Patents by Inventor Sang-keun HAN
Sang-keun HAN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240182996Abstract: The present invention relates to: a steel material for hot forming, used for a vehicle and the like; a hot-formed member; and a method for manufacturing same. In the method, when the formed steel material is skin pass rolled, rolling pressure and roughness of skin pass rolling rolls are controlled so that bendability can be improved.Type: ApplicationFiled: August 12, 2022Publication date: June 6, 2024Applicant: POSCO CO., LTDInventors: Sea-Woong Lee, Jin-Keun Oh, Seong-Woo Kim, Sang-Heon Kim, Hyo-Sik Chun, Sang-Bin Han
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Patent number: 11993825Abstract: The present invention pertains to a hot press forming member having excellent resistance to hydrogen embrittlement, and a method for manufacturing same. An aspect of the present invention provides a hot press forming member having excellent resistance to hydrogen embrittlement, the hot press forming member comprising a base steel plate and an alloy-plated layer formed on the surface of the base steel plate, wherein the alloy-plated layer contains pores such that pores having a size of 5 ?m or less constitute 3-30% of the surface area of the alloy-plated layer as viewed in a cross-section taken in the thickness direction of the member.Type: GrantFiled: December 2, 2019Date of Patent: May 28, 2024Assignee: POSCO CO., LTDInventors: Seong-Woo Kim, Jin-Keun Oh, Sang-Heon Kim, Sang-Bin Han
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Publication number: 20240079529Abstract: A light-emitting element includes a first semiconductor layer, a light-emitting layer disposed on the first semiconductor layer, a second semiconductor layer disposed on the light-emitting layer, a device electrode layer disposed on the second semiconductor layer, a reflective electrode layer disposed on the device electrode layer, an insulating film surrounding a side surface of the light-emitting layer, a side surface of the second semiconductor layer, and a side surface of the device electrode layer, and a reflective layer surrounding a side surface of the insulating film, wherein the side surface of the device electrode layer is aligned with a side surface of the reflective electrode layer.Type: ApplicationFiled: April 10, 2023Publication date: March 7, 2024Applicant: Samsung Display Co., LTD.Inventors: Ji Hyun HAM, Moon Jung AN, Jin Seok PARK, Hee Keun LEE, Sung Chan JO, Sang Wook HAN
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Patent number: 11826441Abstract: Provided is a cleansing foam cosmetic composition comprising amino acid-based surfactants, and more particularly to a cleansing foam cosmetic composition in which a nonionic or amphiprotic surfactant is not used, and which comprises amino acid-based surfactants consisting of only sodium lauroyl glutamate, sodium cocoyl glycinate, and potassium cocoyl glycinate.Type: GrantFiled: June 23, 2022Date of Patent: November 28, 2023Assignees: KOLMAR KOREA CO., LTD., SHINSEGAE INTERNATIONAL INC.Inventors: Yan Sun, Min Kyung Kim, Young Seok Kim, Yi Soo Bae, Jun Oh Kim, Sang Keun Han, So Yoon Baek, Kang Tae Lee, So Hyeon Mok
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Patent number: 11710518Abstract: A sense amplifier includes a sense amplifying unit, first and second isolation units, and first and second offset cancellation unit. The sense amplifying unit includes a first P-type metal-oxide-semiconductor (PMOS) transistor, a second PMOS transistor, a first N-type metal-oxide-semiconductor (NMOS) transistor, and a second NMOS transistor. In a layout of the sense amplifier, the first and second PMOS transistors are disposed in a central region of the sense amplifier, the first and second NMOS transistors are disposed at opposite sides of the sense amplifier from each other, the first isolation unit and the first offset cancellation unit are disposed between the first PMOS transistor and the first NMOS transistor, and the second isolation unit and the second offset cancellation unit are disposed between the second PMOS transistor and the second NMOS transistor. In other layouts, the locations of the PMOS transistors and NMOS transistors may be reversed.Type: GrantFiled: May 17, 2021Date of Patent: July 25, 2023Assignee: Samsung Electronics Co., Ltd.Inventors: Young-Wook Kim, Hyuk-Joon Kwon, Sang-Keun Han, Bok-Yeon Won
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Publication number: 20230000732Abstract: Provided is a cleansing foam cosmetic composition comprising amino acid-based surfactants, and more particularly to a cleansing foam cosmetic composition in which a nonionic or amphiprotic surfactant is not used, and which comprises amino acid-based surfactants consisting of only sodium lauroyl glutamate, sodium cocoyl glycinate, and potassium cocoyl glycinate.Type: ApplicationFiled: June 23, 2022Publication date: January 5, 2023Inventors: YAN SUN, MIN KYUNG KIM, YOUNG SEOK KIM, YI SOO BAE, JUN OH KIM, SANG KEUN HAN, SO YOON BAEK, KANG TAE LEE, SO HYEON MOK
