Abstract: A transition dichalcogenide homojunction structure may include a lower high resistance layer including a plurality of PtX2 layers and an upper low resistance layer which includes the plurality of PtX2 layers and has different thickness and number of growth layers from the lower high resistance layer. And the lower high resistance layer and the upper low resistance layer may form a homojunction. The heat transfer characteristic of the lower high resistance layer may increase by the interface induced Seebeck effect with the upper low resistance layer. The transition dichalcogenide homojunction structure may generate the interface induced Seebeck effect at the interface of the homojunction to generate a thermal voltage. Further, the transition metal dichalcogenide homojunction structure may measure the Seebeck effect of the lower high resistance layer using the upper low resistance layer without separate measurement equipment.

Abstract: A display apparatus according to a concept of the disclosure includes: a display panel configured to display an image in a front direction; a top chassis positioned in a front direction of the display panel; a bottom chassis positioned in a rear direction of the display panel; a rear cover covering a rear side of the bottom chassis; and a stand member being accommodatable in the rear cover and selectively coupled with a rear surface of the rear cover, wherein the rear cover includes an accommodating portion in which the stand member is accommodated and a coupling portion coupled with the stand member, and the stand member includes an inserting protrusion which is inserted into the accommodating portion and the coupling portion.

Abstract: A transition dichalcogenide homojunction structure may include a lower high resistance layer including a plurality of PtX2 layers and an upper low resistance layer which includes the plurality of PtX2 layers and has different thickness and number of growth layers from the lower high resistance layer. And the lower high resistance layer and the upper low resistance layer may form a homojunction. The heat transfer characteristic of the lower high resistance layer may increase by the interface induced Seebeck effect with the upper low resistance layer. The transition dichalcogenide homojunction structure may generate the interface induced Seebeck effect at the interface of the homojunction to generate a thermal voltage. Further, the transition metal dichalcogenide homojunction structure may measure the Seebeck effect of the lower high resistance layer using the upper low resistance layer without separate measurement equipment.

Abstract: Disclosed is a cluster-batch type substrate processing system. The cluster-batch type substrate processing system comprises a substrate carry-in section 1 into which a substrate 40 is carried; a substrate conveyance robot 7 to rotate about a rotation axis and perform loading/unloading of the substrate 40; and a plurality of batch type substrate processing apparatuses 9 (9a, 9b) disposed radially around the substrate conveyance robot 7.

Abstract: A method of depositing a thin film using a hafnium compound includes depositing a primary thin film and depositing a secondary thin film. The depositing of the primary thin film and the depositing of the secondary thin film are repeated once or more. The depositing of the primary thin film includes feeding a first reactive gas, purging the first reactive gas, feeding a third reactive gas, and purging the third reactive gas, and repeating the aforementioned steps a first plurality of (N) times. The feeding of the first reactive gas includes feeding a second reactive gas, purging the second reactive gas, feeding the third reactive gas, and purging the third reactive gas, and repeating the aforementioned steps a second plurality of (M) times.

Abstract: Provided is a thin film deposition reactor. The reactor includes a reactor block including a wafer block on which a wafer is mounted; a top lid for covering and sealing the reactor block; a showerhead disposed under the top lid and connected to an RF power supply unit, the showerhead having first nozzles and second nozzles that are not combined with each other; a showerhead isolation assembly having a plurality of gas curtain holes for forming a gas curtain around the wafer block, the showerhead isolation assembly for isolating the top lid from the showerhead; a top lid isolation flow line disposed on the top lid, the top lid isolation flow line having a first flow line and a second flow line that are connected to the first nozzles and the second nozzles, respectively, and are each bent at a right angle at least once.

Abstract: Provided is a method of depositing an ALD thin film. The method includes (S1) loading a wafer on a wafer block; (S2) depositing the ALD thin film on the wafer; (S3) unloading the wafer, on which the ALD thin film is deposited, from the wafer block; (S4-1) loading a dummy wafer on the wafer block; (S4-2) stabilizing the flow rates and the pressures of gases in the reactor by spraying only an inert gas or a mixture of the inert gas and a cleaning gas in the reactor; (S4-3) supplying RF power to the showerhead so as to activate the cleaning gas and mostly removing a thin film deposited on a surface of the showerhead by using the activated cleaning gas; (S4-4) unloading the dummy wafer from the wafer block; (S4-5) repeating steps 4-1 through 4-4 at least once using new dummy wafers; and (S5) purging the inside of the reactor.

Abstract: Provided is a method of depositing a thin film using a hafnium compound. In this method, the depositing (S200) of a thin film includes (S20) depositing a primary thin film and (S21) depositing a secondary thin film. Step (S200) is performed by repeating steps (S20) and (S21) once or more. Step (S20) includes (S20-1) feeding a first reactive gas, (S20-2) purging the first reactive gas, (S20-3) feeding a third reactive gas, and (S20-4) purging the third reactive gas. Step (S21) includes (S21-1) feeding a second reactive gas, (S21-2) purging the second reactive gas, (S21-3) feeding the third reactive gas, and (S21-4) purging the third reactive gas. Step (S20) is performed by repeating steps (S20-1), (S20-2), (S20-3), and (S20-4) N times, and step (S21) is performed by repeating steps (S21-1), (S21-2), (S21-3), and (S21-4) M times.