Patents by Inventor Sang H. CHOI, SR.

Sang H. CHOI, SR. has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Fabrication of metallic hollow nanoparticles
    Patent number: 9446953
    Abstract: Metal and semiconductor nanoshells, particularly transition metal nanoshells, are fabricated using dendrimer molecules. Metallic colloids, metallic ions or semiconductors are attached to amine groups on the dendrimer surface in stabilized solution for the surface seeding method and the surface seedless method, respectively. Subsequently, the process is repeated with additional metallic ions or semiconductor, a stabilizer, and NaBH4 to increase the wall thickness of the metallic or semiconductor lining on the dendrimer surface. Metallic or semiconductor ions are automatically reduced on the metallic or semiconductor nanoparticles causing the formation of hollow metallic or semiconductor nanoparticles. The void size of the formed hollow nanoparticles depends on the dendrimer generation. The thickness of the metallic or semiconductor thin film around the dendrimer depends on the repetition times and the size of initial metallic or semiconductor seeds.
    Type: Grant
    Filed: December 4, 2008
    Date of Patent: September 20, 2016
    Assignee: The United States of America as represented by the Administrator of the National Aeronautics and Space Administration
    Inventors: Jae-Woo Kim, Sang H. Choi, Sr., Peter T. Lillehei, Sang-Hyon Chu, Yeonjoon Park, Glen C. King, James R. Elliott
  • Fabrication of metallic hollow nanoparticles
    Publication number: 20090203196
    Abstract: Metal and semiconductor nanoshells, particularly transition metal nanoshells, are fabricated using dendrimer molecules. Metallic colloids, metallic ions or semiconductors are attached to amine groups on the dendrimer surface in stabilized solution for the surface seeding method and the surface seedless method, respectively. Subsequently, the process is repeated with additional metallic ions or semiconductor, a stabilizer, and NaBH4 to increase the wall thickness of the metallic or semiconductor lining on the dendrimer surface. Metallic or semiconductor ions are automatically reduced on the metallic or semiconductor nanoparticles causing the formation of hollow metallic or semiconductor nanoparticles. The void size of the formed hollow nanoparticles depends on the dendrimer generation. The thickness of the metallic or semiconductor thin film around the dendrimer depends on the repetition times and the size of initial metallic or semiconductor seeds.
    Type: Application
    Filed: December 4, 2008
    Publication date: August 13, 2009
    Applicants: National Institute of Aerospace Associates, USA as represented by the Administrator of the National Aeronautics and Space Administration
    Inventors: Jae-Woo KIM, Sang H. CHOI, SR., Peter T. LILLEHEI, Sang-Hyon CHU, Yeonjoon PARK, Glen C. KING, James R. ELLIOTT, JR.