deposited or spun on, and the emitter dopant is then driven in using a short pulse of radiant energy. The necessity for high-temperature annealing of the emitter doping is thereby avoided, and the base doping profile is not disturbed by high-temperature annealing steps.
    Type: Grant
    Filed: September 28, 1984
    Date of Patent: October 28, 1986
    Assignee: Texas Instruments Incorporated
    Inventors: Robert H. Havemann, Samuel C. Baber
  • Selective deposition of composite materials
    Patent number: 4465716
    Abstract: A method for selectively depositing a composite material over high-thermal-conductivity areas (such as silicon) and not over low-thermal-conductivity areas (such as oxide), which does not require any additional patterning step. A composite material, such as TiW is deposited overall by sputtering. A short pulse of light is then applied, and the composite material over the oxide separates and flakes off, while the composite material over the high-thermal-conductivity area remains in place.
    Type: Grant
    Filed: June 2, 1982
    Date of Patent: August 14, 1984
    Assignee: Texas Instruments Incorporated
    Inventors: Samuel C. Baber, Vernon R. Porter
  • Laser assisted lift-off
    Patent number: 4448636
    Abstract: A method for selective removal of metallization in integrated circuits. A uniform metal film is applied over a patterned resist layer. A short pulse of radiant energy is then applied to the whole surface of the metal film. The resist underneath the metal film is locally heated enough to cause outgassing, which breaks the mechanical bond between the metal film and the resist. The metal film over the patterned resist layer is then removed, leaving the deposited metal film in place over areas which were not covered by the resist film.
    Type: Grant
    Filed: June 2, 1982
    Date of Patent: May 15, 1984
    Assignee: Texas Instruments Incorporated
    Inventor: Samuel C. Baber