Abstract: The semiconductor memory device including a first sense amplifier region including first metal-oxide-semiconductor (MOS) transistors disposed in a well on a semiconductor substrate, a second sense amplifier region adjacent to the well and including second MOS transistors disposed on the semiconductor substrate, a guard band having a bar type structure and provided between the first MOS transistors in the well, and a guard ring partially or fully enclosing the second sense amplifier region in the semiconductor substrate may be provided.

Abstract: A semiconductor device including a driving region and a dummy region disposed at both side of the driving region includes a semiconductor substrate having a plurality of active regions spaced from each by equal distances in the driving region, a dummy active region in the dummy region, and a guard ring region surrounding the active regions and the dummy active regions. The distance between the dummy active region and the active region nearest to the dummy active region is substantially the same as each distance between adjacent ones of the active regions, and is smaller than the distance between the dummy active region and a portion of the guard ring region nearest to the dummy active region.

Abstract: A semiconductor device including a driving region and a dummy region disposed at both side of the driving region includes a semiconductor substrate having a plurality of active regions spaced from each by equal distances in the driving region, a dummy active region in the dummy region, and a guard ring region surrounding the active regions and the dummy active regions. The distance between the dummy active region and the active region nearest to the dummy active region is substantially the same as each distance between adjacent ones of the active regions, and is smaller than the distance between the dummy active region and a portion of the guard ring region nearest to the dummy active region.