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Publication number: 20220409513Abstract: A cosmetic composition for peel-off-type packs includes a thickener so that pearl or powder particles are stabilized in a formulation to thus impart a sophisticated and differentiated appearance. The content of an alcohol ingredient therein is controlled to accelerate drying, which maximizes a lifting effect. Silicone, imparting a feeling of conditioning, is introduced into polyvinyl alcohol and polyvinyl pyrrolidone, which are film formers, thus minimizing skin irritation upon peeling off.Type: ApplicationFiled: September 7, 2022Publication date: December 29, 2022Inventors: Jeong Mi LEE, Sang Keun HAN, Hyeong CHOI, Sung Won LEE
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Publication number: 20220117862Abstract: The present invention relates to a capsule coloration cosmetic composition in which, when in use, the color of capsules is changed. The present invention provides a capsule coloration cosmetic composition comprising: a first formulation comprising capsules; and a second formulation comprising a colored oil-soluble ingredient, wherein the outer membranes of the capsules comprise a mixed gum comprising: acacia gum; and at least one of gelatin and agar, and wherein an oil-based emollient is included inside the capsules.Type: ApplicationFiled: June 21, 2019Publication date: April 21, 2022Applicant: KOLMAR KOREA CO., LTD.Inventors: Sun Haeng JANG, Sang Keun HAN
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Patent number: 11242366Abstract: According to aspects of the present invention, a peptide with any one sequence of SEQ ID NOS:1 to 3 exhibits high selective binding affinity to a target and the microcapsule has superior physicochemical stability. Therefore, the cosmetic composition containing the microcapsule linked to the peptide manifests high delivery efficiency of an active ingredient included in the capsule to target cells, thereby exhibiting superior skin-condition improvement effects.Type: GrantFiled: January 19, 2018Date of Patent: February 8, 2022Assignee: KOLMAR KOREA CO., LTD.Inventors: Sang Keun Han, Hyun Sook Lee, Eun Ah Kim, Seung Min Hyun, Hyeong Choi, So Yoon Baek, Jae Hwa Hong, Chae Mi Lim, Da Jeong Bak, Hye Jin Jo, Hak Sung Lee, Ji Hun Park, Eun Young Lee
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Publication number: 20210272618Abstract: A sense amplifier includes a sense amplifying unit, first and second isolation units, and first and second offset cancellation unit. The sense amplifying unit includes a first P-type metal-oxide-semiconductor (PMOS) transistor, a second PMOS transistor, a first N-type metal-oxide-semiconductor (NMOS) transistor, and a second NMOS transistor. In a layout of the sense amplifier, the first and second PMOS transistors are disposed in a central region of the sense amplifier, the first and second NMOS transistors are disposed at opposite sides of the sense amplifier from each other, the first isolation unit and the first offset cancellation unit are disposed between the first PMOS transistor and the first NMOS transistor, and the second isolation unit and the second offset cancellation unit are disposed between the second PMOS transistor and the second NMOS transistor. In other layouts, the locations of the PMOS transistors and NMOS transistors may be reversed.Type: ApplicationFiled: May 17, 2021Publication date: September 2, 2021Inventors: YOUNG-WOOK KIM, HYUK-JOON KWON, SANG-KEUN HAN, BOK-YEON WON
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Patent number: 11043257Abstract: A sense amplifier includes a sense amplifying unit, first and second isolation units, and first and second offset cancellation unit. The sense amplifying unit includes a first P-type metal-oxide-semiconductor (PMOS) transistor, a second PMOS transistor, a first N-type metal-oxide-semiconductor (NMOS) transistor, and a second NMOS transistor. In a layout of the sense amplifier, the first and second PMOS transistors are disposed in a central region of the sense amplifier, the first and second NMOS transistors are disposed at opposite sides of the sense amplifier from each other, the first isolation unit and the first offset cancellation unit are disposed between the first PMOS transistor and the first NMOS transistor, and the second isolation unit and the second offset cancellation unit are disposed between the second PMOS transistor and the second NMOS transistor. In other layouts, the locations of the PMOS transistors and NMOS transistors may be reversed.Type: GrantFiled: August 10, 2020Date of Patent: June 22, 2021Assignee: Samsung Electronics Co., Ltd.Inventors: Young-Wook Kim, Hyuk-Joon Kwon, Sang-Keun Han, Bok-Yeon Won
