Patents by Inventor Samuel Ponczak

Samuel Ponczak has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of forming a curved implanted region in a semiconductor body
    Patent number: 4113516
    Abstract: A method is disclosed whereby a region having a varying conductivity profile and depth is formed in a body of semiconductor material. The method includes the step of implanting conductivity modifiers beneath a curved surface of the body. Such a region, fabricated by the present method, is particularly useful as one element of a semi-conductor device.
    Type: Grant
    Filed: January 28, 1977
    Date of Patent: September 12, 1978
    Assignee: RCA Corporation
    Inventors: Samuel Ponczak, John Aaron Olmstead
  • Method of selective aluminum diffusion
    Patent number: 4050967
    Abstract: A silicon substrate is coated with a mask comprised of the combination of a silicon dioxide layer and a layer of undoped polycrystalline silicon. Aluminum is then diffused through windows formed in the mask. The mask has proven effective for relatively deep aluminum diffusion.
    Type: Grant
    Filed: December 9, 1976
    Date of Patent: September 27, 1977
    Assignee: RCA Corporation
    Inventors: Wojciech Rosnowski, Samuel Ponczak