Abstract: An integrated hybrid crystal Light Emitting Diode (“LED”) display device that may emit red, green, and blue colors on a single wafer. The various embodiments may provide double-sided hetero crystal growth with hexagonal wurtzite III-Nitride compound semiconductor on one side of (0001) c-plane sapphire media and cubic zinc-blended III-V or II-VI compound semiconductor on the opposite side of c-plane sapphire media. The c-plane sapphire media may be a bulk single crystalline c-plane sapphire wafer, a thin free standing c-plane sapphire layer, or crack-and-bonded c-plane sapphire layer on any substrate. The bandgap energies and lattice constants of the compound semiconductor alloys may be changed by mixing different amounts of ingredients of the same group into the compound semiconductor. The bandgap energy and lattice constant may be engineered by changing the alloy composition within the cubic group IV, group III-V, and group II-VI semiconductors and within the hexagonal III-Nitrides.

Abstract: A method for receiving a signal by using M multiple beams in a multi-antenna system including N antenna elements, is provided in and embodiment of the present application. The method includes setting, by M beams, a beam direction for the M beams and a modulation frequency for frequency modulation of a beam response and generating the M beams according to the beam direction and the modulation frequency set by the beams. M beam responses are generated for a receiving signal by using the generated M beams and the generated M beam responses are frequency modulated by using the modulation frequency set by the beams. The frequency-modulated M beam responses are band-pass filtered so as to separate the M beam responses and the separated M beam responses are respectively demodulated.

Abstract: An integrated hybrid crystal Light Emitting Diode (“LED”) display device that may emit red, green, and blue colors on a single wafer. The various embodiments may provide double-sided hetero crystal growth with hexagonal wurtzite III-Nitride compound semiconductor on one side of (0001) c-plane sapphire media and cubic zinc-blended III-V or II-VI compound semiconductor on the opposite side of c-plane sapphire media. The c-plane sapphire media may be a bulk single crystalline c-plane sapphire wafer, a thin free standing c-plane sapphire layer, or crack-and-bonded c-plane sapphire layer on any substrate. The bandgap energies and lattice constants of the compound semiconductor alloys may be changed by mixing different amounts of ingredients of the same group into the compound semiconductor. The bandgap energy and lattice constant may be engineered by changing the alloy composition within the cubic group IV, group III-V, and group II-VI semiconductors and within the hexagonal III-Nitrides.

Abstract: One aspect of the present invention is a double sided hybrid crystal structure including a trigonal Sapphire wafer containing a (0001) C-plane and having front and rear sides. The Sapphire wafer is substantially transparent to light in the visible and infrared spectra, and also provides insulation with respect to electromagnetic radio frequency noise. A layer of crystalline Si material having a cubic diamond structure aligned with the cubic <111> direction on the (0001) C-plane and strained as rhombohedron to thereby enable continuous integration of a selected (SiGe) device onto the rear side of the Sapphire wafer. The double sided hybrid crystal structure further includes an integrated III-Nitride crystalline layer on the front side of the Sapphire wafer that enables continuous integration of a selected III-Nitride device on the front side of the Sapphire wafer.

Abstract: Systems, methods, and devices of the various embodiments described herein enable an energy conversion system comprising a radioactive element for generating conduction-band electrons in an avalanche cell and generating heat, wherein the conduction-band electrons are provided to an anode to generate avalanche cell power, and the heat is provided to a thermoelectric generator to generate thermoelectric power. In an embodiment, the avalanche cell is irradiated with gamma rays, which excite electrons within the avalanche cell, generating a current. In an additional embodiment, the thermoelectric power and avalanche cell power can comprise a dual power system.

Abstract: A beamforming method is provided. The beamforming method includes determining different beams for pieces of user equipment based on channel information fed back from the pieces of user equipment, predicting beam qualities of the pieces of user equipment for the beams, determining whether the beam qualities satisfy Quality of Service (QoS) for the pieces of user equipment, generating a wide nulling beam by applying wide nulling to a second beam having a side lobe acting as interference against one first beam, when the beam quality of the first beam does not satisfy the QoS; predicting beam qualities for the beams including the wide nulling beam instead of the second beam, and simultaneously communicating with the user equipment through the beams including the wide nulling beam instead of the second beam, when the beam qualities for the beams including the wide nulling beam instead of the second beam satisfy the QoS.

