Patents by Inventor Sang Jung Kang
Sang Jung Kang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240170721Abstract: The present invention relates to an electrolyte solution and a secondary battery including the same. According to the present invention, the present invention has an effect of providing a secondary battery having improved charging efficiency and output due to low discharge resistance and having a long lifespan and excellent high-temperature capacity retention by suppressing gas generation and increase in thickness.Type: ApplicationFiled: January 21, 2022Publication date: May 23, 2024Inventors: Min Jung JANG, Min Goo KIM, Young Rok LIM, Ji Young CHOI, Sang Ho LEE, Wan Chul KANG, Jong Cheol YUN, Ji Seong HAN, Hee Jeong RYU, Jae Won CHUNG
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Publication number: 20240162193Abstract: Disclosed are semiconductor packages and their fabrication methods. The semiconductor package comprises a first semiconductor chip, a lower adhesion layer on the first semiconductor chip, a second semiconductor chip on the lower adhesion layer, an upper adhesion layer on the second semiconductor chip, and a third semiconductor chip on the upper adhesion layer. The lower adhesion layer includes a first cutting surface connected to a top surface of the lower adhesion layer. The upper adhesion layer is in contact with the first cutting surface of the lower adhesion layer.Type: ApplicationFiled: June 25, 2023Publication date: May 16, 2024Inventors: Seongyo KIM, UN-BYOUNG KANG, SANG-SICK PARK, Hanmin LEE, Seungyoon JUNG
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Publication number: 20240140822Abstract: A water purifier is provided. A water purifier according to one aspect of the present invention may include a housing having a first accommodation space therein, and made of a paper material; a water purifier faucet disposed in the first accommodation space to receive raw water and discharge purified water; and a filter coupled to the water purifier faucet to generate the purified water by filtering the raw water, wherein the water purifier faucet includes a base frame having a second accommodation space therein in which the filter is accommodated; a water inlet module provided on one side of the base frame to supply raw water introduced from the outside to the filter; and a water outlet module provided on the other side of the base frame to receive the purified water generated by the filter and discharge it to the outside.Type: ApplicationFiled: October 27, 2023Publication date: May 2, 2024Applicant: COWAY Co., Ltd.Inventors: Eui Hwan LEE, Chan Jung PARK, Jun HER, Myeong Hoon KANG, Gyeong Cheol SIN, Sang Gu SIM
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Publication number: 20240128510Abstract: The present invention relates to a novel electrolyte and a secondary battery including the same. The present invention has an effect of providing a secondary battery having improved charging efficiency and output due to reduced charging resistance and having excellent long-term lifespan and high-temperature capacity retention rate.Type: ApplicationFiled: December 24, 2021Publication date: April 18, 2024Inventors: Ji Young CHOI, Min Goo KIM, Sang Ho LEE, Wan Chul KANG, Jong Cheol YUN, Ji Seong HAN, Min Jung JANG
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Publication number: 20240125893Abstract: The present disclosure provides a radar apparatus capable of suppressing a radar-to-radar in-band interference caused by a signal derived from another radar apparatus in a radar system in which a plurality of radar apparatuses share frequency resource to increase a frequency utilization efficiency. The radar apparatus includes: a receiver configured to acquire a received signal; a plurality of matched filters arranged in parallel to filter the receive signal, each corresponding to respective one of the plurality of radar apparatus to use a transmit signal of a corresponding radar apparatus as a reference signal; and a signal reconstructor configured to select a matched filter most adequate for an interference suppression based on outputs of the plurality of matched filters, subtract the reference signal of a selected matched filter at least partially from the receive signal, and reconstruct a desired echo signal to be used to determine a target.Type: ApplicationFiled: December 9, 2022Publication date: April 18, 2024Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTEInventors: Hyung Jung KIM, Min Soo KANG, Sang In CHO
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Patent number: 11944661Abstract: The present invention provides a pharmaceutical composition for prevention or treatment of a stress disease and depression, the pharmaceutical composition be safely useable without toxicity and side effects by using an extract of leaves of Vaccinium bracteatum Thunb., which is natural resource of Korea, so that the reduction of manufacturing and production costs and the import substitution and export effects can be expected through the replacement of a raw material for preparation with a plant inhabiting in nature.Type: GrantFiled: February 7, 2018Date of Patent: April 2, 2024Assignee: JEONNAM BIOINDUSTRY FOUNDATIONInventors: Chul Yung Choi, Dool Ri Oh, Yu Jin Kim, Eun Jin Choi, Hyun Mi Lee, Dong Hyuck Bae, Kyo Nyeo Oh, Myung-A Jung, Ji Ae Hong, Kwang Su Kim, Hu Won Kang, Jae Yong Kim, Sang O Pan, Sung Yoon Park, Rack Seon Seong
