Patents by Inventor Sang-mock Lee

Sang-mock Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20120037221
    Abstract: A conductive paste including a conductive powder, a metallic glass, and an organic vehicle, wherein the metallic glass includes an alloy of at least two elements selected from an element having a low resistivity, an element which forms a solid solution with the conductive powder, or an element having a high oxidation potential, wherein the element having a low resistivity has a resistivity of less than about 100 microohm-centimeters, and the element having a high oxidation potential has an absolute value of a Gibbs free energy of oxide formation of about 100 kiloJoules per mole or greater.
    Type: Application
    Filed: August 12, 2011
    Publication date: February 16, 2012
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Se-Yun KIM, Eun-Sung LEE, Sang-Soo JEE, Sang-Mock LEE
  • Publication number: 20120037220
    Abstract: A conductive paste including a conductive powder, a metallic glass, and an organic vehicle, wherein the metallic glass has a resistivity that is decreased when the metallic glass is heat treated at a temperature that is higher than a glass transition temperature of the metallic glass.
    Type: Application
    Filed: August 10, 2011
    Publication date: February 16, 2012
    Applicants: INDUSTRY-ACADEMIC COOPERATION FOUNDATION, Yonsei University, SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Sang-Soo JEE, Eun-Sung LEE, Se-Yun KIM, Sang-Mock LEE, Jun Ho LEE, Do-Hyang KIM, Ka Ram LIM
  • Publication number: 20120031481
    Abstract: A conductive paste including a conductive powder, a metallic glass having a supercooled liquid region, and an organic vehicle.
    Type: Application
    Filed: January 28, 2011
    Publication date: February 9, 2012
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Sang-Soo JEE, Eun-Sung LEE, Se-Yun KIM, Sang-Mock LEE, Jung Yun WON, Do-Hyang KIM
  • Publication number: 20120024333
    Abstract: A thermoelectric material has a microstructure deformed by cryogenic impact. When the cryogenic impact is applied to the thermoelectric material, defects are induced in the thermoelectric material, and such defects increase phonon scattering, which results in enhanced figure of merit.
    Type: Application
    Filed: July 29, 2011
    Publication date: February 2, 2012
    Applicants: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA, SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Sang-mock LEE, Kyu-hyoung LEE, Sung-ho JIN
  • Publication number: 20110294039
    Abstract: A solid oxide electrolyte including an oxide represented by Formula 1: (1?a?b)(Ce1-xMaxO2-?)+a(Mb)+b(Mc)??Formula 1 wherein 0<a<0.2, 0<b<0.2, 0<x<0.5, ? is selected so that the Ce1-xMaxO2-? is electrically neutral, Ma is a rare-earth metal, Mb is an oxide, a nitride, or a carbide of aluminum (Al), silicon (Si), magnesium (Mg), or titanium (Ti), or a combination including at least one of the foregoing, and Mc is an oxide of a metal of Groups 6 through 11.
    Type: Application
    Filed: March 15, 2011
    Publication date: December 1, 2011
    Applicants: SAMSUNG ELECTRONICS CO., LTD., INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY, SAMSUNG SDI CO., LTD.
    Inventors: Sang-mock LEE, Hee-jung PARK, Yong-ho CHOA, Chan KWAK
  • Publication number: 20110247671
    Abstract: A thermoelectric material including: a bismuth-tellurium (Bi—Te)-based thermoelectric material matrix; and a nano-metal component distributed in the Bi—Te-based thermoelectric material matrix, wherein a Lotgering degree of orientation in a c-axis direction is about 0.9 to about 1.
    Type: Application
    Filed: November 24, 2010
    Publication date: October 13, 2011
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Hyun-sik KIM, Kyu-hyoung LEE, Sang-mock LEE, Eun-sung LEE, Xiangshu LI
  • Publication number: 20110240081
    Abstract: A thermoelectric material includes a compound represented by Formula 1: AaRbG3±n??Formula 1 wherein component A includes at least one element selected from a Group 1 element, a Group 2 element, and a metal of Groups 3 to 12, component R is a rare-earth element, component G includes at least one element selected from sulfur (S), selenium (Se), tellurium (Te), phosphorus (P), arsenic (As), antimony (Sb), bismuth (Bi), carbon (C), silicon (Si), germanium (Ge), tin (Sn), boron (B), aluminum (Al), gallium (Ga), and indium (In), 0<a?1, 0<b?1, and 0?n<1.
