Abstract: According to the present invention, an image encoding apparatus comprises: a motion prediction unit which derives motion information on a current block in the form of the motion information including L0 motion information and L1 motion information; a motion compensation unit which performs a motion compensation for the current block on the basis of at least one of the L0 motion information and L1 motion information so as to generate a prediction block corresponding to the current block; and a restoration block generating unit which generates a restoration block corresponding to the current block based on the prediction block. According to the present invention, image encoding efficiency can be improved.

Abstract: A memory may include a first wafer, and a second wafer stacked on and bonded to the first wafer. The first wafer may include a cell structure including a memory cell array; and a first logic structure disposed under the cell structure, and including a row control circuit. The second wafer may include a second logic structure including a column control circuit.

Abstract: A dual compressor for a vehicle comprises a first motor, a first shaft connected to the first motor to transmit a torque of the first motor, a first compressing unit connected to the first shaft to compress a refrigerant according to the operation of the first motor, a second motor, a second shaft connected to the second motor to transmit a torque of the second motor, a second compressing unit connected to the second shaft to compress a refrigerant according to the operation of the second motor, and an inverter electrically connected to the first and second motors to drive the first and second motors by converting DC power supplied from a vehicle into AC power, and controlling the output of the first compressing unit or the second compressing unit by controlling the power applied to the first motor or the second motor.

Abstract: Provided is an electromagnetic wave generation device including a tube including an anode, a cathode and at least one gate, a first power supply circuit in which one side of an output terminal is connected to the anode, a second power supply circuit in which one side of an output terminal is connected to the gate, and a current-sensing circuit connected to the tube and sensing a current flowing through the cathode, in which the current-sensing circuit includes at least one resistance associated with the sensing of at least one of an anode current and a gate current.

Abstract: A semiconductor memory device includes: a first gate stack structure including first interlayer insulating layers and first conductive layers, which are alternately stacked in a vertical direction; a dummy vertical channel penetrating the first gate stack structure; lower vertical channels penetrating the first gate stack structure at both sides of the dummy vertical channel; a second gate stack structure including second interlayer insulating layers and second conductive layers, which are alternately stacked in the vertical direction on the first gate stack structure; a first select line isolation structure partially penetrating the second gate stack structure; upper vertical channels connected to the lower vertical channels while penetrating the second gate stack structure; and a second select line isolation structure overlapping with the dummy vertical channel in the vertical direction, the second select line isolation structure penetrating a portion of the second gate stack structure.

Abstract: There are provided a semiconductor device and a manufacturing method thereof. The semiconductor device includes: a stack structure including a plurality of conductive patterns and a plurality of interlayer insulating layers, which are alternately stacked on a substrate; a plurality of channel structures extending in a first direction substantially perpendicular to the substrate to penetrate the stack structure; at least one first slit extending in a second direction substantially horizontal to the substrate while penetrating conductive patterns for select lines among the plurality of conductive patterns; a second slit extending in the second direction while penetrating the conductive patterns for select lines; and a plurality of support structures disposed on a bottom of the second slit, the plurality of support structures penetrating conductive patterns for word lines among the plurality of conductive patterns.

Abstract: A semiconductor package includes a package substrate, at least one semiconductor chip mounted on the package substrate, and a molding member that surrounds the at least one semiconductor chip. The molding member includes fillers. Each of the fillers includes a core and a coating layer that surrounds the core. The core includes a non-electromagnetic material and the coating layer includes an electromagnetic material. The molding member includes regions respectively have different distributions of the fillers.

Abstract: A radio frequency (RF) chip package includes: an RF die; a first peripheral circuit chip; a second peripheral circuit chip; a substrate having a -shaped step formed on a portion thereof so that the RF die is mounted on top of the step of the substrate and the first peripheral circuit chip and the second peripheral circuit chip are mounted on top of the substrate where no step is formed; a first mutual inductance controller for controlling the dimension of the mutual inductance between the first peripheral circuit chip and the RF die; and a second mutual inductance controller for controlling the dimension of the mutual inductance between the second peripheral circuit chip and the RF die.

Abstract: Disclosed is an electromagnetic wave generator, comprising a tube comprising an anode, a cathode and at least one gate, a tube power supply circuit in which one side of an output terminal is connected to the anode, and the other side of the output terminal is connected to the cathode, and a gate controlling circuit in which at least one side of the output terminal is connected to the gate, wherein a first voltage value of one side of the output terminal of the tube power supply circuit and a second voltage value of the other side of the output terminal of the tube power supply circuit are different from each other with respect to a ground terminal of the tube power supply circuit.

