Abstract: An charge exchanger for changing the polarity of an ion beam includes an charge exchange member provided in the path of an ion beam, and through which the ion beam can pass, and charge conversion material coating the surface of the charge exchange member. The charge conversion material is, for example, a fine powder of particles of magnesium against which the ion beam collides. The charge exchange rate caused by such collisions is controlled based on the measured dosage of ions injected into a target or on predetermined ion injection conditions. First, a desired ion dosage is determined based on the specifics of the ion implantation to be carried out. Then, an ion beam is injected onto a wafer after having been passed through the charge exchanger. Finally, the charge exchange member is advanced at a speed which establishes an charge exchange rate that gives rise to conditions necessary for the specific ion implantation process to occur.

Abstract: A semiconductor device is manufactured by forming a thin layer over a semiconductor substrate, coating photoresist on the thin layer, forming a photoresist pattern over the semiconductor substrate, injecting ions into the photoresist pattern so as to harden the photoresist pattern, and etching the thin layer by using the hardened photoresist pattern as an etch mask. The hardened photoresist pattern has an increased etch selectivity with respect to an underlying layer, allowing the use of thinner photoresist layers and improved etching.