Patents by Inventor Sang-Chul Lim
Sang-Chul Lim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9263592Abstract: A transistor includes source/drain electrodes provided on a substrate; a semiconductor oxide layer provided between the source/drain electrodes; a gate electrode facing the semiconductor oxide layer; and a gate insulating layer interposed between the semiconductor oxide layer and the gate electrode, wherein the semiconductor oxide layer has a nano-layered structure including at least one first nano layer comprised of a first material and at least one second nano layer comprised of a second material that are alternatingly stacked one on another to provide at least one interface, and wherein the first material and the second material are different materials that are effective to form an electron transfer channel layer at the interface.Type: GrantFiled: September 6, 2013Date of Patent: February 16, 2016Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTEInventors: Su Jae Lee, Chi-Sun Hwang, Hye Yong Chu, Sang Chul Lim, Jae-Eun Pi, Min Ki Ryu
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Publication number: 20150348800Abstract: Provided is a method for fabricating an electronic device, the method including: preparing a carrier substrate including an element region and a wiring region; forming a sacrificial layer on the carrier substrate; forming an electronic element on the sacrificial layer of the element region; forming a first elastic layer having a corrugated surface on the first elastic layer of the wiring region; forming a metal wirings electrically connecting the electronic element thereto, on the first elastic layer of the wiring region; forming a second elastic layer covering the metal wirings, on the first elastic layer; forming a high rigidity pattern filling in a recess of the second elastic layer above the electronic element so as to overlap the electronic element, and having a corrugated surface; forming a third elastic layer on the second elastic layer and the high rigidity pattern; and separating the carrier substrate.Type: ApplicationFiled: January 30, 2015Publication date: December 3, 2015Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTEInventors: Kyoung Ik CHO, Jae Bon KOO, Chan Woo PARK, Bock Soon NA, Sang Seok LEE, Sang Chul LIM, Soon-Won JUNG, Hye Yong CHU
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Publication number: 20150349136Abstract: Methods for manufacturing semiconductor devices according to embodiments of the present invention may include providing a sacrificial substrate including a wiring region and a device region, sequentially forming a sacrificial layer and a buffer layer on the sacrificial substrate, forming a thin-film transistor on the buffer layer of the device region, forming a device protection element surrounding the thin-film transistor within the device region, forming a flexible substrate on the buffer layer, and exposing a surface of the buffer layer by separating the sacrificial substrate by removing the sacrificial layer. Since typical semiconductor process technologies may be directly used, the process compatibility may be improved, and semiconductor devices having high resolution and high performance may be manufactured.Type: ApplicationFiled: January 30, 2015Publication date: December 3, 2015Inventors: Jae Bon KOO, Chan Woo PARK, Soon-Won JUNG, Bock Soon NA, Sang Chul LIM, Sang Seok LEE, Kyoung Ik CHO, Hye Yong CHU
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Patent number: 9177821Abstract: Provided is a method of fabricating an electronic circuit. The method includes preparing a substrate, forming a polymer film on the substrate, patterning the polymer film to form a polymer pattern, and forming an electronic device on the polymer pattern.Type: GrantFiled: April 22, 2014Date of Patent: November 3, 2015Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTEInventors: Soon-Won Jung, Jae Bon Koo, Chan Woo Park, Bock Soon Na, Sang Chul Lim, Sang Seok Lee, Kyoung Ik Cho, Hye Yong Chu
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Patent number: 9153651Abstract: Provided are a thin film transistor and a method for manufacturing the same. The thin film transistor manufacturing method includes forming a gate electrode on a substrate, forming an active layer that is adjacent to the gate electrode and includes an oxide semiconductor, forming an oxygen providing layer on the active layer, forming a gate dielectric between the gate electrode and the active layer, forming source and drain electrodes coupled to the active layer, forming a planarizing layer covering the gate electrode and the gate dielectric, forming a hole exposing the active layer, and performing a heat treatment process onto the planarizing layer in an atmosphere of oxygen.Type: GrantFiled: February 1, 2013Date of Patent: October 6, 2015Assignee: Electronics and Telecommunications Research InstituteInventors: Sang Chul Lim, Ji-Young Oh, Seongdeok Ahn, Kyoung Ik Cho, Sang Seok Lee, Jae Bon Koo
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Publication number: 20150252398Abstract: Disclosed is a method for the preparation of carbamic acid (R)-1-aryl-2-tetrazolyl-ethyl esters, comprising the enantioselective enzyme reduction of a 1-aryl-2-tetrazolyl-ethyl ketone to form a (R)-1-aryl-2-tetrazolyl-ethyl alcohol and the carbamation of said alcohol.Type: ApplicationFiled: May 22, 2015Publication date: September 10, 2015Inventors: Sang Chul LIM, Moo Yong UHM, Dae Won LEE, Hui Ho KIM, Dong Ho LEE, Hyun Seok LEE
