Abstract: An apparatus for manufacturing a display device includes a plurality of working tables, a plurality of arm modules, and a rotator. The plurality of working tables are spaced apart from each other in a first direction and are configured to support a target board. The plurality of arm modules are arranged in the first direction and spaced apart from the plurality of working tables in a second direction intersecting the first direction. The rotator is connected to the plurality of arm modules and configured to rotate about a rotation axis extending in the first direction.

Abstract: A depth-wise convolution acceleration device using an MAC array processor structure according to the present invention may include a data output unit, which receives a data of each row of the image from the data buffer and inputs the data into convolution operation blocks while shifting the data N?1 times according to the kernel size (N×N) and a weight output unit, which receives the kernel data from the kernel buffer and sequentially inputs a weight value constituting the kernel data to each of the row convolution operation blocks, and inputs the weight delaying by N clocks if the row increases as N rows.

Abstract: The present disclosure relates to an organic electroluminescent compound, a plurality of host materials, and an organic electroluminescent device comprising the same. By comprising the compound according to the present disclosure or by comprising a specific combination of compounds according to the present disclosure as a plurality of host materials, it is possible to produce an organic electroluminescent device having improved driving voltage, luminous efficiency, and/or lifetime properties compared to the conventional organic electroluminescent devices.

Abstract: An airbag device and a method for controlling deployment of the same are proposed. The airbag device is configured to protect a passenger by controlling an airbag cushion deployed toward the rear space of a seatback in an event of a vehicle collision, and the airbag device includes an airbag cushion deploying toward the rear space of the seatback, a sensor part detecting a seating status and a seating posture of a passenger with respect to each seat, and a controller, in an event of a collision, configured to change and control a deploying status of the airbag cushion and an inflation amount of the airbag cushion in response to the seating status and the seating posture of the passenger.

Abstract: Disclosed are a shoulder airbag and an airbag cushion thereof that are capable of restricting an occupant from being moved upward along a seatback and from being abruptly pushed in a direction away from a collision side of a vehicle when vehicle collision occurs, thereby safely protecting the occupant. The shoulder airbag includes an airbag cushion mounted in a seatback and configured to be deployed so as to cover each of the shoulders of an occupant sitting in a seat in three axis directions.

Abstract: A semiconductor device includes a first semiconductor layer having first and second regions, a plurality of first channel layers spaced apart from each other in a vertical direction on the first region of the first semiconductor layer, a first gate electrode surrounding the plurality of first channel layers, a plurality of second channel layers spaced apart from one another in the vertical direction on the second region of the first semiconductor layer, and a second gate electrode surrounding the plurality of second channel layers, wherein each of the plurality of first channel layers has a first crystallographic orientation, and each of the plurality of second channel layers has a second crystallographic orientation different from the first crystallographic orientation, and wherein a thickness of each of the plurality of first channel layers is different from a thickness of each of the plurality of second channel layers.

Abstract: An apparatus for manufacturing a display device includes a plurality of working tables, a plurality of arm modules, and a rotator. The plurality of working tables are spaced apart from each other in a first direction and are configured to support a target board. The plurality of arm modules are arranged in the first direction and spaced apart from the plurality of working tables in a second direction intersecting the first direction. The rotator is connected to the plurality of arm modules and configured to rotate about a rotation axis extending in the first direction.

Abstract: A display device includes a display panel having a folding axis extending in a first direction; and a panel supporter disposed on a surface of the display panel. The panel supporter includes a first layer including a first base resin and first fiber yarns extending in the first direction and dispersed in the first base resin, a second layer disposed on the first layer, the second layer including a second base resin and second fiber yarns extending in a second direction intersecting the first direction and dispersed in the second base resin, and a third layer disposed on the second layer, the third layer including a third base resin and third fiber yarns extending in the first direction and dispersed in the third base resin.

Abstract: Disclosed is a polyphenylene sulfide resin composition for an automobile part that includes 30 to 40 parts by weight of a glass fiber, 10 to 20 parts by weight of glass bead, and 5 to 10 parts by weight of a polyolefin resin for each 100 parts by weight of a polyphenylene sulfide resin.

Abstract: A semiconductor device includes: a fin-type active region extending on a substrate in a first direction that is parallel to an upper surface of the substrate; and a source/drain region in a recess region extending into the fin-type active region, wherein the source/drain region includes: a first source/drain material layer; a second source/drain material layer on the first source/drain material layer; and a first dopant diffusion barrier layer on an interface between the first source/drain material layer and the second source/drain material layer.

Abstract: A semiconductor device includes: a fin-type active region extending on a substrate in a first direction that is parallel to an upper surface of the substrate; and a source/drain region in a recess region extending into the fin-type active region, wherein the source/drain region includes: a first source/drain material layer; a second source/drain material layer on the first source/drain material layer; and a first dopant diffusion barrier layer on an interface between the first source/drain material layer and the second source/drain material layer.