    Type: Application
    Filed: March 30, 2011
    Publication date: October 6, 2011
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jong-soo RHYEE, Sang-il KIM, Sang-mock LEE
  • Publication number: 20110240083
    Abstract: A thermoelectric material including a compound represented by Formula 1 below: (R1-aR?a)(T1-bT?b)3±y??Formula 1 wherein R and R? are different from each other, and each includes at least one element selected from a rare-earth element and a transition metal, T and T? are different from each other, and each includes at least one element selected from sulfur (S), selenium (Se), tellurium (Te), phosphorus (P), arsenic (As), antimony (Sb), bismuth (Bi), carbon (C), silicon (Si), germanium (Ge), tin (Sn), boron (B), aluminum (Al), gallium (Ga), and indium (In), 0?a?1, 0?b?1, and 0?y<1.
    Type: Application
    Filed: March 31, 2011
    Publication date: October 6, 2011
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jong-soo RHYEE, Sang-mock LEE
  • Publication number: 20110236795
    Abstract: A method of preparing a metal-doped oxide, the method including: preparing a precursor solution including a zirconium precursor or cerium precursor, a dopant metal precursor, a solvent, and a chloride salt; and heat-treating the precursor solution to prepare the metal-doped oxide.
    Type: Application
    Filed: January 20, 2011
    Publication date: September 29, 2011
    Applicants: SAMSUNG ELECTRONICS CO., LTD., SAMSUNG SDI CO., LTD.
    Inventors: Soo-yeon SEO, Hee-jung PARK, Chan KWAK, Sang-mock LEE, Dong-hee YEON
  • Publication number: 20110139208
    Abstract: A nanocomposite thermoelectric material, a thermoelectric element including the nanocomposite thermoelectric material, and a thermoelectric module including the thermoelectric element are disclosed herein. The nanocomposite thermoelectric material includes highly electrically conductive nano metallic particles that are uniformly dispersed in a thermoelectric material matrix. Thus, the nanocomposite thermoelectric material has high thermoelectric performance, and thus, may be used in a wide range of thermoelectric elements and thermoelectric modules.
    Type: Application
    Filed: July 9, 2010
    Publication date: June 16, 2011
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Kyu-hyoung LEE, Hyun-sik KIM, Sang-mock LEE, Eun-sung LEE, Sang-soo JEE
  • Patent number: 7956342
    Abstract: Insulating impurities may be uniformly distributed over an entire or partial region of the phase change material. The PRAM may include a phase change layer including the phase change material. The insulating impurity content of the phase change material may be 0.1 to 10% (inclusive) the volume of the phase change material. The insulating impurity content of the phase change material may be adjusted by controlling the power applied to a target including the insulating impurities.
    Type: Grant
    Filed: August 4, 2006
    Date of Patent: June 7, 2011
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jin-seo Noh, Yoon-ho Khang, Sang-mock Lee, Dong-seok Suh
  • Publication number: 20110100409
    Abstract: A thermoelectric nano-composite including a thermoelectric matrix; a nano-metal particle; and a nano-thermoelectric material represented by Formula 1: AxMyBz??Formula 1 wherein A includes at least one element of indium, bismuth, or antimony, B includes at least one element of tellurium or selenium (Se), M includes at least one element of gallium, thallium, lead, rubidium, sodium, or lithium, x is greater than 0 and less than or equal to about 4, y is greater than 0 and less than or equal to about 4, and z is greater than 0 and less than or equal to about 3.
    Type: Application
    Filed: November 4, 2010
    Publication date: May 5, 2011
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Hyun-sik KIM, Kyu-hyoung LEE, Sang-mock LEE, Eun-sung LEE, Sang-soo JEE, Xiangshu LI
  • Publication number: 20110091794
    Abstract: A fuel electrode material including a metal oxide having a perovskite type crystalline structure and represented by Formula 1: A1-xA?xB1-yB?yO3??Formula 1 wherein A and A? are different from each other and A and A? each independently include at least one element selected from the group consisting of strontium (Sr), yttrium (Y), samarium (Sm), lanthanum (La), and calcium (Ca); B includes at least one element selected from the group consisting of titanium (Ti), manganese (Mn), cobalt (Co), iron (Fe), and nickel (Ni); B? is different from B and includes at least one transition metal; x is about 0.001 to about 0.08; and y is about 0.001 to about 0.5.
    Type: Application
    Filed: October 13, 2010
    Publication date: April 21, 2011
    Applicants: SAMSUNG ELECTRONICS CO., LTD., SAMSUNG SDI CO., LTD., INHA-INDUSTRY PARTNERSHIP INSTITUTE
    Inventors: Sang-mock LEE, Chan KWAK, Hae-jin HWANG, Jong-seol YOON, Jun LEE
  • Publication number: 20110081598
    Abstract: A solid oxide electrolyte including an oxygen ion conducting solid solution, wherein the solid solution is represented by Formula 1 below: Zr1-x-y-zMaxMbyMczO2-???Formula 1 wherein x is greater than 0 and less than about 0.3, y is greater than 0 and less than about 0.1, z is greater than 0 and less than about 0.1, ? is selected to make the solid solution ionically neutral, Ma, Mb, and Mc are each independently a metal selected from the group consisting of elements of Groups 3, Groups 5 through 13, and Group 14, and an ionic radius of each of Ma+3, Mb+3, and Mc+3 are different from each other.
