Abstract: A display device includes a substrate; a first electrode and a second electrode disposed in an emission area and a sub-region and spaced apart from each other in a first direction; a first insulating layer disposed on the first electrode and the second electrode; light emitting elements disposed on the first insulating layer in the emission area, and including ends disposed on the first and second electrodes, respectively; and a second insulating layer disposed on the first insulating layer. The second insulating layer includes a fixing pattern; a support pattern portion; and a connection portion electrically connecting the fixing pattern and the support pattern portion, and the fixing pattern includes a first region that contacts an outer surface of the light emitting elements and a second region that does not contact the outer surface of the light emitting elements.

Abstract: Disclosed is a small animal intraventricular injection compensator for injecting a drug into a desired location through a syringe, the compensator including: a guide part provided with a guide hole into which a needle of a syringe is inserted; a body comprising an upper cavity provided inside thereof and a cradle provided to seat the guide part on an upper side thereof; and a fixation part integrally provided with the body or separately provided, and comprising a lower cavity provided to allow a head accommodation space, which a head of a small animal may enter into or exit from, to be provided inside thereof by corresponding to the upper cavity.

Abstract: A button-type secondary battery includes a lower can having a bottom surface; an upper can having a top, the upper can and the lower can being coupled to define a space therein; an electrolyte in the space; an electrode assembly in the space and including a negative electrode, a separator, and a positive electrode wound together; a gasket between the upper can and the lower can to electrically insulate the upper and lower cans; a top insulator that is electrically insulating and covering a top surface of the electrode assembly; and a bottom insulator that is electrically insulating and covering a bottom surface of the electrode assembly. The top and bottom insulators are each configured to expand in volume by absorbing the electrolyte. Surfaces of at least one of the top insulator and the bottom insulator are coated with a protective layer to prevent thermal shrinkage from occurring.

Abstract: A coil component includes: a body having a first and a second surface opposing each other, and a third and a fourth surface opposing each other and connecting the first surface and second surface; a support member disposed within the body; first and second coils disposed on the support member; first and third external electrodes disposed on the body and connected to the first coil; second and fourth external electrodes disposed on the body and connected to the second coil; a first via electrode disposed within the body and connecting the first coil and the first external electrode; and a second via electrode disposed within the body and connecting the second coil and the second external electrode, wherein the first to fourth external electrodes are disposed on the first surface, the third external electrode extends onto the third surface, and the fourth external electrode extends onto the fourth surface.

Abstract: A button type secondary battery includes a wound electrode assembly; a lower can with the electrode assembly and an electrolyte in the lower can; a top plate to close the lower can; a positive electrode terminal coupled to the top plate through a gasket to be electrically insulated from the top plate with a portion of the positive electrode terminal passing through a hole in the top plate to be bonded to a positive electrode tab; a top insulator covering a top surface of the electrode assembly; and a bottom insulator covering a bottom surface of the electrode assembly. The top insulator and the bottom insulator are each configured to expand in volume by absorbing the electrolyte. Surfaces of at least one or more of the top insulator and the bottom insulator are coated with a protective layer configured to prevent thermal shrinkage from occurring.

Abstract: A three-dimensional semiconductor integrated circuit device including an inter-die interface is provided. The device includes a top die including a plurality of micro cells provided on a top surface of the top die, a plurality of micro bumps provided on a bottom surface of the top die, and wiring patterns connecting the plurality of micro cells to the plurality of micro bumps; and a bottom die including a plurality of macro cells provided on a top surface thereof, wherein the plurality of macro cells are electrically connected to the plurality of micro bumps, respectively, wherein a size of a region in which the plurality of micro cells are provided is smaller than a size of a region in which the plurality of micro bumps are provided.

Abstract: The present invention provides a pharmaceutical composition for prevention or treatment of a stress disease and depression, the pharmaceutical composition be safely useable without toxicity and side effects by using an extract of leaves of Vaccinium bracteatum Thunb., which is natural resource of Korea, so that the reduction of manufacturing and production costs and the import substitution and export effects can be expected through the replacement of a raw material for preparation with a plant inhabiting in nature.

Abstract: A monoclonal antibody or an antigen-binding fragment thereof according to an embodiment of the present invention can bind to lymphocyte-activation gene 3 (LAG-3) including a heavy chain variable region and a light chain variable region and inhibit the activity thereof. Thus it is expected to be useful for the development of immunotherapeutic agents for various disorders that are associated with LAG-3.

Abstract: A wafer manufacturing method, an epitaxial wafer manufacturing method, and a wafer and epitaxial wafer manufactured thereby, are provided. The wafer manufacturing method enables the manufacture of a wafer with a low density of micropipe defects and minimum numbers of particles and scratches. The epitaxial wafer manufacturing method enables the manufacture of an epitaxial wafer that has low densities of defects such as downfall, triangular, and carrot defects, exhibits excellent device characteristics, and improves the yield of devices.

Abstract: A wafer manufacturing method, an epitaxial wafer manufacturing method, and a wafer and epitaxial wafer manufactured thereby, are provided. The wafer manufacturing method enables the manufacture of a wafer with a low density of micropipe defects and minimum numbers of particles and scratches. The epitaxial wafer manufacturing method enables the manufacture of an epitaxial wafer that has low densities of defects such as downfall, triangular, and carrot defects, exhibits excellent device characteristics, and improves the yield of devices.

