Patents by Inventor Samuel J. Kim

Samuel J. Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • AlGaN/GaN hybrid MOS-HFET
    Patent number: 8653559
    Abstract: A field effect transistor (FET) includes source and drain electrodes, a channel layer, a barrier layer over the channel layer, a passivation layer covering the barrier layer for passivating the barrier layer, a gate electrode extending through the barrier layer and the passivation layer, and a gate dielectric surrounding a portion of the gate electrode that extends through the barrier layer and the passivation layer, wherein the passivation layer is a first material and the gate dielectric is a second material, and the first material is different than the second material.
    Type: Grant
    Filed: June 29, 2011
    Date of Patent: February 18, 2014
    Assignee: HRL Laboratories, LLC
    Inventors: Andrea Corrion, Karim S. Boutros, Mary Y. Chen, Samuel J. Kim, Rongming Chu, Shawn D. Burnham
  • ALGaN/GaN HYBRID MOS-HFET
    Publication number: 20130001646
    Abstract: A field effect transistor (FET) includes source and drain electrodes, a channel layer, a barrier layer over the channel layer, a passivation layer covering the barrier layer for passivating the barrier layer, a gate electrode extending through the barrier layer and the passivation layer, and a gate dielectric surrounding a portion of the gate electrode that extends through the barrier layer and the passivation layer, wherein the passivation layer is a first material and the gate dielectric is a second material, and the first material is different than the second material.
    Type: Application
    Filed: June 29, 2011
    Publication date: January 3, 2013
    Applicant: HRL LABORATORIES, LLC
    Inventors: Andrea Corrion, Karim S. Boutros, Mary Y. Chen, Samuel J. Kim, Rongming Chu, Shawn D. Burnham