    Type: Application
    Filed: September 23, 2010
    Publication date: April 7, 2011
    Applicants: SAMSUNG ELECTRONICS CO., LTD., SAMSUNG SDI CO., LTD.
    Inventors: Hee-jung PARK, Sang-mock LEE, Chan KWAK, Soo-yeon SEO, Yong-ho CHOA
  • Patent number: 7892700
    Abstract: An electrode catalyst including two or more metal components used in an anode and/or a cathode of a proton exchange membrane fuel cell (PEMFC) or a direct methanol fuel cell (DMFC), a method of preparing the same, and a fuel cell including the electrode catalyst. The electrode catalyst includes an active Pt-based metal and an inactive La-based metal. By including the inactive metal component in the electrode catalyst, in addition to the active Pt-based metal component, higher catalyst activity can be obtained, and the amount of the expensive Pt-based metal can be decreased so that the fuel cell can be produced at relatively low costs. In addition, the active Pt-based metal and the inactive La-based metal are uniformly distributed so that agglomeration of the active Pt-based metal can be blocked (or prevented) and thus the catalyst activity can be maintained constant for a relatively long period of time.
    Type: Grant
    Filed: February 9, 2007
    Date of Patent: February 22, 2011
    Assignee: Samsung SDI Co., Ltd.
    Inventor: Sang-mock Lee
  • Publication number: 20110036385
    Abstract: A thermoelectric composite including a thermoelectric material matrix, a plurality of ceramic nanoparticles, and a bipolar dispersant, wherein the bipolar dispersant bonds the ceramic nanoparticles to the thermoelectric material matrix.
    Type: Application
    Filed: August 10, 2010
    Publication date: February 17, 2011
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Kyu-hyoung LEE, Eun-sung LEE, Sang-mock LEE, Hyun-sik KIM
  • Patent number: 7872250
    Abstract: A PRAM and a fabricating method thereof are provided. The PRAM includes a transistor and a data storage capability. The data storage capability is connected to the transistor. The data storage includes a top electrode, a bottom electrode, and a porous PCM layer. The porous PCM layer is interposed between the top electrode and the bottom electrode.
    Type: Grant
    Filed: April 22, 2009
    Date of Patent: January 18, 2011
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Sang-mock Lee, Jin-heong Yim, Yoon-ho Khang, Jin-seo Noh, Dong-seok Suh
  • Patent number: 7859035
    Abstract: A storage node having a metal-insulator-metal structure, a non-volatile memory device including a storage node having a metal-insulator-metal (MIM) structure and a method of operating the same are provided. The memory device may include a switching element and a storage node connected to the switching element. The storage node may include a first metal layer, a first insulating layer and a second metal layer, sequentially stacked, and a nano-structure layer. The storage node may further include a second insulating layer and a third metal layer. The nano-structure layer, which is used as a carbon nano-structure layer, may include at least one fullerene layer.
    Type: Grant
    Filed: December 1, 2006
    Date of Patent: December 28, 2010
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Chang-wook Moon, Sang-mock Lee, In-kyeong Yoo, Seung-woon Lee, El Mostafa Bourim, Eun-hong Lee, Choong-rae Cho
  • Patent number: 7824953
    Abstract: Provided is a method of operating a phase change random access memory comprising a switching device and a storage node comprising a phase change layer. The method includes applying a reset current passing through the phase change layer from a lower portion of the phase change layer toward an upper portion of the phase change layer and being smaller than 1.6 mA to the storage node to change a portion of the phase change layer into an amorphous state. The set voltage is in an opposite direction is exemplary embodiments, and a connector is of small cross-sectional area.
    Type: Grant
    Filed: January 11, 2006
    Date of Patent: November 2, 2010
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Dong-seok Suh, Yoon-ho Khang, Sang-mock Lee, Jin-seo Noh
  • Publication number: 20100236596
    Abstract: An anisotropically elongated thermoelectric nanocomposite includes a thermoelectric material.
    Type: Application
    Filed: August 11, 2009
    Publication date: September 23, 2010
    Applicants: SAMSUNG ELECTRONICS CO., LTD., UNIVERSITY OF CALIFORNIA, SAN DIEGO
    Inventors: Sang-mock LEE, Prabhakar BANDARU, Sung-ho JIN