Abstract: A Computation-in-Memory (CiM) device includes a plurality of first synaptic cells disposed between row lines and column lines and configured to output read currents to the column lines, the read currents corresponding to pulse signals applied through the row lines; a plurality of second synaptic cells disposed between the row lines and two or more reference column lines and configured to output two or more reference read currents to the reference column lines, the reference read currents corresponding to the pulse signals applied through the row lines; and a column control circuit configured to output digital data by compensating for the read currents output through the column lines, based on the reference read currents output through the reference column lines.

Abstract: Disclosed is an image sensor including a substrate having a first surface and a second surface opposite to each other, a first photoelectric conversion region and a second photoelectric conversion region in the substrate, a through electrode between the first and second photoelectric conversion regions, an insulation structure on the second surface of the substrate, a first color filter and a second color filter respectively provided on the first and second photoelectric conversion regions, and a photoelectric conversion layer on the insulation structure and electrically connected to the through electrode. The through electrode include a first end adjacent to the first surface and a second end adjacent to the second surface. The first end has a non-planar shape.

Abstract: An image sensor and a method for fabricating the same are provided. The image sensor includes a substrate including a first surface opposite a second surface that is incident to light, a first photoelectric conversion layer in the substrate, a wiring structure including a plurality of wiring layers on the first surface of the substrate, an interlayer insulating film on the second surface of the substrate, a capacitor structure in the interlayer insulating film, and a first wiring on the interlayer insulating film. The capacitor structure includes a first conductive pattern, a dielectric pattern, and a second conductive pattern sequentially stacked on the second surface of the substrate. The second conductive pattern is connected to the first wiring.

Abstract: A memristor device, a fabricating method thereof, a synaptic device including the memristor device, and a neuromorphic device including the synaptic device are provided. The memristor device includes a first electrode, a second electrode spaced apart from the first electrode, a resistance change layer disposed between the first electrode and the second electrode and including a polymer, and an insertion layer disposed between the first electrode and the resistance change layer and including an oxide. An electrochemical metallization mechanism (ECM) filament is formed in the resistance change layer, and a valence change mechanism (VCM) filament is formed in the insertion layer. The memristor device has a synaptic characteristic according to a change in resistance of the resistance change layer. The insertion layer includes an Al2O3 layer. The insertion layer includes an Al2O3 layer formed by an atomic layer deposition (ALD) process using a temperature of about 200° C. or higher.

Abstract: An image sensor is provided. The image sensor includes a substrate including a plurality of unit pixels, each of unit pixels includes a photoelectric conversion element; a first trench formed in the substrate in a lattice shape to isolate the plurality of unit pixels; a plurality of first capacitor structures extended along a sidewall of the first trench in the first trench, including a first electrode, a second electrode, and a first dielectric layer between the first electrode and the second electrode; and a first capacitor isolation pattern at a lattice point of the first trench to isolate the plurality of first capacitor structures.

Abstract: A color filter is disposed on a substrate. An organic photodiode is disposed on the color filter. The organic photodiode includes an electrode insulating layer having a recess region on the substrate, a first electrode on the color filter, the first electrode filling the recess region of the electrode insulating layer, a second electrode on the first electrode, and an organic photoelectric conversion layer interposed between the first electrode and the second electrode. The first electrode includes a seam extending at a first angle from a side surface of the recess region of the electrode insulating layer.

Abstract: An image sensor and a method of fabricating the image sensor, the image sensor including a semiconductor substrate having a first floating diffusion region, a molding pattern over the first floating diffusion region and including an opening, a first photoelectric conversion part at a surface of the semiconductor substrate, and a first transfer transistor connecting the first photoelectric conversion part to the first floating diffusion region. The first transfer transistor includes a channel pattern in the opening and a first transfer gate electrode. The channel pattern includes an oxide semiconductor. The channel pattern also includes a sidewall portion that covers a side surface of the opening, and a center portion that extends from the sidewall portion to a region over the first transfer gate electrode.

Abstract: An image sensor includes a substrate including a first surface and a second surface which is opposite to the first portion, and a pixel isolation portion provided in the substrate and configured to isolate unit pixels from each other. The pixel isolation portion includes a first filling insulation pattern extending from the first surface toward the second surface and having an air gap region, the first filling insulation pattern including a first sidewall and a second sidewall which is opposite to the first sidewall, a conductive structure including a first portion on the first sidewall, a second portion on the second sidewall, and a connection portion connecting the first portion and the second portion, and an insulating liner provided between the first portion and the substrate and between the second portion and the substrate.

Abstract: An image sensor and a method of fabricating the same, the image sensor including a semiconductor substrate having a first surface and a second surface facing each other; a first photoelectric conversion part disposed on the second surface of the semiconductor substrate; a first floating diffusion region provided in the semiconductor substrate adjacent to the first surface; a first interlayered insulating layer covering the first surface; a first channel pattern on the first interlayered insulating layer; and a first transfer gate electrode disposed adjacent to the first channel pattern and that controls transfer of charge generated in the first photoelectric conversion part to the first floating diffusion region through the first channel pattern.