Abstract: A spectrometer that includes a grating that disperses light via Fresnel diffraction according to wavelength onto a sensing area that coincides with an optical axis plane of the grating. The sensing area detects the dispersed light and measures the light intensity associated with each wavelength of the light. Because the spectrometer utilizes Fresnel diffraction, it can be miniaturized and packaged as an integrated circuit.

Abstract: An X-ray defraction (XRD) characterization method for sigma=3 twin defects in cubic semiconductor (100) wafers includes a concentration measurement method and a wafer mapping method for any cubic tetrahedral semiconductor wafers including GaAs (100) wafers and Si (100) wafers. The methods use the cubic semiconductor's (004) pole figure in order to detect sigma=3/{111} twin defects. The XRD methods are applicable to any (100) wafers of tetrahedral cubic semiconductors in the diamond structure (Si, Ge, C) and cubic zinc-blende structure (InP, InGaAs, CdTe, ZnSe, and so on) with various growth methods such as Liquid Encapsulated Czochralski (LEC) growth, Molecular Beam Epitaxy (MBE), Organometallic Vapor Phase Epitaxy (OMVPE), Czochralski growth and Metal Organic Chemical Vapor Deposition (MOCVD) growth.

Abstract: Disclosed is a system and method for characterizing optical materials, using steps and equipment for generating a coherent laser light, filtering the light to remove high order spatial components, collecting the filtered light and forming a parallel light beam, splitting the parallel beam into a first direction and a second direction wherein the parallel beam travelling in the second direction travels toward the material sample so that the parallel beam passes through the sample, applying various physical quantities to the sample, reflecting the beam travelling in the first direction to produce a first reflected beam, reflecting the beam that passes through the sample to produce a second reflected beam that travels back through the sample, combining the second reflected beam after it travels back though the sample with the first reflected beam, sensing the light beam produced by combining the first and second reflected beams, and processing the sensed beam to determine sample characteristics and properties.

Abstract: A lock-in imaging system is configured for detecting a disturbance in air. The system includes an airplane, an interferometer, and a telescopic imaging camera. The airplane includes a fuselage and a pair of wings. The airplane is configured for flight in air. The interferometer is operatively disposed on the airplane and configured for producing an interference pattern by splitting a beam of light into two beams along two paths and recombining the two beams at a junction point in a front flight path of the airplane during flight. The telescopic imaging camera is configured for capturing an image of the beams at the junction point. The telescopic imaging camera is configured for detecting the disturbance in air in an optical path, based on an index of refraction of the image, as detected at the junction point.

Abstract: Provided is a method for measuring multi-point interferometric angle changes beginning with an interferometric device capable of measuring at least one main point and at least one reference point. The method includes recording interferometric intensity changes on two or more spots using the main point and the reference point, and determining a sequence having a plurality of peak, local maximas and a plurality of valley, local minimas. The method includes sampling a first, partial sequence and comparing it to a neighboring, partial sequence using a perturbation analysis and additional calculation(s) to compile all phase angle changes for all measured points. Also provided is a computer implemented method to enable nanometer resolution sensitivity in a noisy signal and for characterization of a material in an interferometric device.

Abstract: An integrated hybrid crystal Light Emitting Diode (“LED”) display device that may emit red, green, and blue colors on a single wafer. The various embodiments may provide double-sided hetero crystal growth with hexagonal wurtzite III-Nitride compound semiconductor on one side of (0001) c-plane sapphire media and cubic zinc-blended III-V or II-VI compound semiconductor on the opposite side of c-plane sapphire media. The c-plane sapphire media may be a bulk single crystalline c-plane sapphire wafer, a thin free standing c-plane sapphire layer, or crack-and-bonded c-plane sapphire layer on any substrate. The bandgap energies and lattice constants of the compound semiconductor alloys may be changed by mixing different amounts of ingredients of the same group into the compound semiconductor. The bandgap energy and lattice constant may be engineered by changing the alloy composition within the cubic group IV, group III-V, and group II-VI semiconductors and within the hexagonal III-Nitrides.