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Publication number: 20200372948Abstract: A sense amplifier includes a sense amplifying unit, first and second isolation units, and first and second offset cancellation unit. The sense amplifying unit includes a first P-type metal-oxide-semiconductor (PMOS) transistor, a second PMOS transistor, a first N-type metal-oxide-semiconductor (NMOS) transistor, and a second NMOS transistor. In a layout of the sense amplifier, the first and second PMOS transistors are disposed in a central region of the sense amplifier, the first and second NMOS transistors are disposed at opposite sides of the sense amplifier from each other, the first isolation unit and the first offset cancellation unit are disposed between the first PMOS transistor and the first NMOS transistor, and the second isolation unit and the second offset cancellation unit are disposed between the second PMOS transistor and the second NMOS transistor. In other layouts, the locations of the PMOS transistors and NMOS transistors may be reversed.Type: ApplicationFiled: August 10, 2020Publication date: November 26, 2020Inventors: YOUNG-WOOK KIM, HYUK-JOON KWON, SANG-KEUN HAN, BOK-YEON WON
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Patent number: 10803925Abstract: A sense amplifier includes a sense amplifying unit, first and second isolation units, and first and second offset cancellation unit. The sense amplifying unit includes a first P-type metal-oxide-semiconductor (PMOS) transistor, a second PMOS transistor, a first N-type metal-oxide-semiconductor (NMOS) transistor, and a second NMOS transistor. In a layout of the sense amplifier, the first and second PMOS transistors are disposed in a central region of the sense amplifier, the first and second NMOS transistors are disposed at opposite sides of the sense amplifier from each other, the first isolation unit and the first offset cancellation unit are disposed between the first PMOS transistor and the first NMOS transistor, and the second isolation unit and the second offset cancellation unit are disposed between the second PMOS transistor and the second NMOS transistor. In other layouts, the locations of the PMOS transistors and NMOS transistors may be reversed.Type: GrantFiled: March 25, 2020Date of Patent: October 13, 2020Assignee: Samsung Electronics Co., Ltd.Inventors: Young-Wook Kim, Hyuk-Joon Kwon, Sang-Keun Han, Bok-Yeon Won
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Publication number: 20200227111Abstract: A sense amplifier includes a sense amplifying unit, first and second isolation units, and first and second offset cancellation unit. The sense amplifying unit includes a first P-type metal-oxide-semiconductor (PMOS) transistor, a second PMOS transistor, a first N-type metal-oxide-semiconductor (NMOS) transistor, and a second NMOS transistor. In a layout of the sense amplifier, the first and second PMOS transistors are disposed in a central region of the sense amplifier, the first and second NMOS transistors are disposed at opposite sides of the sense amplifier from each other, the first isolation unit and the first offset cancellation unit are disposed between the first PMOS transistor and the first NMOS transistor, and the second isolation unit and the second offset cancellation unit are disposed between the second PMOS transistor and the second NMOS transistor. In other layouts, the locations of the PMOS transistors and NMOS transistors may be reversed.Type: ApplicationFiled: March 25, 2020Publication date: July 16, 2020Inventors: YOUNG-WOOK KIM, HYUK-JOON KWON, SANG-KEUN HAN, BOK-YEON WON
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Patent number: 10692565Abstract: A sense amplifier includes a sense amplifying unit, first and second isolation units, and first and second offset cancellation unit. The sense amplifying unit includes a first P-type metal-oxide-semiconductor (PMOS) transistor, a second PMOS transistor, a first N-type metal-oxide-semiconductor (NMOS) transistor, and a second NMOS transistor. In a layout of the sense amplifier, the first and second PMOS transistors are disposed in a central region of the sense amplifier, the first and second NMOS transistors are disposed at opposite sides of the sense amplifier from each other, the first isolation unit and the first offset cancellation unit are disposed between the first PMOS transistor and the first NMOS transistor, and the second isolation unit and the second offset cancellation unit are disposed between the second PMOS transistor and the second NMOS transistor. In other layouts, the locations of the PMOS transistors and NMOS transistors may be reversed.Type: GrantFiled: December 9, 2019Date of Patent: June 23, 2020Assignee: Samsung Electronics Co., Ltd.Inventors: Young-Wook Kim, Hyuk-Joon Kwon, Sang-Keun Han, Bok-Yeon Won
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Publication number: 20200190143Abstract: According to aspects of the present invention, a peptide with any one sequence of SEQ ID NOS:1 to 3 exhibits high selective binding affinity to a target and the microcapsule has superior physicochemical stability. Therefore, the cosmetic composition containing the microcapsule linked to the peptide manifests high delivery efficiency of an active ingredient included in the capsule to target cells, thereby exhibiting superior skin-condition improvement effects.Type: ApplicationFiled: January 19, 2018Publication date: June 18, 2020Inventors: Sang Keun HAN, Hyun Sook LEE, Eun Ah KIM, Seung Min HYUN, Hyeong CHOI, So Yoon BAEK, Jae Hwa HONG, Chae Mi LIM, Da Jeong BAK, Hye Jin JO, Hak Sung LEE, Ji Hun PARK, Eun Young LEE