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Publication number: 20240105991Abstract: The present invention relates to an electrolyte solution and a secondary battery including the same. According to the present invention, the present invention has an effect of providing a secondary battery having improved charging efficiency and output due to low discharge resistance and having a long lifespan and excellent high-temperature capacity retention by suppressing gas generation and increase in thickness.Type: ApplicationFiled: January 21, 2022Publication date: March 28, 2024Inventors: Min Jung JANG, Min Goo KIM, Young Rok LIM, Ji Young CHOI, Sang Ho LEE, Wan Chul KANG, Jong Cheol YUN, Ji Seong HAN, Hee Jeong RYU, Jae Won CHUNG
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Publication number: 20240105679Abstract: Disclosed are semiconductor packages and their fabrication methods. The semiconductor package comprises providing a semiconductor substrate, forming a semiconductor element on an active surface of the semiconductor substrate, forming in the semiconductor substrate through vias that extend from the active surface into the semiconductor substrate, forming a first pad layer on the active surface of the semiconductor substrate, performing a first planarization process on the first pad layer, performing on an inactive surface of the semiconductor substrate a thinning process to expose the through vias, forming a second pad layer on the inactive surface of the semiconductor substrate, performing a second planarization process on the second pad layer, and after the second planarization process, performing a third planarization process on the first pad layer.Type: ApplicationFiled: April 14, 2023Publication date: March 28, 2024Inventors: YOUNG KUN JEE, SANGHOON LEE, UN-BYOUNG KANG, SANG CHEON PARK, JUMYONG PARK, HYUNCHUL JUNG
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Publication number: 20240097190Abstract: The present invention relates to an electrolyte solution and a secondary battery including the same. According to the present invention, the present invention has an effect of providing a secondary battery having improved charging efficiency and output due to low discharge resistance and having a long lifespan and excellent high-temperature capacity retention by suppressing gas generation and increase in thickness.Type: ApplicationFiled: January 21, 2022Publication date: March 21, 2024Inventors: Min Jung JANG, Min Goo KIM, Young Rok LIM, Ji Young CHOI, Sang Ho LEE, Wan Chul KANG, Jong Cheol YUN, Ji Seong HAN, Hee Jeong RYU, Jae Won CHUNG
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Publication number: 20240097188Abstract: The present invention relates to an electrolyte solution and a secondary battery including the same. According to the present invention, the present invention has an effect of providing a secondary battery having improved charging efficiency and output due to low discharge resistance and having a long lifespan and excellent high-temperature capacity retention by suppressing gas generation and increase in thickness.Type: ApplicationFiled: January 21, 2022Publication date: March 21, 2024Inventors: Min Jung JANG, Min Goo KIM, Young Rok LIM, Ji Young CHOI, Sang Ho LEE, Wan Chul KANG, Jong Cheol YUN, Ji Seong HAN, Hee Jeong RYU, Jae Won CHUNG
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Publication number: 20240097189Abstract: The present invention relates to an electrolyte solution and a secondary battery including the same. According to the present invention, the present invention has an effect of providing a secondary battery having improved charging efficiency and output due to low discharge resistance and having a long lifespan and excellent high-temperature capacity retention by suppressing gas generation and increase in thickness.Type: ApplicationFiled: January 21, 2022Publication date: March 21, 2024Inventors: Min Jung JANG, Min Goo KIM, Young Rok LIM, Ji Young CHOI, Sang Ho LEE, Wan Chul KANG, Jong Cheol YUN, Ji Seong HAN, Hee Jeong RYU, Jae Won CHUNG
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Patent number: 11569237Abstract: A semiconductor device includes a substrate including NMOS and PMOS regions; first and second active patterns on the NMOS region; third and fourth active patterns on the PMOS region, the third active pattern being spaced apart from the first active pattern; a first dummy gate structure on the first and third active patterns; a second dummy gate structure on the second and fourth active patterns; a normal gate structure on the third active pattern; a first source/drain pattern on the third active pattern and between the normal gate structure and the first dummy gate structure; and a first element separation structure between the first and second dummy gate structures and separating the third and fourth active patterns, wherein the first dummy gate structure includes a first dummy insulation gate intersecting the third active pattern.Type: GrantFiled: January 6, 2022Date of Patent: January 31, 2023Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Ju Youn Kim, Sang Jung Kang, Ji Su Kang, Yun Sang Shin
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Patent number: 11476341Abstract: A semiconductor device is provided.Type: GrantFiled: November 27, 2020Date of Patent: October 18, 2022Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Ju Youn Kim, Sang Jung Kang, Jin Woo Kim, Seul Gi Yun
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Patent number: 11462613Abstract: A semiconductor device includes first to sixth active patterns extending in a first direction and spaced apart in the first direction and a second direction; a field insulating layer between the first and second active patterns, an upper surface thereof being lower than upper surfaces of the first and second active patterns; a first gate structure on the field insulating layer and the first active pattern and extending in the second direction; a second gate structure on the field insulating layer and the second active pattern and extending in the second direction; a first separation trench extending between the second and third active patterns and the fifth and sixth active patterns, and a second separation trench extending between the first and second gate structures, wherein a lowest surface of the first separation trench is higher than a lowest surface of the second separation trench.Type: GrantFiled: September 25, 2020Date of Patent: October 4, 2022Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Ju Youn Kim, Sang Jung Kang, Ji Su Kang, Yun Sang Shin
