Abstract: A method of manufacturing an Organic Light Emitting Diode (OLED). The method comprises using a solution or a solvent for removing a photo-resist used for patterning, which photo-resist is at least partly covered with a material other than photo-resist. The method of manufacturing the OLED thus comprises a lift-off process. The new method provides the benefits of low cost manufacturing and high OLED performance.

Abstract: A CMOS or bipolar based Ion Sensitive Field Effect Transistor (ISFET) comprising an ion sensitive recess for holding a liquid wherein the recess is formed at least partly on top of a gate of the transistor. There is also provided a method of manufacturing an I on Sensitive Field Effect Transistor (ISFET) utilizing CMOS processing steps, the method comprising forming an ion sensitive recess for holding a liquid at least partly on top of a gate of the transistor.

Abstract: A method of manufacturing an Organic Light Emitting Diode (OLED). A substrate (101) is provided, and a plurality of pixel electrodes (102) is formed on the substrate resulting in at least one gap (105) between two adjacent pixel electrodes. A dielectric material (103) is deposited in the gap. The resulting structure is subjected to a process which ensures that at least a portion of the surface of the pixel electrodes is not covered by the dielectric material. At least the portion of the surface of the pixel electrodes is covered with a layer of an organic compound so as to form the OLED.

Abstract: A CMOS or bipolar based Ion Sensitive Field Effect Transistor (ISFET) comprising an ion sensitive recess for holding a liquid wherein the recess is formed at least partly on top of a gate of the transistor. There is also provided a method of manufacturing an I on Sensitive Field Effect Transistor (ISFET) utilizing CMOS processing steps, the method comprising forming an ion sensitive recess for holding a liquid at least partly on top of a gate of the transistor.

Abstract: A method of manufacturing an Organic Light Emitting Diode (OLED). The method comprises using a solution or a solvent for removing a photo-resist used for patterning, which photo-resist is at least partly covered with a material other than photo-resist. The method of manufacturing the OLED thus comprises a lift-off process. The new method provides the benefits of low cost manufacturing and high OLED performance.

Abstract: A method of manufacturing an Organic Light Emitting Diode (OLED). A substrate (101) is provided, and a plurality of pixel electrodes (102) is formed on the substrate resulting in at least one gap (105) between two adjacent pixel electrodes. A dielectric material (103) is deposited in the gap. The resulting structure is subjected to a process which ensures that at least a portion of the surface of the pixel electrodes is not covered by the dielectric material. At least the portion of the surface of the pixel electrodes is covered with a layer of an organic compound so as to form the OLED.

Abstract: The present invention relates to a method for forming a multi-transmittance phase-shifting mask for the manufacture of highly integrated semiconductor devices in which portions of a plurality of light blocking layers are selectively removed to modify the transmittance of various regions of the mask and suppress undesired patterns, such as ghost images and side lobe effects to permit increased integration levels and improved yield in the production of the semiconductor devices.

Abstract: The present invention relates to a method for forming a multi-transmittance phase-shifting mask for the manufacture of highly integrated semiconductor devices in which portions of a plurality of light blocking layers are selectively removed to modify the transmittance of various regions of the mask and suppress undesired patterns, such as ghost images and side lobe effects to permit increased integration levels and improved yield in the production of the semiconductor devices.