Abstract: A linear processing system having an entry loadlock, a first multi-pass processing chamber coupled to the entry loadlock, the first multi-pass processing chamber having a sputtering magnetron arrangement and configured to house a single substrate carrier for performing a multi-pass processing; a single-pass chamber coupled to the first multi-pass processing chamber and having a plurality of magnetron arrangements arranged along a carrier travel direction, the single-pass chamber configured to house multiple carriers arranged serially in a row and configured for a single-pass processing; a second multi-pass processing chamber coupled to the single-pass processing chamber, the second multi-pass processing chamber having a sputtering magnetron arrangement and configured to house a single substrate carrier for performing a multi-pass processing; and an exit loadlock chamber coupled to the second multi-pass processing chamber.

Abstract: A system and method for fabricating protective coating for transparent panels, especially beneficial for transparent panels covering digital displays. The protective coating includes an adhesion layer formed on a surface of the transparent panel, a stress grading intermediate layer formed over the adhesion layer, a protective layer formed over the stress grading intermediate layer, and an anti-reflective layer formed over the protective layer. Also provided is a sputtering system for fabricating the protective coating.

Abstract: A protective coating for transparent panels, especially beneficial for transparent panels covering digital displays. The protective coating includes an adhesion layer formed on a surface of the transparent panel, a stress grading intermediate layer formed over the adhesion layer, a protective layer formed over the stress grading intermediate layer, and an antireflective layer formed over the protective layer. Also provided is a sputtering system for fabricating the protective coating.

Abstract: An apparatus has a keeper plate with a keeper plate outer perimeter. An annular magnet array with an annular magnet array outer perimeter is coincident with the keeper plater outer perimeter. An inner top magnet is positioned on a centerline of a first side of the keeper plate and an inner bottom magnet is positioned on the centerline of a second side of the keeper plate. The inner top magnet is of a first magnetic orientation and the annular magnet array and the inner bottom magnet have a second magnetic orientation opposite the first magnetic orientation to form a magnetic field environment that provides plasma confinement of ionizing electrons which causes a gas operative as a reactive gas and sputter gas to become ionized and subsequently be directed to a target cathode while simultaneously causing the ionization of sputtered species which are dispersed across a substrate.

Abstract: An apparatus has a cathode target with a cathode target outer perimeter. An inner magnet array with an inner magnet array inner perimeter is within the cathode target outer perimeter. The inner magnet array includes an inner magnet array base portion and an inner magnet array upper portion. A keeper plate assembly is connected to the inner magnet array upper portion and isolates the inner magnet array upper portion from the inner magnet array base portion. An outer magnet array is connected to a bottom surface of the keeper plate. The outer magnet array has an outer magnet array outer perimeter larger than the inner magnet array inner perimeter. The inner magnet array upper portion has a first magnetic orientation and the outer magnet array and the inner magnet array base portion have a second magnetic orientation opposite the first magnetic orientation.

Abstract: A method for forming thin film layer having micro-voids therein. The method proceeds by dispersing micro-particles over the surface of a substrate. The micro particles are made of sublimable material. Then the thin film layer is formed over the surface, so as to cover the particles. The thin film is then etched back so as to expose the particles at least partially. The material of the particles is then sublimed, e.g., by heating the substrate, thereby leaving micro-voids inside the thin film layer. The micro voids can be filled or remain exposed to generate textured surface.

Abstract: A method for forming a diamond-like carbon (DLC) coating on an article is provided, comprising: alternatingly performing a deposition process and an ashing process on the article a determined number of times, wherein during the deposition process the method proceeds by forming on the article a layer of DLC which includes graphitic sp2 carbon and tetrahedral sp3 carbon, and during the ashing process the method proceeds by selectively etching the graphitic sp2 carbon, wherein the determine number of time is configured to result in a designated overall thickness of the DLC coating.

Abstract: Disclosed is a substrate processing system which enables combined static and pass-by processing. Also, a system architecture is provided, which reduces footprint size. The system is constructed such that the substrates are processed therein vertically, and each chamber has a processing source attached to one sidewall thereof, wherein the other sidewall backs to a complementary processing chamber. The chamber system can be milled from a single block of metal, e.g., aluminum, wherein the block is milled from both sides, such that a wall remains and separates each two complementary processing chambers.

Abstract: An apparatus has a cathode target with a cathode target outer perimeter. An inner magnet array with an inner magnet array inner perimeter is within the cathode target outer perimeter. The inner magnet array includes an inner magnet array base portion and an inner magnet array upper portion. A keeper plate assembly is connected to the inner magnet array upper portion and isolates the inner magnet array upper portion from the inner magnet array base portion. An outer magnet array is connected to a bottom surface of the keeper plate. The outer magnet array has an outer magnet array outer perimeter larger than the inner magnet array inner perimeter. The inner magnet array upper portion has a first magnetic orientation and the outer magnet array and the inner magnet array base portion have a second magnetic orientation opposite the first magnetic orientation.

Abstract: A magnet pack has a permeable assembly with a first cutout for a center magnet and second cutouts for peripheral magnets surrounding the center magnet. A target is attached to the permeable assembly. A heatsink is attached to the target. Emanating magnetic fields from the magnet pack progress from an inner atmospheric side to a position substantially within a vacuum cavity. The emanating magnetic fields from the center magnet are substantially stronger than the emanating magnetic fields from the peripheral magnets.

