Patents by Inventor Sang Chul Han
Sang Chul Han has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10126890Abstract: This disclosure generally provides an input device, electronic systems and processing system for touch sensing. In one example, an input device for touch sensing includes receiver electrodes and transmitter electrodes arranged in transmitter and receiver electrode columns. Each transmitter electrode within each transmitter electrode column is paired with two adjacent receiver electrodes of a first column of the receiver electrode columns. A first plurality of traces couple a first group of receiver electrodes in the first receiver electrode column, the first plurality of traces not passing between the transmitter and receiver electrodes of the first transmitter and receiver electrode columns. A second plurality of traces coupled a second group of receiver electrodes in the first receiver electrode column, the second plurality of traces passing between one of the transmitter electrodes of the first transmitter electrode column and one of the receiver electrodes of the second group of receiver electrodes.Type: GrantFiled: January 18, 2016Date of Patent: November 13, 2018Assignee: SYNAPTICS INCORPORATEDInventors: Qingbiao Deng, Ying Wang, Sang Chul Han, Yi-Fei Zhang
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Patent number: 9910531Abstract: A circular, single-layer sensor electrode pattern for input devices, such as wearable devices, is described. The sensor electrode pattern features transmitter electrodes and receiver electrodes tiled in alternating fashion, such that each receiver electrode is surrounded by transmitter electrodes. The individual sensor electrodes of the described pattern are designed to provide a substantially uniform electrode area size across the sensor. Additionally, the sensor electrode pattern is arranged to be symmetric across both horizontal and vertical axes. The provided characteristics of the sensor electrode pattern leads to a sensor structure having uniform absolute capacitive sensing measurements for all sensor electrodes as well as uniform transcapacitive sensing measurements for all “pixels.Type: GrantFiled: June 8, 2015Date of Patent: March 6, 2018Assignee: SYNAPTICS INCORPORATEDInventors: Sang Chul Han, Derek Solven
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Publication number: 20170338232Abstract: A method of fabricating semiconductor device is provided. The method includes providing a substrate having a trench, plasma-ionizing a gas which comprises a deposition material precursor and a doping material precursor to respectively obtain a plasma-ionized deposition material and a plasma-ionized doping material, and depositing the plasma-ionized deposition material and the plasma-ionized doping material in the trench by applying a bias voltage to a bottom surface of the trench, wherein the bottom surface of the trench comprises a first material, and sidewalls of the trench comprise a second material different from the first material.Type: ApplicationFiled: February 14, 2017Publication date: November 23, 2017Inventors: Sang Chul HAN, Do Hyung KIM, Tae ki HONG, Jin Hyuk CHOI, Moon Hyeong HAN
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Publication number: 20170192556Abstract: This disclosure generally provides an input device, electronic systems and processing system for touch sensing. In one example, an input device for touch sensing includes receiver electrodes and transmitter electrodes arranged in transmitter and receiver electrode columns. Each transmitter electrode within each transmitter electrode column is paired with two adjacent receiver electrodes of a first column of the receiver electrode columns. A first plurality of traces couple a first group of receiver electrodes in the first receiver electrode column, the first plurality of traces not passing between the transmitter and receiver electrodes of the first transmitter and receiver electrode columns. A second plurality of traces coupled a second group of receiver electrodes in the first receiver electrode column, the second plurality of traces passing between one of the transmitter electrodes of the first transmitter electrode column and one of the receiver electrodes of the second group of receiver electrodes.Type: ApplicationFiled: January 18, 2016Publication date: July 6, 2017Inventors: Qingbiao DENG, Ying WANG, Sang Chul HAN, Yi-Fei ZHANG
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Patent number: 9471896Abstract: Provided is a memo synchronization system, a mobile system, and a method for synchronizing memo data. The memo synchronization system includes a storage device, an authentication unit configured to authenticate a user by receiving authentication information of the user from a mobile terminal via a memo application installed in the mobile terminal, and a synchronization unit stored on the storage device and configured to synchronize memo data stored in the mobile terminal with memo data stored in a web storage space of an online memo service based on a request for synchronization transmitted from the mobile terminal through the memo application. The request for synchronization includes a synchronization request generated by the memo application according to an event set by the user.Type: GrantFiled: July 19, 2012Date of Patent: October 18, 2016Assignee: NHN CorporationInventors: Sang Chul Han, Kyungsoo Bae, Jung Doo Park, Pyoung Oh Yun
