Abstract: A metal contact in a semiconductor device is formed by forming an insulating layer having a contact hole therein on a silicon layer. A cobalt layer is formed on a bottom and inner walls of the contact hole. A cobalt silicide layer is formed at the bottom of the contact hole while forming a titanium layer on the cobalt layer. A plug is formed on the titanium layer so as to fill the contact hole.

Abstract: A metal contact in a semiconductor device is formed by forming an insulating layer having a contact hole therein on a silicon substrate. A cobalt layer is formed on a bottom and inner walls of the contact hole. A cobalt silicide layer is formed at the bottom of the contact hole while forming a titanium layer on the cobalt layer. A plug is formed on the titanium layer so as to fill the contact hole.

Abstract: A metal contact in a semiconductor device is formed by forming an insulating layer having a contact hole therein on a silicon substrate. A cobalt layer is formed on a bottom and inner walls of the contact hole. A cobalt silicide layer is formed at the bottom of the contact hole while forming a titanium layer on the cobalt layer. A plug is formed on the titanium layer so as to fill the contact hole.

Abstract: A metal layer is formed on an integrated circuit device including forming an insulating layer on an integrated circuit substrate. A contact hole is formed by selectively etching the insulating layer to thereby partially expose the substrate. A metal layer including tantalum nitride is formed on the insulating layer including the contact hole using a tantalum precursor including a tantalum element and at least one bonding element that is chemically bonded to the tantalum element. A part of the at least one bonding element include at least one ligand bonding element that is ligand-bonded to the tantalum element. Forming the metal layer may include removing at least some of the ligand bonded elements with a removing gas that is substantially free of hydrogen radicals. The metal layer may be formed using a chemical vapor deposition (CVD) or an atomic layer deposition (ALD) process. A copper or other metal layer may be deposited on the metal layer including tantalum nitride.

Abstract: Methods of forming a metal layer in integrated circuit devices using selective electroplating in a recess are disclosed. In particular, a recess is formed in a surface of an insulating layer. The recess has a side wall inside the recess, a bottom inside the recess, and an edge at a boundary of the surface of the insulating layer and the side wall. A selective electroplating mask is formed on the side wall to provide a covered portion of the side wall and an exposed portion of the side wall. The exposed portion of the side wall can be electroplated with a metal. Related conductive contacts are also disclosed.

Abstract: A metal contact in a semiconductor device is formed by forming an insulating layer having a contact hole therein on a silicon substrate. A cobalt layer is formed on a bottom and inner walls of the contact hole. A cobalt silicide layer is formed at the bottom of the contact hole while forming a titanium layer on the cobalt layer. A plug is formed on the titanium layer so as to fill the contact hole.

Abstract: Methods of forming a metal layer in integrated circuit devices using selective electroplating in a recess are disclosed. In particular, a recess is formed in a surface of an insulating layer. The recess has a side wall inside the recess, a bottom inside the recess, and an edge at a boundary of the surface of the insulating layer and the side wall. A selective electroplating mask is formed on the side wall to provide a covered portion of the side wall and an exposed portion of the side wall. The exposed portion of the side wall can be electroplated with a metal. Related conductive contacts are also disclosed.

Abstract: After a processing chamber is used to deposit a refractory metal film on a substrate, the chamber is plasma-treated with a gas including either nitrogen and/or hydrogen and in-situ cleaned. By plasma-treating the chamber with a gas including nitrogen, the refractory metal film that forms on interior surfaces of the chamber during substrate processing is nitrided. The nitrided refractory metal film can be removed from the chamber during the in-situ cleaning. By plasma-treating the chamber with a gas including hydrogen, reaction by-products generated in the chamber is diluted removed. The chamber may be plasma-treated in a gas ambient including both nitrogen and hydrogen. Also, the plasma treatment may be performed before and after the in-situ cleaning.

Abstract: Methods of forming metal layers include techniques to form metal layers using atomic layer deposition techniques that may be repeated in sequence to build up multiple atomic metal layers into a metal thin film. The methods include forming a metal layer by chemisorbing a metallic precursor comprising a metal element and at least one non-metal element that is ligand-bonded to the metal element, on a substrate. The metal element may include tantalum. The chemisorbed metallic precursor is then converted into the metal layer by removing the at least one non-metal element from the metallic precursor through ligand exchange. This removal of the non-metal element may be achieved by exposing the chemisorbed metallic precursor to an activated gas that is established by a remote plasma, which reduces substrate damage. The activated gas may be selected from the group consisting of H2, NH3, SiH4 and Si2H6 and combinations thereof. These steps may be performed at a temperature less than about 650° C.

Abstract: The present invention discloses a method of manufacturing a semiconductor device having an upper capacitor electrode and a node resistor, including depositing a thin film at a first deposition rate on an edge portion of a wafer and at a second deposition rate on a central portion of the wafer to form the upper capacitor electrode and the node resistor, thereby improving step coverage of the upper capacitor electrode while simultaneously improving resistance distribution of the node resistor.

Abstract: Methods of forming a metal layer in integrated circuit devices using selective electroplating in a recess are disclosed. In particular, a recess is formed in a surface of an insulating layer. The recess has a side wall inside the recess, a bottom inside the recess, and an edge at a boundary of the surface of the insulating layer and the side wall. A selective electroplating mask is formed on the side wall to provide a covered portion of the side wall and an exposed portion of the side wall. The exposed portion of the side wall can be electroplated with a metal. Related conductive contacts are also disclosed.