Abstract: Disclosed is a substrate processing system which enables combined static and pass-by processing. Also, a system architecture is provided, which reduces footprint size. The system is constructed such that the substrates are processed therein vertically, and each chamber has a processing source attached to one sidewall thereof, wherein the other sidewall backs to a complementary processing chamber. The chamber system can be milled from a single block of metal, e.g., aluminum, wherein the block is milled from both sides, such that a wall remains and separates each two complementary processing chambers.

Abstract: Disclosed is a substrate processing system which enables combined static and pass-by processing. Also, a system architecture is provided, which reduces footprint size. The system is constructed such that the substrates are processed therein vertically, and each chamber has a processing source attached to one sidewall thereof, wherein the other sidewall backs to a complementary processing chamber. The chamber system can be milled from a single block of metal, e.g., aluminum, wherein the block is milled from both sides, such that a wall remains and separates each two complementary processing chambers.

Abstract: An apparatus has a primary cathode configured for free space interaction with a substrate operative as an anode. A first annular cathode faces a second annular cathode. The primary cathode, the first annular cathode, the second annular cathode are axially aligned. The outer diameters of the first annular cathode and the second annular cathode correspond to the outer diameter of the primary cathode. The primary cathode provisions deposited material on the substrate with controllable plasma density to levels above 1×1018 m?3, with ignition capability above 0.05 Pa.

Abstract: A physical vapor deposition (PVD) chamber for depositing a transparent and clear hydrogenated carbon, e.g., hydrogenated diamond-like carbon, film. A chamber body is configured for maintaining vacuum condition therein, the chamber body having an aperture on its sidewall. A plasma cage having an orifice is attached to the sidewall, such that the orifice overlaps the aperture. Two sputtering targets are situated on cathodes inside the plasma cage and are oriented opposite each other and configured to sustain plasma there-between and confined inside the plasma cage. The plasma inside the cage sputters material from the targets, which then passes through the orifice and aperture and lands on the substrate. The substrate is moved continuously in a pass-by fashion during the process.

Abstract: An apparatus has a cathode target with a cathode target outer perimeter. An inner magnetic array with an inner magnetic array inner perimeter is at the cathode target outer perimeter. An outer magnetic array has an outer magnetic array outer perimeter larger than the inner magnetic array inner perimeter. The inner magnetic array and the outer magnetic array are concentric and each have a single, common, parallel magnetic orientation to form a magnetic field environment that defines a plasma confinement zone adjacent the target cathode and the plasma confinement zone causes a gas operative as a reactive gas and sputter gas to become ionized and thus be directed to the target cathode and cause a second set of ions including species from the target to disperse across a substrate.

Abstract: A physical vapor deposition (PVD) chamber for depositing a transparent and clear hydrogenated carbon, e.g., hydrogenated diamond-like carbon, film. A chamber body is configured for maintaining vacuum condition therein, the chamber body having an aperture on its sidewall. A plasma cage having an orifice is attached to the sidewall, such that the orifice overlaps the aperture. Two sputtering targets are situated on cathodes inside the plasma cage and are oriented opposite each other and configured to sustain plasma there-between and confined inside the plasma cage. The plasma inside the cage sputters material from the targets, which then passes through the orifice and aperture and lands on the substrate. The substrate is moved continuously in a pass-by fashion during the process.

Abstract: A physical vapor deposition (PVD) chamber for depositing a transparent and clear hydrogenated carbon, e.g., hydrogenated diamond-like carbon, film. A chamber body is configured for maintaining vacuum condition therein, the chamber body having an aperture on its sidewall. A plasma cage having an orifice is attached to the sidewall, such that the orifice overlaps the aperture. Two sputtering targets are situated on cathodes inside the plasma cage and are oriented opposite each other and configured to sustain plasma there-between and confined inside the plasma cage. The plasma inside the cage sputters material from the targets, which then passes through the orifice and aperture and lands on the substrate. The substrate is moved continuously in a pass-by fashion during the process.

Abstract: A quantum dot (QD) sensitized wide bandgap (WBG) semiconductor heterojunction photovoltaic (PV) device comprises an electron conductive layer; an active photovoltaic (PV) layer adjacent the electron conductive layer; a hole conductive layer adjacent the active PV layer; and an electrode layer adjacent the hole conductive layer. The active PV layer comprises a wide bandgap (WBG) semiconductor material with Eg?2.0 eV, in the form of a 2-dimensional matrix defining at least two open spaces, and a narrower bandgap semiconductor material with Eg<2.0 eV, in the form of quantum dots (QD's) filling each open space defined by the matrix of WBG semiconductor material and establishing a heterojunction therewith. The active PV layer is preferably fabricated by a co-sputter deposition process, and the QD's constitute from about 40 to about 90 vol. % of the active PV layer.

Abstract: Provided herein is an apparatus, including a plurality of spaced apart perpendicular magnetic elements. Each of the magnetic elements includes a respective discrete magnetic domain and each of the magnetic elements includes a magnetic recording layer comprising a Co1-x-yPtxCry alloy material, where 0.05?x?0.35 and 0?y?0.15.

Abstract: A deposition system is provided, where conductive targets of similar composition are situated opposing each other. The system is aligned parallel with a substrate, which is located outside the resulting plasma that is largely confined between the two cathodes. A “plasma cage” is formed wherein the carbon atoms collide with accelerating electrons and get highly ionized. The electrons are trapped inside the plasma cage, while the ionized carbon atoms are deposited on the surface of the substrate. Since the electrons are confined to the plasma cage, no substrate damage or heating occurs. Additionally, argon atoms, which are used to ignite and sustain the plasma and to sputter carbon atoms from the target, do not reach the substrate, so as to avoid damaging the substrate.