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Patent number: 9400263Abstract: Provided herein is a robot for inspecting pipelines as it moves along an outer surface of a pipeline, the robot comprising: a plurality of body parts detachably provided along a longitudinal direction of the pipeline; a connector configured to connect adjacent body parts, and to distance one of the connected body parts away from the pipeline so that the plurality of body parts may cross an obstacle; and a controller configured to control the connector to lift one of the body parts to cross an obstacle, with another body part secured to the pipeline.Type: GrantFiled: November 29, 2013Date of Patent: July 26, 2016Assignee: Research & Business Foundation SUNGKYUNKWAN UNIVERSITYInventors: Jae Kyu An, Sang Chul Han, Hyungpil Moon
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Publication number: 20160202826Abstract: A circular, single-layer sensor electrode pattern for input devices, such as wearable devices, is described. The sensor electrode pattern features transmitter electrodes and receiver electrodes tiled in alternating fashion, such that each receiver electrode is surrounded by transmitter electrodes. The individual sensor electrodes of the described pattern are designed to provide a substantially uniform electrode area size across the sensor. Additionally, the sensor electrode pattern is arranged to be symmetric across both horizontal and vertical axes. The provided characteristics of the sensor electrode pattern leads to a sensor structure having uniform absolute capacitive sensing measurements for all sensor electrodes as well as uniform transcapacitive sensing measurements for all “pixels.Type: ApplicationFiled: June 8, 2015Publication date: July 14, 2016Inventors: Sang Chul HAN, Derek SOLVEN
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Patent number: 9312124Abstract: A method of fabricating a semiconductor device may include: forming a field region defining an active region in a substrate; forming a gate trench in which the active and field regions are partially exposed; forming a gate insulating layer on a surface of the active region; conformally forming a gate barrier layer including metal on the gate insulating layer and partially exposed field region; forming a gate electrode layer including metal on the gate barrier layer; and/or forming a gate capping layer. Forming the gate insulating layer may include forming a first gate oxide layer by primarily oxidizing the active region's surface, and forming a second gate oxide layer between the active region's surface and the first gate oxide layer by secondarily oxidizing the active region's surface. The gate capping layer may be in contact with the gate insulating layer, gate barrier layer, and/or gate electrode layer.Type: GrantFiled: September 6, 2012Date of Patent: April 12, 2016Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Tai-Su Park, Gun-Joong Lee, Young-Dong Lee, Sang-Chul Han, Joo-Byoung Yoon
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Patent number: 9250019Abstract: A plate heat exchanger realizing improved heat exchange performance by increasing the fluidity of fluids and by promoting turbulence of the fluids, including: heat exchange elements stacked by being laid one on top of another and individually formed by assembling upper and lower plates, with an internal flow channel defined in each of the heat exchange elements and an external flow channel defined between the heat exchange elements, the internal and external flow channels allowing internal and external fluids to pass therethrough, respectively, wherein the upper and lower plates are provided with respective wave patterns having ridges and valleys, each of the heat exchange elements has an inlet port and an outlet port, the upper and lower plates respectively have an upper flange and a lower flange which are assembled with each other through fitting, and first and second flat parts are formed around the upper and lower flanges.Type: GrantFiled: July 23, 2010Date of Patent: February 2, 2016Assignee: Korea Delphi Automotive Systems CorporationInventors: Sang Chul Han, Sin Il Choi, Jang Ki Lee
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Publication number: 20150284847Abstract: In a method of forming an epitaxial layer, a first plasma may be generated from a first reaction gas in a first region. The first plasma may be applied to a second reaction gas provided to a second region isolated from the first region to generate a second plasma from the second reaction gas. A blocking gas may be injected into the second region toward an edge of the substrate to help prevent the first plasma and the second plasma from being horizontally diffused. The first plasma and the second plasma may be applied to the substrate to form the epitaxial layer. Thus, the epitaxial layer may be formed at a temperature relatively lower than a temperature in a heating process.Type: ApplicationFiled: October 22, 2014Publication date: October 8, 2015Inventors: Tae-Ki Hong, Young-Min Park, Hyoung-Won Oh, Jin-Hyuk Choi, Sang-Chul Han
