Abstract: An external high/low voltage compatible semiconductor memory device includes an internal voltage pad, an internal voltage generation circuit, and an internal voltage control signal generation circuit. The internal voltage pad connects a low external voltage with an internal voltage, and the internal voltage generation circuit generates an internal voltage in response to an internal voltage control signal and a high external voltage. The internal voltage control signal generation circuit generates an internal voltage control signal according to an high or low external voltage. Thus, a database of the semiconductor memory device can be managed without classifying the database into databases for the high voltage and databases for the low voltage because of the internal voltage control signal. In addition, the internal voltage level is stable because charges provided to the internal voltage are regulated according to a voltage level of the external voltage.

Abstract: In this circuit, an external voltage source is supplied or down converted in response to a normal operating mode to provide the internal voltage source of a first level to the internal circuit. The external voltage source is converted to a voltage of a second level, lower than the first level, in response to a low consumption power mode having a complementary relation with the normal mode.

Abstract: Semiconductor devices and methods of sampling data therefrom are provided in which data is sampled from a memory cell array based on a relative position of a memory cell array section that contains the data. A sense amplifier generates an output signal in response to an address of one or more cells in a memory cell array. A control circuit generates a sample control signal in response to at least a portion of the address (e.g., one or more high order bits of the address) of the one or more cells in the memory cell array. A data sampling circuit then samples the output signal of the sense amplifier in response to the sample control signal. The portion of the memory cell array address used to drive the control circuit may logically divide the memory cell array into two or more sections. The control circuit may adjust the timing of the sample control signal in accordance with the proximity of a memory cell array section to the sense amplifier.

Abstract: Output drivers preferably contain a plurality of driver circuits therein that are commonly connected to an output line to be driven and can be selectively enabled or disabled to increase or decrease drive capability, respectively. Driver circuits may include first and second control signal lines (e.g., MRS1, MRS2), a first pull-up/pull-down driver circuit having first and second data inputs, a first control input electrically coupled to the first control signal line (e.g., MRS1) and a second control input, and a second pull-up/pull-down driver circuit having first and second data inputs electrically coupled to the first and second data inputs of the first pull-up/pull-down driver circuit, respectively, a first control input electrically coupled to the second control signal line (e.g., MRS2) and a second control input. First and second complementary control signals lines (e.g.

Abstract: A semiconductor memory device having input/output sense amplifiers capable of varying gains using a column address and block selection signals. The input/output sense amplifiers can compensate for reduction of transfer rate according to distance between a selected memory block or sub memory block and the sense amplifiers. A semiconductor memory device of the present invention includes: a plurality of sub memory blocks divided by a column address in a memory block; a plurality of data input/output line pairs coupled to the sub memory blocks, for transmitting data in a selected sub memory block; and a plurality of input/output sense amplifiers for sensing and amplifying data from the data input/output line pairs, wherein each of the input/output sense amplifiers has a variable gain characteristic depending on distance between the selected sub memory block and the input/output sense amplifiers so as to minimize a difference in delay characteristic according to position of the selected sub memory block.

Abstract: Semiconductor devices and methods of sampling data therefrom are provided in which data is sampled from a memory cell array based on a relative position of a memory cell array section that contains the data. A sense amplifier generates an output signal in response to an address of one or more cells in a memory cell array. A control circuit generates a sample control signal in response to at least a portion of the address (e.g. one or more high order bits of the address) of the one or more cells in the memory cell array. A data sampling circuit then samples the output signal of the sense amplifier in response to the sample control signal. The portion of the memory cell array address used to drive the control circuit may logically divide the memory cell array into two or more sections. The control circuit may adjust the timing of the sample control signal in accordance with the proximity of a memory cell array section to the sense amplifier.

Abstract: Output drivers preferably contain a plurality of driver circuits therein that are commonly connected to an output line to be driven and can be selectively enabled or disabled to increase or decrease drive capability, respectively. Driver circuits may include first and second control signal lines (e.g., MRS1, MRS2), a first pull-up/pull-down driver circuit having first and second data inputs, a first control input electrically coupled to the first control signal line (e.g., MRS1) and a second control input, and a second pull-up/pull-down driver circuit having first and second data inputs electrically coupled to the first and second data inputs of the first pull-up/pull-down driver circuit, respectively, a first control input electrically coupled to the second control signal line (e.g., MRS2) and a second control input. First and second complementary control signals lines (e.g.

Abstract: Output drivers preferably contain a plurality of driver circuits therein that are commonly connected to an output line to be driven and can be selectively enabled or disabled to increase or decrease drive capability, respectively. Driver circuits may include first and second control signal lines (e.g., MRS1, MRS2), a first pull-up/pull-down driver circuit having first and second data inputs, a first control input electrically coupled to the first control signal line (e.g., MRS1) and a second control input, and a second pull-up/pull-down driver circuit having first and second data inputs electrically coupled to the first and second data inputs of the first pull-up/pull-down driver circuit, respectively, a first control input electrically coupled to the second control signal line (e.g., MRS2) and a second control input. First and second complementary control signals lines (e.g.

Abstract: A circuit for generating an internal source voltage signal responsive to an external source voltage signal in a semiconductor memory device prevents malfunction and extends the lifetime of the device by clamping the internal source signal if the device is in a normal operating mode when the external source signal is in a stress operating range. When the device is placed in a test mode, the circuit allows the internal source signal to increase in proportion to the level of the external source signal when the external source signal is in a stress operating range. The circuit includes in internal source voltage generator, which always clamps the internal source signal when the external source signal is in a normal operating range, and a pull-up unit which is activated in response to a control signal. The control signal is enabled when the device is placed in a test mode by combining external timing signals.