Abstract: An electronic device includes a trigonal crystal substrate defining a (0001) C-plane. The substrate may comprise Sapphire or other suitable material. A plurality of rhomhohedrally aligned SiGe (111)-oriented crystals are disposed on the (0001) C-plane of the crystal substrate. A first region of material is disposed on the rhombohedrally aligned SiGe layer. The first region comprises an intrinsic or doped Si, Ge, or SiGe layer. The first region can be layered between two secondary regions comprising n+doped SiGe or n+doped Ge, whereby the first region collects electrons from the two secondary regions.

Abstract: One aspect of the present invention is a double sided hybrid crystal structure including a trigonal Sapphire wafer containing a (0001) C-plane and having front and rear sides. The Sapphire wafer is substantially transparent to light in the visible and infrared spectra, and also provides insulation with respect to electromagnetic radio frequency noise. A layer of crystalline Si material having a cubic diamond structure aligned with the cubic <111> direction on the (0001) C-plane and strained as rhombohedron to thereby enable continuous integration of a selected (SiGe) device onto the rear side of the Sapphire wafer. The double sided hybrid crystal structure further includes an integrated III-Nitride crystalline layer on the front side of the Sapphire wafer that enables continuous integration of a selected III-Nitride device on the front side of the Sapphire wafer.

Abstract: Provided is a method of enhancing thermoelectric performance by surrounding crystalline semiconductors with nanoparticles by contacting a bismuth telluride material with a silver salt under a substantially inert atmosphere and a temperature approximately near the silver salt decomposition temperature; and recovering a metallic bismuth decorated material comprising silver telluride crystal grains.

Abstract: Provided is a deep brain stimulation (DBS) device that wirelessly receives microwaves from a power transmission antenna installed at a hat put on a patient, transforms the microwaves into power, and drives electrodes implanted into a brain of the patient using the power, so as to correct abnormal motor and sensory functions of the patient. The DBS device includes: a hat module configured for placement over a head of the patient to transmit microwaves, and an implantation module configured to be implanted through a skull under a scalp to contact the cerebral nerve of the patient, receive the microwaves from the hat module, transform the microwaves into direct current (DC) power, and stimulate the cerebral nerve using the DC power.

Abstract: Provided is a neural electronic interface (NEI) device that includes: a deep brain monitoring and stimulation (DBMS) module that wirelessly receives power from a power transmitter at a hat put on a patient, monitors a state of a brain of the patient by collecting various signals of the brain through a probe pin device (PPD), and transmits the collected signals to a communicator of the hat, wherein a remote controller of the hat analyzes the collected signals and controls the DBMS through the controller to stimulate the brain.

Abstract: Provided is a deep brain stimulation (DBS) device having power wirelessly fed by magnetic induction. A rotating magnetic field is formed using a rotating magnetic field disk installed inside a hat of a patient. The rotating magnetic field generates induced power using an induction coil plate fixed underneath a scalp of the patient to drive electrodes implanted into a brain of the patient so as to correct abnormal motor and sensory functions of the patient using power wirelessly fed from an external device into the electrodes. The DBS device includes: a hat module installed inside a hat of the patient to generate a rotating magnetic field; and an implantation module implanted through a skull under a scalp to contact a nervous system of the patient and combined with the rotating magnetic field of the hat module to stimulate the cerebral nerve using induced power generated by the magnetic induction.

Abstract: Provided is a method of enhancing thermoelectric performance by surrounding crystalline semiconductors with nanoparticles by contacting a bismuth telluride material with a silver salt under a substantially inert atmosphere and a temperature approximately near the silver salt decomposition temperature; and recovering a metallic bismuth decorated material comprising silver telluride crystal grains.

Abstract: Provided is a method for measuring multi-point interferometric angle changes beginning with an interferometric device capable of measuring at least one main point and at least one reference point. The method includes recording interferometric intensity changes on two or more spots using the main point and the reference point, and determining a sequence having a plurality of peak, local maximas and a plurality of valley, local minimas. The method includes sampling a first, partial sequence and comparing it to a neighboring, partial sequence using a perturbation analysis and additional calculation(s) to compile all phase angle changes for all measured points. Also provided is a computer implemented method to enable nanometer resolution sensitivity in a noisy signal and for characterization of a material in an interferometric device.