Abstract: In a CVD method using a CVD system in which the inside of the vacuum container of the said CVD system is separated into a plasma generating space and a film forming space by a conductive partition wall having plural penetration holes, exciting radicals produced in the plasma generating space are introduced into the film forming space only through the said penetration holes, supplying material gas from outside into an inner space of the said partition wall, which is separated from the plasma generating space and communicating with the film forming space through plural diffusion holes, and introducing the said material gas into the film forming space through the said diffusion holes, and a film is formed on the substrate by the exciting radicals and material gas thus introduced into the film forming space, the invention is intended to provide a CVD method suited to mass production of oxide films, mainly to mass production of oxide films for gate having excellent characteristics.

Abstract: In a CVD method using a CVD system in which the inside of the vacuum container of the said CVD system is separated into a plasma generating space and a film forming space by a conductive partition wall having plural penetration holes, exciting radicals produced in the plasma generating space are introduced into the film forming space only through the said penetration holes, supplying material gas from outside into an inner space of the said partition wall, which is separated from the plasma generating space and communicating with the film forming space through plural diffusion holes, and introducing the said material gas into the film forming space through the said diffusion holes, and a film is formed on the substrate by the exciting radicals and material gas thus introduced into the film forming space, the invention is intended to provide a CVD method suited to mass production of oxide films, mainly to mass production of oxide films for gate having excellent characteristics.

Abstract: A CVD system in which a vacuum container is separated into a plasma generating space and a film forming space by a conductive partition wall having plural penetration holes, radicals generated in the plasma generating space are introduced into the film forming space only through the penetration holes of the partition wall, and material gas supplied from outside into the partition wall is introduced into the film forming space through the internal space of the partition wall, which is communicating with the film forming space through plural diffusion holes while separated from the plasma generating space and the penetration holes, and a film is formed on the substrate by the radicals and material gas introduced into the film forming space. In the CVD system, the penetration holes (25) of the conductive partition wall (14) are formed so that the hole diameter at the film forming space (16) side may be equal to or larger than the hole diameter at the plasma generating space (15) side.

Abstract: A CVD system in which a vacuum container is separated into a plasma generating space and a film forming space by a conductive partition wall having plural penetration holes, radicals generated in the plasma generating space are introduced into the film forming space only through the penetration holes of the partition wall, and material gas supplied from outside into the partition wall is introduced into the film forming space through the internal space of the partition wall, which is communicating with the film forming space through plural diffusion holes while separated from the plasma generating space and the penetration holes, and a film is formed on the substrate by the radicals and material gas introduced into the film forming space.