Abstract: The present invention relates to a resin molded product having excellent impact resistance and weather resistance and low dielectric loss and a RADAR module including the same, wherein the resin molded product has a permittivity of 3.7 F/m or less and a dielectric loss of 0.023 or less in the frequency range of 77 GHz, has a high-speed impact strength according to ASTM D3763 of 400 kg·m/s2 or greater, and has an electromagnetic wave transmission coefficient of ?0.8 dB or greater in the frequency range of 77 GHz to 79 GHz.

Abstract: A semiconductor device includes a first active pattern having a first lower pattern and a first sheet pattern on the first lower pattern. First gate structures include a first gate electrode. A second active pattern includes a second lower pattern. A second sheet pattern is on the second lower pattern. Second gate structures include a second gate electrode that surrounds the second sheet pattern. A first source/drain recess is between adjacent first gate structures. A second source/drain recess is between adjacent second gate structures. A first source/drain pattern extends along the first source/drain recess. A first silicon germanium filling film is on the first silicon germanium liner. A second source/drain pattern includes a second silicon germanium liner extending along the second source/drain recess. A second silicon germanium filling film is on the second silicon germanium liner.

Abstract: The present invention relates to a method for producing lithium phosphate, comprising: passing a lithium-containing solution through an aluminum-based adsorbent to adsorb lithium on the aluminum-based adsorbent, passing the distilled water or an aqueous solution having a lower lithium concentration than the lithium-containing solution through the aluminum-based adsorbent on which the lithium is adsorbed to obtain a lithium-containing desorption solution, and putting a phosphorous supplying material in the lithium-containing desorption solution to obtain lithium phosphate.

Abstract: A semiconductor device including: a plurality of fin-shaped patterns spaced apart from each other in a first direction and extending in a second direction on a substrate; a field insulating layer covering sidewalls of the plurality of fin-shaped patterns and disposed between the fin-shaped patterns; a source/drain pattern connected to the plurality of fin-shaped patterns on the field insulating layer, the source/drain pattern including bottom surfaces respectively connected to the fin-shaped patterns, and at least one connection surface connecting the bottom surfaces to each other; and a sealing insulating pattern extending along the connection surface of the source/drain pattern and an upper surface of the field insulating layer, wherein the source/drain pattern includes a silicon-germanium pattern doped with a p-type impurity.

Abstract: A semiconductor device includes a substrate including a first region and a second region, a first active pattern on the first region, a first gate structure having a first width in the first direction, on the first active pattern, a first epitaxial pattern disposed in the first active pattern on a side surface of the first gate structure, a second active pattern on the second region, a second gate structure having a second width greater than the first width in the first direction, on the second active pattern and a second epitaxial pattern disposed in the second active pattern on a side surface of the second gate structure. Each of the first epitaxial pattern and the second epitaxial pattern includes silicon germanium (SiGe), and a first Ge concentration of the first epitaxial pattern is lower than a second Ge concentration of the second epitaxial pattern.

Abstract: A semiconductor device including first fin-shaped patterns in a first region of a substrate and spaced apart from each other in a first direction, second fin-shaped patterns in a second region of the substrate and spaced apart from each other in a second direction, a first field insulating film on the substrate and covering sidewalls of the first fin-shaped patterns, a second field insulating film on the substrate and covering sidewalls of the second fin-shaped patterns, a first source/drain pattern on the first field insulating film, connected to the first fin-shaped patterns, and including a first silicon-germanium pattern, and a second source/drain pattern on the second field insulating film, connected to the second fin-shaped patterns, and including a second silicon-germanium pattern, the second source/drain pattern and the second field insulating film defining one or more first air gaps therebetween may be provided.

Abstract: The present invention relates to a lithium compound manufacturing method comprising the steps of heat treatment of lithium-containing ore; roasting the heat-treated ore with sulfuric acid to prepare an acid product; mixing the acid product with leaching water to prepare a leachate; purifying the leachate; and adding a phosphorus supply material and a basic material to the purified leachate to obtain a solid lithium phosphate.

Abstract: The present disclosure relates to a knee joint augment having an anatomical shape. More specifically, the present disclosure relates to a knee joint augment that is used for artificial joint replacement to replace lost bone, wherein the augment is used in artificial knee replacement surgery to be coupled to a knee implant. The augment includes a top surface configured to be brought into contact with a distal surface of a base plate that forms the body of a tibia element and a bottom surface configured to be brought into contact with a cut surface of a tibia. The bottom surface has an area smaller than that of the top surface, and has a tapered shape that narrows from the top to the bottom.

Abstract: A semiconductor device includes: a fin-type active region extending on a substrate in a first direction that is parallel to an upper surface of the substrate; and a source/drain region in a recess region extending into the fin-type active region, wherein the source/drain region includes: a first source/drain material layer; a second source/drain material layer on the first source/drain material layer; and a first dopant diffusion barrier layer on an interface between the first source/drain material layer and the second source/drain material layer.