Abstract: An etching gas composition includes at least two C3 or C4 organic fluorine compounds and molybdenum fluoride, and the at least two C3 or C4 organic fluorine compounds are isomers.

Abstract: An etching gas composition includes at least two types of organofluorine compounds of carbon number C3 or carbon number C4, wherein the at least two types of organofluorine compounds are isomeric to each other.

Abstract: Provided is a substrate processing apparatus including a chamber having a processing space therein, a supporting unit arranged in the processing space, having a substrate located thereon, and including a label material layer including a label material therein, a plasma source configured to generate plasma from a processing gas in the processing space, and a measurement apparatus configured to detect the label material, wherein, when the supporting unit is etched to a depth that is greater than or equal to a first depth, the label material layer is exposed.

Abstract: An apparatus for processing a substrate may include an upper electrode, a gas distributing unit disposed under the upper electrode, a shower head disposed under the gas distributing unit, a temperature measuring unit including a first temperature sensor for measuring a temperature of the shower head, and a lower electrode disposed under the shower head. The first temperature sensor may pass through the upper electrode and the lower electrode and may make directly contact with the shower head.

Abstract: Disclosed is a substrate treating apparatus. The substrate treating apparatus includes a chuck configured to support a substrate in a treatment space of a chamber into which a process gas is supplied, and a ring assembly surrounding the chuck, and the ring assembly includes an inner ring located such that a portion of the inner ring surrounds an outer side of the substrate supported by the chuck, an outer ring located to surround the inner ring, and a driver configured to move the outer ring upwards and downwards.

Abstract: Provided is an apparatus for treating a substrate. The apparatus for treating a substrate may include a process chamber having a space formed therein, a chuck positioned in the process chamber and supporting a substrate, a gas supply unit supplying reaction gas into the process chamber, an upper electrode positioned above the chuck and applying high frequency power to the reaction gas, and a heater installed in the upper electrode and heating the upper electrode.