Abstract: A metal contact in a semiconductor device is formed by forming an insulating layer having a contact hole therein on a silicon substrate. A cobalt layer is formed on a bottom and inner walls of the contact hole. A cobalt silicide layer is formed at the bottom of the contact hole while forming a titanium layer on the cobalt layer. A plug is formed on the titanium layer so as to fill the contact hole.

Abstract: A contact structure is formed by forming an interlayer dielectric on a substrate having a semiconductive region. A contact hole is formed in the interlayer dielectric to expose the semiconductive region. A conductive structure is formed adjacent to the contact hole. Spacers are formed on inner sidewalls of the contact hole. A cobalt silicide layer is formed at a bottom of the contact hole. The spacers are configured to electrically isolate the cobalt silicide layer from the conductive structure. A conductive layer is formed on the cobalt silicide layer in the contact hole.

Abstract: After a processing chamber is used to deposit a refractory metal film on a substrate, the chamber is plasma-treated with a gas including either nitrogen and/or hydrogen and in-situ cleaned. By plasma-treating the chamber with a gas including nitrogen, the refractory metal film that forms on interior surfaces of the chamber during substrate processing is nitrided. The nitrided refractory metal film can be removed from the chamber during the in-situ cleaning. By plasma-treating the chamber with a gas including hydrogen, reaction by-products generated in the chamber is diluted and removed. The chamber may be plasma-treated in a gas ambient including both nitrogen and hydrogen. Also, the plasma treatment may be performed before and after the in-situ cleaning.

Abstract: Methods of forming a capacitor can include forming a capacitor electrode including tantalum nitride. The capacitor electrode can be formed using a tantalum precursor including tantalum elements and bonding elements that are chemically bonded to the tantalum elements. Moreover, the tantalum precursor can include at least one of a tantalum amine derivative and/or a tantalum halide derivative. Related methods of forming integrated circuit devices are also discussed.

Abstract: A metal layer is formed on an integrated circuit device including forming an insulating layer on an integrated circuit substrate. A contact hole is formed by selectively etching the insulating layer to thereby partially expose the substrate. A metal layer including tantalum nitride is formed on the insulating layer including the contact hole using a tantalum precursor including a tantalum element and at least one bonding element that is chemically bonded to the tantalum element. A part of the at least one bonding element include at least one ligand bonding element that is ligand-bonded to the tantalum element. Forming the metal layer may include removing at least some of the ligand bonded elements with a removing gas that is substantially free of hydrogen radicals. The metal layer may be formed using a chemical vapor deposition (CVD) or an atomic layer deposition (ALD) process. A copper or other metal layer may be deposited on the metal layer including tantalum nitride.

Abstract: Methods of forming a metal layer in integrated circuit devices using selective electroplating in a recess are disclosed. In particular, a recess is formed in a surface of an insulating layer. The recess has a side wall inside the recess, a bottom inside the recess, and an edge at a boundary of the surface of the insulating layer and the side wall. A selective electroplating mask is formed on the side wall to provide a covered portion of the side wall and an exposed portion of the side wall. The exposed portion of the side wall can be electroplated with a metal. Related conductive contacts are also disclosed.

Abstract: The present invention discloses a method of manufacturing a semiconductor device having an upper capacitor electrode and a node resistor, including depositing a thin film at a first deposition rate on an edge portion of a wafer and at a second deposition rate on a central portion of the wafer to form the upper capacitor electrode and the node resistor, thereby improving step coverage of the upper capacitor electrode while simultaneously improving resistance distribution of the node resistor.

Abstract: Methods of forming metal layers include techniques to form metal layers using atomic layer deposition techniques that may be repeated in sequence to build up multiple atomic metal layers into a metal thin film. The methods include forming a metal layer by chemisorbing a metallic precursor comprising a metal element and at least one non-metal element that is ligand-bonded to the metal element, on a substrate. The metal element may include tantalum. The chemisorbed metallic precursor is then converted into the metal layer by removing the at least one non-metal element from the metallic precursor through ligand exchange. This removal of the non-metal element may be achieved by exposing the chemisorbed metallic precursor to an activated gas that is established by a remote plasma, which reduces substrate damage. The activated gas may be selected from the group consisting of H2, NH3, SiH4 and Si2H6 and combinations thereof. These steps may be performed at a temperature less than about 650° C.

Abstract: A selective metal layer formation method, a capacitor formation method using the same, and a method of forming an ohmic layer on a contact hole and filling the contact hole using the same, are provided. A sacrificial metal layer is selectively deposited on a conductive layer by supplying a sacrificial metal source gas which deposits selectively on a semiconductor substrate having an insulating film and the conductive layer. Sacrificial metal atoms and a halide are formed, and the sacrificial metal layer is replaced with a deposition metal layer such as titanium Ti or platinum Pt, by supplying a metal halide gas having a halogen coherence smaller than the halogen coherence of the metal atoms in the sacrificial metal layer. If such a process is used to form a capacitor lower electrode or form an ohmic layer on the bottom of a contact hole, a metal layer can be selectively formed at a temperature of 500° C. or lower.