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Patent number: 9068207Abstract: Disclosed is a method for the preparation of carbamic acid (R)-1-aryl-2-tetrazolyl-ethyl esters, comprising the enantioselective enzyme reduction of a 1-aryl-2-tetrazolyl-ethyl ketone to form a (R)-1-aryl-2-tetrazolyl-ethyl alcohol and the carbamation of said alcohol.Type: GrantFiled: February 26, 2013Date of Patent: June 30, 2015Assignee: SK BIOPHARMACEUTICALS CO. LTD.Inventors: Sang Chul Lim, Moo Yong Uhm, Dae Won Lee, Hui Ho Kim, Dong Ho Lee, Hyun Seok Lee
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Publication number: 20150173186Abstract: Provided is a stretchable devices. The stretchable device includes a first stretchable substrate having a first wavy surface that wrinkles in a first direction; first wiring lines extending along the first wavy surface in the first direction; a second stretchable substrate having a second wavy surface that faces the first wavy surface and wrinkles in a second direction intersecting the first direction, wherein the second stretchable substrate is disposed on the first stretchable substrate; second wiring lines extending along the second wavy surface in the second direction; and interlayer insulating layers disposed on the intersections of the first wiring lines and the second wiring lines and disposed between the first wiring lines and the second wiring lines.Type: ApplicationFiled: May 16, 2014Publication date: June 18, 2015Applicant: Electronics and Telecommunications Research InstituteInventors: Bock Soon NA, Soon-Won JUNG, Jae Bon KOO, Chan Woo PARK, Sang Chul LIM, Sang Seok LEE, Kyoung Ik CHO, Hye Yong CHU
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Publication number: 20150171354Abstract: Provided is a method for fabricating a flexible display device. The method includes attaching a shape memory alloy film memorizing a shape thereof as a curved shape at a shape memory temperature or lower to a flexible substrate at a temperature higher than the shape memory temperature, forming a display device on the flexible substrate, and returning the shape memory alloy to the curved shape to remove the shape memory alloy film from the flexible substrate.Type: ApplicationFiled: May 17, 2014Publication date: June 18, 2015Applicant: Electronics and Telecommunications Research InstituteInventors: Sang Seok LEE, Kyoung Ik CHO, Bock Soon NA, Sang Chul LIM, Chan Woo PARK, Soon-Won JUNG, Jae Bon KOO, Hye Yong CHU
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Publication number: 20150160511Abstract: Provided is a display device and a method of manufacturing the same. The display device includes a reflective display part including a first cathode electrode and a first anode electrode and a liquid crystal layer, a light emitting display part including a second cathode electrode and a second anode electrode and a light emission film, and a thin film transistor part being electrically connected to the first and second anode electrodes. The light emitting display part further includes a bank disposed on one side of the second anode electrode between the second anode electrode and the light emission film.Type: ApplicationFiled: May 23, 2014Publication date: June 11, 2015Applicant: Electronics and Telecommunications Research InstituteInventors: Yong Hae KIM, Gi Heon KIM, Hojun RYU, Chi-Sun HWANG, Jong-Heon YANG, Sang Chul LIM, Jae Bon KOO, Jonghee LEE, Jeong Ik LEE
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Publication number: 20150159266Abstract: Provided is a method of manufacturing a flexible substrate allowing an electronic device to be mounted thereto. The method of manufacturing a flexible substrate allowing an electronic device to be mountable thereto, includes preparing a substrate, applying a force to the substrate to stretch the substrate in horizontal direction, performing a surface treatment process on the substrate and forming a first region having a plurality of wavy surfaces, and forming an electrode on the first region.Type: ApplicationFiled: May 20, 2014Publication date: June 11, 2015Applicant: Electronics and Telecommunications Research InstituteInventors: Sang Chul LIM, Jae Bon KOO, Chan Woo PARK, Soon-Won JUNG, Bock Soon NA, Sang Seok LEE, Kyoung Ik CHO, Hye Yong CHU
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Publication number: 20150147854Abstract: Provided is a method of fabricating an electronic circuit. The method includes preparing a substrate, forming a polymer film on the substrate, patterning the polymer film to form a polymer pattern, and forming an electronic device on the polymer pattern.Type: ApplicationFiled: April 22, 2014Publication date: May 28, 2015Applicant: Electronics and Telecommunications Research InstituteInventors: Soon-Won JUNG, Jae Bon KOO, Chan Woo PARK, Bock Soon NA, Sang Chul LIM, Sang Seok LEE, Kyoung Ik CHO, Hye Yong CHU
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Patent number: 9040337Abstract: Provided are a stretchable electronic device and a method of manufacturing the same. The manufacturing method includes forming coil interconnection on a first substrate, forming a first stretchable insulating layer that covers the coil interconnection, forming a second substrate on the first stretchable insulating layer, separating the first substrate from the coiling interconnection and the first stretchable insulating layer, and forming a transistor on the coil interconnection.Type: GrantFiled: March 15, 2013Date of Patent: May 26, 2015Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTEInventors: Chan Woo Park, Jae Bon Koo, Sang Chul Lim, Ji-Young Oh, Soon-Won Jung