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Publication number: 20150162167Abstract: In accordance with example embodiments, a plasma processing apparatus includes a chamber configured to peform a plasma process, an upper plate on the chamber, an antenna under the upper plate and the antenna is configured to generate plasma in the chamber, an upper insulator between the upper plate and the antenna and the upper insulator covers a top of the antenna, a lower insulator covering a bottom of the antenna, an antenna support ring configured to fix the antenna to the upper plate, and a metal gasket adhered to the antenna support ring.Type: ApplicationFiled: February 13, 2015Publication date: June 11, 2015Inventors: Jin Hyuk CHOI, Sang Chul HAN, Jong Il KEE, Young-Dong LEE, Guen Suk LEE, Seung Hun OH
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Patent number: 8980047Abstract: In accordance with example embodiments, a plasma processing apparatus includes a chamber configured to perform a plasma process, an upper plate on the chamber, an antenna under the upper plate and the antenna is configured to generate plasma in the chamber, an upper insulator between the upper plate and the antenna and the upper insulator covers a top of the antenna, a lower insulator covering a bottom of the antenna, an antenna support ring configured to fix the antenna to the upper plate, and a metal gasket adhered to the antenna support ring.Type: GrantFiled: July 1, 2011Date of Patent: March 17, 2015Assignee: Samsung Electronics Co., Ltd.Inventors: Jin Hyuk Choi, Sang Chul Han, Jong Il Kee, Young dong Lee, Guen Suk Lee, Seung Hun Oh
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Patent number: 8860671Abstract: An input device and a method for providing an input device are provided. The input device assembly includes a base, a sensor support, and a scissor mechanism attached to the base and the sensor support. The scissor mechanism allows for only substantially uniform translation of the sensor support towards the base in response to a force biasing the sensor support substantially towards the base.Type: GrantFiled: April 27, 2010Date of Patent: October 14, 2014Assignee: Synaptics IncorporatedInventors: James Jung, Sang Chul Han
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Patent number: 8835275Abstract: Semiconductor devices, and methods of fabricating the same, include forming device isolation regions in a substrate to define active regions, forming gate trenches in the substrate to expose the active regions and device isolation regions, conformally forming a preliminary gate insulating layer including silicon oxide on the active regions exposed in the grate trenches, nitriding the preliminary gate insulating layer using a radio-frequency bias having a frequency of about 13.56 MHz and power between about 100 W and about 300 W to form a nitrided preliminary gate insulating layer including silicon oxynitride, forming a gate electrode material layer on the nitride preliminary gate insulating layer, partially removing the nitrided preliminary gate insulating layer and the gate electrode material layer to respectively form a gate insulating layer and a gate electrode layer, and forming a gate capping layer on the gate electrode layer to fill the gate trenches.Type: GrantFiled: September 5, 2012Date of Patent: September 16, 2014Assignee: Samsung Electronics Co., Ltd.Inventors: Tai-Su Park, Jin-Hyuk Choi, Sang-Chul Han, Jung-Sup Oh, Young-Dong Lee
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Publication number: 20140156067Abstract: Provided herein is a robot for inspecting pipelines as it moves along an outer surface of a pipeline, the robot comprising: a plurality of body parts detachably provided along a longitudinal direction of the pipeline; a connector configured to connect adjacent body parts, and to distance one of the connected body parts away from the pipeline so that the plurality of body parts may cross an obstacle; and a controller configured to control the connector to lift one of the body parts to cross an obstacle, with another body part secured to the pipeline.Type: ApplicationFiled: November 29, 2013Publication date: June 5, 2014Applicant: Research & Business Foundation Sungkyunkwan UniversityInventors: Jae Kyu An, Sang-Chul Han, Hyungpil Moon
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Publication number: 20130171801Abstract: Semiconductor devices, and methods of fabricating the same, include forming device isolation regions in a substrate to define active regions, forming gate trenches in the substrate to expose the active regions and device isolation regions, conformally forming a preliminary gate insulating layer including silicon oxide on the active regions exposed in the grate trenches, nitriding the preliminary gate insulating layer using a radio-frequency bias having a frequency of about 13.56 MHz and power between about 100 W and about 300 W to form a nitrided preliminary gate insulating layer including silicon oxynitride, forming a gate electrode material layer on the nitride preliminary gate insulating layer, partially removing the nitrided preliminary gate insulating layer and the gate electrode material layer to respectively form a gate insulating layer and a gate electrode layer, and forming a gate capping layer on the gate electrode layer to fill the gate trenches.Type: ApplicationFiled: September 5, 2012Publication date: July 4, 2013Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Tai-Su PARK, Jin-Hyuk CHOI, Sang-Chul HAN, Jung-Sup OH, Young-Dong LEE
