Abstract: Methods for treating a thin film made from a conductive or semiconductive material may improve the crystalline quality thereof. Such methods may include: supplying a substrate including, on one of the faces thereof, a thin film of the material; and biased plasma treating the assembly formed by the substrate and the thin film at a given temperature and for a given time, so as to obtain a crystalline reorganization over a depth of the thin film, the biased plasma treatment including an electrical biasing of the thin film and an exposure of the film thus biased to a hydrogen plasma, the biased plasma treatment being implemented at a temperature that is below the melting points of the thin film and of the substrate.

Abstract: Methods for treating a thin film made from a conductive or semiconductive material may improve the crystalline quality thereof. Such methods may include: supplying a substrate including, on one of the faces thereof, a thin film of the material; and biased plasma treating the assembly formed by the substrate and the thin film at a given temperature and for a given time, so as to obtain a crystalline reorganization over a depth of the thin film, the biased plasma treatment including an electrical biasing of the thin film and an exposure of the film thus biased to a hydrogen plasma, the biased plasma treatment being implemented at a temperature that is below the melting points of the thin film and of the substrate.

Abstract: An x-ray generator tube comprises a vacuum chamber with a cathode and an anode, the cathode and anode placed in the vacuum chamber, the cathode emits an electron beam in the direction of the anode, the anode includes a target emitting x-rays when it is struck by the electron beam, and the x-rays propagate out of the vacuum chamber by passing through the wall of the chamber via a diamond-based transmission window. According to the invention, a diamond-based x-ray sensor is integrated into the diamond-based transmission window.

Abstract: An x-ray generator tube comprises a vacuum chamber with a cathode and an anode, the cathode and anode placed in the vacuum chamber, the cathode emits an electron beam in the direction of the anode, the anode includes a target emitting x-rays when it is struck by the electron beam, and the x-rays propagate out of the vacuum chamber by passing through the wall of the chamber via a diamond-based transmission window. According to the invention, a diamond-based x-ray sensor is integrated into the diamond-based transmission window.

Abstract: A process for producing moulded elements made of diamond of nanometric, submicrometric or micrometric sizes, the process comprising the following steps: a) forming beads of nanometric, submicrometric or micrometric sizes, each bead comprising a diamond nanoparticle embedded in an embedding material, by contacting diamond particles of nanometric sizes with an embedding material; b) introducing a bead into cavities of a sacrificial mould, the cavities forming a replica of the elements to be produced; c) removing the embedding material; d) forming diamond elements in the cavities containing a nanoparticle, by growing diamond from nanoparticles; e) releasing the diamond elements, by partially or totally removing the sacrificial mould.

Abstract: A semiconductor substrate including at least a layer based on doped diamond with a thickness greater than or equal to approximately 10 ?m, a layer based on at least one semiconductor or a stack of layers including the semiconductor-based layer, and a layer based on intrinsic diamond disposed against the layer based on doped diamond, between the layer based on doped diamond and the semiconductor-based layer.