Abstract: The apparatus for detecting arc occurred in chamber for plasma treatment used for manufacturing semiconductor or LCD panel comprises, a sensor module for sensing the arc; a processor module for processing data from the sensor module; wherein the sensor module includes RGB color sensor for sensing color data of the arc occurred in the chamber, the RGB color sensor is a sensor sensable at least one of red color or green color or blue color of the arc, the apparatus detects the arc by sensing data of color and chroma and brightness of the arc.

Abstract: An apparatus for detecting arc that can monitor inside of process chamber sensitively and promptly can be provided, and abnormal condition of plasma in process chamber can be detected. And, by installing RGB sensor portion independently or installing the RGB sensor portion in master board, flexibility in configuration can be provided.

Abstract: The apparatus for detecting arc occurred in chamber for plasma treatment used for manufacturing semiconductor or LCD panel comprises, a sensor module for sensing the arc; a processor module for processing data from the sensor module; wherein the sensor module includes RGB color sensor for sensing color data of the arc occurred in the chamber, the RGB color sensor is a sensor sensable at least one of red color or green color or blue color of the arc, the apparatus detects the arc by sensing data of color and chroma and brightness of the arc.

Abstract: Copper pillar tin bump on semiconductor chip comprises a copper layer composed on chip and a tin layer entirely wrapping whole outer surface of said copper layer. A method for forming of the copper pillar tin bump on semiconductor chip comprises: composing the first copper layer on said chip; applying photoresist to said first copper layer, exposing and developing a part of said photoresist, composing the copper pillar layer at the developed part of photoresist, composing the upper tin layer, removing said photoresist, removing said the first copper layer except disposing place of copper pillar layer, composing side tin layer. The minute pattern makes it possible to form a high density packaging by reducing a pitch of copper pillar tin bump. Signal delay can be reduced by low electric resistance, and underfill can be easily soaked.

Abstract: Copper pillar tin bump on semiconductor chip comprises a copper layer composed on chip and a tin layer entirely wrapping whole outer surface of said copper layer. A method for forming of the copper pillar tin bump on semiconductor chip comprises: composing the first copper layer on said chip; applying photoresist to said first copper layer, exposing and developing a part of said photoresist, composing the copper pillar layer at the developed part of photoresist, composing the upper tin layer, removing said photoresist, removing said the first copper layer except disposing place of copper pillar layer, composing side tin layer. The minute pattern makes it possible to form a high density packaging by reducing a pitch of copper pillar tin bump. Signal delay can be reduced by low electric resistance, and underfill can be easily soaked.