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Publication number: 20130164919Abstract: A method of fabricating a semiconductor device may include forming active and field regions in a substrate; forming a gate trench in which the active and field regions are exposed; forming a gate insulating layer on a surface of the exposed active region, wherein forming the gate insulating layer includes forming a first gate oxide layer by primarily oxidizing the surface of the active region, and forming a second gate oxide layer between the surface of the active region and the first gate oxide layer by secondarily oxidizing the surface of the active region; conformally forming a gate barrier layer on the gate insulating layer and the exposed field region; forming a gate electrode layer on the gate barrier layer; and forming a gate capping layer in contact with the gate insulating layer, the gate barrier layer, and the gate electrode layer in the gate trench.Type: ApplicationFiled: September 6, 2012Publication date: June 27, 2013Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Tai-Su PARK, Gun-Joong LEE, Young-Dong LEE, Sang-Chul HAN, Joo-Byoung YOON
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Patent number: 8441015Abstract: A method for fabricating an LCD device includes providing first and second substrates; forming an active layer on the first substrate and forming first and second ohmic contact layers on the active layer; forming a first insulation film on the first substrate; forming a gate electrode on the first substrate; forming a second insulation film on the first substrate; forming a pixel electrode on the first substrate; forming a third insulation film on the first substrate; removing a portion of the first to third insulation film to form first and second contact holes, wherein the first contact hole exposes a portion of the first ohmic contact layer and the second contact hole exposes a portion of the second ohmic contact layer; forming a source electrode electrically connected with the first ohmic contact layer within the first contact hole; forming a drain electrode electrically connected with the second ohmic contact layer and the pixel electrode within the second contact hole; and attaching the first and secondType: GrantFiled: December 15, 2005Date of Patent: May 14, 2013Assignee: LG Display Co., Ltd.Inventors: Sang Hee Yu, Sang Chul Han
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Publication number: 20130024917Abstract: Provided is a memo synchronization system, a mobile system, and a method for synchronizing memo data. The memo synchronization system includes a storage device, an authentication unit configured to authenticate a user by receiving authentication information of the user from a mobile terminal via a memo application installed in the mobile terminal, and a synchronization unit stored on the storage device and configured to synchronize memo data stored in the mobile terminal with memo data stored in a web storage space of an online memo service based on a request for synchronization transmitted from the mobile terminal through the memo application. The request for synchronization includes a synchronization request generated by the memo application according to an event set by the user.Type: ApplicationFiled: July 19, 2012Publication date: January 24, 2013Applicant: NHN CorporationInventors: Sang Chul HAN, Kyungsoo BAE, Jung Doo PARK, Pyoung Oh YUN
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Publication number: 20120118548Abstract: A plate heat exchanger realizing improved heat exchange performance by increasing the fluidity of fluids and by promoting turbulence of the fluids, including: heat exchange elements stacked by being laid one on top of another and individually formed by assembling upper and lower plates, with an internal flow channel defined in each of the heat exchange elements and an external flow channel defined between the heat exchange elements, the internal and external flow channels allowing internal and external fluids to pass therethrough, respectively, wherein the upper and lower plates are provided with respective wave patterns having ridges and valleys, each of the heat exchange elements has an inlet port and an outlet port, the upper and lower plates respectively have an upper flange and a lower flange which are assembled with each other through fitting, and first and second flat parts are formed around the upper and lower flanges.Type: ApplicationFiled: July 23, 2010Publication date: May 17, 2012Applicant: KOREA DELPHI AUTOMOTIVE SYSTEMS CORPORATIONInventors: Sang Chul Han, Sin Il Choi, Jang Ki Lee