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Publication number: 20220130827Abstract: A semiconductor device includes a substrate including NMOS and PMOS regions; first and second active patterns on the NMOS region; third and fourth active patterns on the PMOS region, the third active pattern being spaced apart from the first active pattern; a first dummy gate structure on the first and third active patterns; a second dummy gate structure on the second and fourth active patterns; a normal gate structure on the third active pattern; a first source/drain pattern on the third active pattern and between the normal gate structure and the first dummy gate structure; and a first element separation structure between the first and second dummy gate structures and separating the third and fourth active patterns, wherein the first dummy gate structure includes a first dummy insulation gate intersecting the third active pattern.Type: ApplicationFiled: January 6, 2022Publication date: April 28, 2022Inventors: Ju Youn KIM, Sang Jung KANG, Ji Su KANG, Yun Sang SHIN
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Patent number: 11222894Abstract: A semiconductor device includes a substrate including NMOS and PMOS regions; first and second active patterns on the NMOS region; third and fourth active patterns on the PMOS region, the third active pattern being spaced apart from the first active pattern; a first dummy gate structure on the first and third active patterns; a second dummy gate structure on the second and fourth active patterns; a normal gate structure on the third active pattern; a first source/drain pattern on the third active pattern and between the normal gate structure and the first dummy gate structure; and a first element separation structure between the first and second dummy gate structures and separating the third and fourth active patterns, wherein the first dummy gate structure includes a first dummy insulation gate intersecting the third active pattern.Type: GrantFiled: September 25, 2020Date of Patent: January 11, 2022Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Ju Youn Kim, Sang Jung Kang, Ji Su Kang, Yun Sang Shin
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Publication number: 20210328030Abstract: A semiconductor device is provided.Type: ApplicationFiled: November 27, 2020Publication date: October 21, 2021Inventors: Ju Youn KIM, Sang Jung KANG, Jin Woo KIM, Seul Gi YUN
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Publication number: 20210327876Abstract: A semiconductor device includes a substrate including NMOS and PMOS regions; first and second active patterns on the NMOS region; third and fourth active patterns on the PMOS region, the third active pattern being spaced apart from the first active pattern; a first dummy gate structure on the first and third active patterns; a second dummy gate structure on the second and fourth active patterns; a normal gate structure on the third active pattern; a first source/drain pattern on the third active pattern and between the normal gate structure and the first dummy gate structure; and a first element separation structure between the first and second dummy gate structures and separating the third and fourth active patterns, wherein the first dummy gate structure includes a first dummy insulation gate intersecting the third active pattern.Type: ApplicationFiled: September 25, 2020Publication date: October 21, 2021Inventors: Ju Youn KIM, Sang Jung KANG, Ji Su KANG, Yun Sang SHIN
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Publication number: 20210328010Abstract: A semiconductor device includes first to sixth active patterns extending in a first direction and spaced apart in the first direction and a second direction; a field insulating layer between the first and second active patterns, an upper surface thereof being lower than upper surfaces of the first and second active patterns; a first gate structure on the field insulating layer and the first active pattern and extending in the second direction; a second gate structure on the field insulating layer and the second active pattern and extending in the second direction; a first separation trench extending between the second and third active patterns and the fifth and sixth active patterns, and a second separation trench extending between the first and second gate structures, wherein a lowest surface of the first separation trench is higher than a lowest surface of the second separation trench.Type: ApplicationFiled: September 25, 2020Publication date: October 21, 2021Inventors: Ju Youn KIM, Sang Jung KANG, Ji Su KANG, Yun Sang SHIN
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Patent number: 10177144Abstract: A semiconductor device includes at least one first gate structure and at least one second gate structure on a semiconductor substrate. The at least one first gate structure has a flat upper surface extending in a first direction and a first width in a second direction perpendicular to the first direction. The at least one second gate structure has a convex upper surface extending in the first direction and a second width in the second direction, the second width being greater than the first width.Type: GrantFiled: March 3, 2017Date of Patent: January 8, 2019Assignee: Samsung Electronics Co., Ltd.Inventors: Ju-youn Kim, Sang-jung Kang, Ji-hwan An