Abstract: A semiconductor package includes a first substrate, a first semiconductor chip disposed on the first substrate, a second substrate disposed on the first semiconductor chip, a second semiconductor chip disposed on the second substrate, and a mold layer disposed between the first substrate and the second substrate. The second substrate includes a recess formed at an edge, the mold layer fills the recess, and the recess protrudes concavely inward from the edge of the second substrate toward a center of the second substrate.

Abstract: A dual compressor for a vehicle is disclosed. The dual compressor for the vehicle is provided, and comprises a first motor that operates according to whether power is applied, a first shaft connected to the first motor to transmit a torque of the first motor, a first compressing unit connected to the first shaft to compress a refrigerant according to the operation of the first motor, a second motor that operates according to whether power is applied, a second shaft connected to the second motor to transmit a torque of the second motor, a second compressing unit connected to the second shaft to compress a refrigerant according to the operation of the second motor, and an inverter electrically connected to the first and second motors, respectively, to drive the first and second motors by converting DC power supplied from a vehicle into AC power, and controlling the output of the first compressing unit or the second compressing unit by controlling the power applied to the first motor or the second motor.

Abstract: Disclosed is an electromagnetic wave generator, comprising a tube comprising an anode, a cathode and at least one gate, a tube power supply circuit in which one side of an output terminal is connected to the anode, and the other side of the output terminal is connected to the cathode, and a gate controlling circuit in which at least one side of the output terminal is connected to the gate, wherein a first voltage value of one side of the output terminal of the tube power supply circuit and a second voltage value of the other side of the output terminal of the tube power supply circuit are different from each other with respect to a ground terminal of the tube power supply circuit.

Abstract: A semiconductor package includes a first substrate, a first semiconductor chip disposed on the first substrate, a second substrate disposed on the first semiconductor chip, a second semiconductor chip disposed on the second substrate, and a mold layer disposed between the first substrate and the second substrate. The second substrate includes a recess formed at an edge, the mold layer fills the recess, and the recess protrudes concavely inward from the edge of the second substrate toward a center of the second substrate.

Abstract: A semiconductor package includes a package substrate, at least one semiconductor chip mounted on the package substrate, and a molding member that surrounds the at least one semiconductor chip. The molding member includes fillers. Each of the fillers includes a core and a coating layer that surrounds the core. The core includes a non-electromagnetic material and the coating layer includes an electromagnetic material. The molding member includes regions respectively have different distributions of the fillers.

Abstract: A semiconductor package includes a package substrate, at least one semiconductor chip mounted on the package substrate, and a molding member that surrounds the at least one semiconductor chip. The molding member includes fillers. Each of the fillers includes a core and a coating layer that surrounds the core. The core includes a non-electromagnetic material and the coating layer includes an electromagnetic material. The molding member includes regions respectively have different distributions of the fillers.

Abstract: The present invention relates to bacteria-derived extracellular vesicles having reduced toxicity and the use thereof and, more specifically, to a pharmaceutical composition for treating or diagnosing diseases, a composition for delivering materials and a vaccine composition comprising bacterial extracellular vesicles having reduced toxicity, a method for preparing same, and the like. By using the bacterial extracellular vesicles having reduced toxicity of the present invention, in vivo or in vitro side effects can be reduced, efficacies can be increased, and thus the stability and efficacies of a therapeutic agent or a diagnostic agent, for various diseases including cancer, a drug carrier and/or a vaccine carrier can be enhanced. The bacterial extracellular vesicles having reduced toxicity and having loaded materials for disease treatment or vaccine, and a method for preparing same can he used for in vitro or in vivo treatments, drug carriers, vaccines or experiments.

Abstract: A measurement device includes an emitter configured to emit an electromagnetic signal to an object to be measured. A first detector is disposed to measure a first portion of the electromagnetic signal that is reflected by the object to be measured. A second detector is disposed to measure a second portion of the electromagnetic signal that is transmitted through the object to be measured. The emitter is configured to emit the electromagnetic signal in a direction substantially perpendicular to a surface of the object to be measured.

Abstract: A method for fabricating an electronic device including a semiconductor memory may include: forming a material layer over a substrate; forming a material pattern by etching the material layer, the etching providing an etch residue on sidewalls of the material pattern; and removing the etch residue, wherein removing of the etch residue includes performing a cleaning process using a cleaning composition including water and a fluorine-containing compound or an amine, and having a pH in a range of 7 to 14.

Abstract: An apparatus and method of predicting or determining temperature for thermal cracking of a composite material. Such method includes: (1) reducing the temperature of a composite material along a range of temperatures from a first temperature to a second temperature; (2) measuring dimensional changes in the composite material at a plurality of temperature points along the range of temperatures to generate a curve related to values for the coefficient of thermal expansion for the composite material; and (3) determining the transition temperature for the composite material, the transition temperature being at the intersection of two asymptotes of the curve, wherein the transition temperature correlates to the thermal cracking temperature of the composite material.