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Publication number: 20200118614Abstract: A sense amplifier includes a sense amplifying unit, first and second isolation units, and first and second offset cancellation unit. The sense amplifying unit includes a first P-type metal-oxide-semiconductor (PMOS) transistor, a second PMOS transistor, a first N-type metal-oxide-semiconductor (NMOS) transistor, and a second NMOS transistor. In a layout of the sense amplifier, the first and second PMOS transistors are disposed in a central region of the sense amplifier, the first and second NMOS transistors are disposed at opposite sides of the sense amplifier from each other, the first isolation unit and the first offset cancellation unit are disposed between the first PMOS transistor and the first NMOS transistor, and the second isolation unit and the second offset cancellation unit are disposed between the second PMOS transistor and the second NMOS transistor. In other layouts, the locations of the PMOS transistors and NMOS transistors may be reversed.Type: ApplicationFiled: December 9, 2019Publication date: April 16, 2020Inventors: YOUNG-WOOK KIM, HYUK-JOON KWON, SANG-KEUN HAN, BOK-YEON WON
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Patent number: 10541022Abstract: A sense amplifier includes a sense amplifying unit, first and second isolation units, and first and second offset cancellation unit. The sense amplifying unit includes a first P-type metal-oxide-semiconductor (PMOS) transistor, a second PMOS transistor, a first N-type metal-oxide-semiconductor (NMOS) transistor, and a second NMOS transistor. In a layout of the sense amplifier, the first and second PMOS transistors are disposed in a central region of the sense amplifier, the first and second NMOS transistors are disposed at opposite sides of the sense amplifier from each other, the first isolation unit and the first offset cancellation unit are disposed between the first PMOS transistor and the first NMOS transistor, and the second isolation unit and the second offset cancellation unit are disposed between the second PMOS transistor and the second NMOS transistor. In other layouts, the locations of the PMOS transistors and NMOS transistors may be reversed.Type: GrantFiled: January 24, 2019Date of Patent: January 21, 2020Assignee: Samsung Electronics Co., Ltd.Inventors: Young-Wook Kim, Hyuk-Joon Kwon, Sang-Keun Han, Bok-Yeon Won
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Publication number: 20190180811Abstract: A sense amplifier includes a sense amplifying unit, first and second isolation units, and first and second offset cancellation unit. The sense amplifying unit includes a first P-type metal-oxide-semiconductor (PMOS) transistor, a second PMOS transistor, a first N-type metal-oxide-semiconductor (NMOS) transistor, and a second NMOS transistor. In a layout of the sense amplifier, the first and second PMOS transistors are disposed in a central region of the sense amplifier, the first and second NMOS transistors are disposed at opposite sides of the sense amplifier from each other, the first isolation unit and the first offset cancellation unit are disposed between the first PMOS transistor and the first NMOS transistor, and the second isolation unit and the second offset cancellation unit are disposed between the second PMOS transistor and the second NMOS transistor. In other layouts, the locations of the PMOS transistors and NMOS transistors may be reversed.Type: ApplicationFiled: January 24, 2019Publication date: June 13, 2019Inventors: YOUNG-WOOK KIM, HYUK-JOON KWON, SANG-KEUN HAN, BOK-YEON WON
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Patent number: 10262935Abstract: A memory device including a memory cell array region, includes, column selection signal lines formed in a first column conduction layer of the memory cell array region and extending in a column direction, global input-output data lines formed in a second column conduction layer of the memory cell array region different from the first column conduction layer and extending in the column direction and power lines formed in a shield conduction layer of the memory cell array region between the first column conduction layer and the second column conduction layer. The noises in the signal lines and the power lines may be reduced and performance of the memory device may be enhanced by forming the column selection signal lines and the global input-output data lines in different column conduction layers and forming the power lines in the shield conduction layer between the column conduction layers.Type: GrantFiled: August 15, 2017Date of Patent: April 16, 2019Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Young-Ju Kim, Su-A Kim, Soo-Young Kim, Min-Woo Won, Bok-Yeon Won, Ji-Suk Kwon, Young-Ho Kim, Ji-Hak Yu, Hyun-Chul Yoon, Seok-Jae Lee, Sang-Keun Han, Woong-Dai Kang, Hyuk-Joon Kwon, Bum-Jae Lee