Patents by Inventor Sang Sub KIM

Sang Sub KIM has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10930725
    Abstract: An organic light emitting diode display includes a first thin film transistor of which a channel is formed in a polycrystalline transistor, a second thin film transistor of which a channel is formed in an oxide semiconductor layer, an organic light emitting diode electrically connected to the first thin film transistor, a storage capacitor having a first electrode and a second electrode, wherein the second electrode of the storage capacitor is electrically connected to a gate electrode of the first thin film transistor, and an overlapping layer overlapping the oxide semiconductor layer in a plan view and receiving a positive voltage. The oxide semiconductor layer is positioned higher than the gate electrode of the first thin film transistor and the second electrode of the storage capacitor.
    Type: Grant
    Filed: September 19, 2019
    Date of Patent: February 23, 2021
    Assignee: SAMSUNG DISPLAY CO., LTD.
    Inventors: Myoung Geun Cha, Sang Gun Choi, Sang Sub Kim, Ji Yeong Shin, Yong Su Lee, Ki Seok Choi
  • Publication number: 20210036080
    Abstract: A display device includes a pixel disposed in a display region. The pixel includes a light-emitting element connected between a first power source and a second power source; a first transistor connected between the first power source and the light-emitting element to control a driving current flowing in the light-emitting element in response to a voltage of a first node; and at least one switching transistor to transmit a data signal or a voltage of an initialization power source to the first node. The switching transistor includes a first channel region, a first conductive region and a second conductive region which are respectively disposed at opposite sides of the first channel region, and a first wide band-gap region disposed between the first channel region and the second conductive region.
    Type: Application
    Filed: April 23, 2020
    Publication date: February 4, 2021
    Applicant: Samsung Display Co., LTD.
    Inventors: Keun Woo KIM, Hye Na KWAK, Doo Na KIM, Sang Sub KIM, Thanh Tien NGUYEN, Yong Su LEE, Jae Hwan CHU
  • Publication number: 20210036079
    Abstract: A display device includes: a pixel at a display region. The pixel includes: a light-emitting element connected between a first power source and a second power source; and a first transistor connected between the first power source and the light-emitting element, the first transistor to control a driving current of the light-emitting element in response to a voltage of a first node. The first transistor includes a first driving transistor and a second driving transistor that are connected in series with each other between the first power source and the light-emitting element, and the first driving transistor and the second driving transistor have structures that are asymmetric with each other in a cross-sectional view.
    Type: Application
    Filed: April 2, 2020
    Publication date: February 4, 2021
    Inventors: Keun Woo KIM, Yong Su LEE, Myoung Geun CHA, Doo Na KIM, Sang Sub KIM, Jae Hwan CHU, Sang Gun CHOI
  • Publication number: 20200258966
    Abstract: An organic light emitting diode display includes a first thin film transistor of which a channel is formed in a polycrystalline transistor, a second thin film transistor of which a channel is formed in an oxide semiconductor layer, an organic light emitting diode electrically connected to the first thin film transistor, a storage capacitor having a first electrode and a second electrode, wherein the second electrode of the storage capacitor is electrically connected to a gate electrode of the first thin film transistor, and an overlapping layer overlapping the oxide semiconductor layer in a plan view and receiving a positive voltage. The oxide semiconductor layer is positioned higher than the gate electrode of the first thin film transistor and the second electrode of the storage capacitor.
    Type: Application
    Filed: September 19, 2019
    Publication date: August 13, 2020
    Inventors: MYOUNG GEUN CHA, SANG GUN CHOI, SANG SUB KIM, JI YEONG SHIN, YONG SU LEE, KI SEOK CHOI
  • Patent number: 9772301
    Abstract: The present invention relates to a sensor including a core-shell nanostructure, and more particularly, to a sensor including: a base material; a sensing part including a core-shell nanostructure that has a core including a first metal oxide and a shell including a second metal oxide formed on the core; and two electrode layers spaced from each other on the sensing part.
    Type: Grant
    Filed: February 2, 2015
    Date of Patent: September 26, 2017
    Assignee: INHA-INDUSTRY PARTNERSHIP INSTITUTE
    Inventors: Sang Sub Kim, Sun-Woo Choi, Akash Katoch
  • Publication number: 20150300980
    Abstract: The present invention relates to a sensor including a core-shell nanostructure, and more particularly, to a sensor including: a base material; a sensing part including a core-shell nanostructure that has a core including a first metal oxide and a shell including a second metal oxide formed on the core; and two electrode layers spaced from each other on the sensing part.
    Type: Application
    Filed: February 2, 2015
    Publication date: October 22, 2015
    Inventors: Sang Sub KIM, Sun-Woo CHOI, Akash KATOCH