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Publication number: 20150048375Abstract: Provided is a method of manufacturing a gradually stretchable substrate. The method includes forming convex regions and concave regions on a top surface of a stretchable substrate by compressing a mold onto the stretchable substrate and forming non-stretchable patterns by filling the concave regions of the stretchable substrate. The stretchable substrate includes a stretchable region defined by the non-stretchable patterns, the non-stretchable patterns have side surfaces in contact with the stretchable region, and the side surfaces of the non-stretchable patterns are formed of protrusions and a non-protrusion between the protrusions repetitively connected to one another.Type: ApplicationFiled: April 2, 2014Publication date: February 19, 2015Applicant: Electronics and Telecommunications Research InstituteInventors: Ji-Young OH, Jae Bon KOO, Sang Chul LIM, Chan Woo PARK, Soon-Won JUNG, Bock Soon NA, Sang Seok LEE, Hye Yong CHU
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Patent number: 8912094Abstract: Provided is a method for manufacturing a stretchable thin film transistor. The method for manufacturing a stretchable thin film transistor includes forming a mold substrate, forming a stretchable insulator on the mold substrate, forming a flat substrate on the stretchable insulator, removing the mold substrate, forming discontinuous and corrugated wires on the stretchable insulator, forming a thin film transistor connected between the wires, and removing the flat substrate.Type: GrantFiled: March 18, 2013Date of Patent: December 16, 2014Assignee: Electronics and Telecommunications Research InstituteInventors: Jae Bon Koo, Chan Woo Park, Soon-Won Jung, Sang Chul Lim, Ji-Young Oh, Bock Soon Na, Hye Yong Chu
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Publication number: 20140299362Abstract: Provided are a stretchable electric circuit and a manufacturing method thereof The method for manufacturing the stretchable electric circuit includes forming a mold substrate, forming a stretchable substrate having a first flat surface and a first corrugated surface outside the first flat surface on the mold substrate, removing the mold substrate, forming a corrugated wire on the first corrugated surface, and forming an electric device connected to the corrugated wire on the first flat surface.Type: ApplicationFiled: April 3, 2014Publication date: October 9, 2014Applicant: Electronics and Telecommunications Research InstituteInventors: Chan Woo PARK, Jae Bon KOO, Soon-Won JUNG, Sang Chul LIM, Ji-Young OH, Bock Soon NA, Sang Seok LEE, Hye Yong CHU
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Publication number: 20140218872Abstract: Provided is an electronic circuit. The electronic circuit includes: a substrate including a device region and a wiring region; an electronic device disposed on the device region; and a conductive wire disposed on the wiring region and connected to the electronic device, wherein the substrate has a first side where the electronic device and the conductive wire contact and a second side facing the first side; the first side and the second side of the wiring region have a convex structure; the first side of the device region is flat; and the device region is thicker than the wiring region.Type: ApplicationFiled: November 25, 2013Publication date: August 7, 2014Applicant: Electronics and Telecommunications Research InstituteInventors: Chan Woo PARK, Jae Bon KOO, Soon-Won JUNG, Bock Soon NA, Sang Chul LIM, Ji-Young OH, Hye Yong CHU
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Publication number: 20140159036Abstract: According to example embodiments of the inventive concept, provided is a transistor with a nano-layered oxide semiconductor layer. The oxide semiconductor layer may include at least one first nano layer and at least one second nano layer that are alternatingly stacked one on another. Here, the first nano layer and the second nano layer may include different materials from each other, and thus, a channel with high electron mobility may be formed at the interface between the first and second nano layers. Accordingly, the transistor can have high reliability.Type: ApplicationFiled: September 6, 2013Publication date: June 12, 2014Applicant: Electronics and Telecommunications Research InstituteInventors: Su Jae LEE, Chi-Sun HWANG, Hye Yong CHU, Sang Chul LIM, Jae-Eun PI, Min Ki RYU
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Publication number: 20140161976Abstract: Disclosed are methods of forming a core-shell nano particle for a metal ink. The method includes forming a metal oxide nano particle core, and forming a metal shell on a surface of the metal oxide nano particle core to form a core-shell nano particle.Type: ApplicationFiled: May 30, 2013Publication date: June 12, 2014Inventors: Ji-Young OH, Sang Chul LIM, Seongdeok AHN, Chan Woo PARK, Jae Bon KOO
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Publication number: 20140134840Abstract: Provided is a method for manufacturing a stretchable thin film transistor. The method for manufacturing a stretchable thin film transistor includes forming a mold substrate, forming a stretchable insulator on the mold substrate, forming a flat substrate on the stretchable insulator, removing the mold substrate, forming discontinuous and corrugated wires on the stretchable insulator, forming a thin film transistor connected between the wires, and removing the flat substrate.Type: ApplicationFiled: March 18, 2013Publication date: May 15, 2014Applicant: Electronics And Telecommunications Research InstituteInventors: Jae Bon KOO, Chan Woo PARK, Soon-Won JUNG, Sang Chul LIM, Ji-Young OH, Bock Soon NA, Hye Yong CHU