Abstract: Provided are diodes and photovoltaic devices incorporating a single-crystalline ferroelectric or pyroelectric with remnant electric polarization sandwiched with transparent or semitransparent electrodes.

Abstract: A solid structure includes a substrate and a layer located on a surface of the substrate. The layer includes crystalline or polycrystalline MgB2.

Abstract: A method for making a self-assembled spinel having an ordered nanocrystal superlattice. The method may involve the steps of providing an oxide mixture that is capable of forming a spinel having Jahn-Teller ions; sintering or heat-treating the mixture to form the spinel having the Jahn-Teller ions; and cooling the spinel having the Jahn-Teller ions at a rate of less than 400° C./hour. Also, a nano-scale spinel formed by self-assembly. The nano-scale spinel may include a first phase of spinel comprising a high concentration of Jahn-Teller ions; and a second phase of spinel including a low concentration of Jahn-Teller ions. Further, a high density storage device including a nano-scale spinel formed by self-assembly, the nano-scale spinel including a first phase of spinel comprising a high concentration of Jahn-Teller ions; and a second phase of spinel including a low concentration of Jahn-Teller ions.

Abstract: The room temperature, low field intergrain magnetoresistance (IMR) of the double perovsktite SrFe0.5MO0.5O3 is found to be highly tunable by doping either Ca or Ba into the Sr site. The dopant exerts a chemical pressure, changing the Curie temperature and the magnetic softness. The IMR at optimal doping (Sr0.2Ba0.8Fe0.5Mo0.5O3) is approximately 3.5% in 100 Oe, and increases further in high fields. The unprecedented strength of the IMR in this highly spin polarized system provides new grounds for employing novel magnetic materials for new magnetic sensing applications and spin electronics.

Abstract: A solid structure includes a substrate and a layer located on a surface of the substrate. The layer includes crystalline or polycrystalline MgB2.

Abstract: The room temperature, low field intergrain magnetoresistance (IMR) of the double perovsktite SrFe0.5MO0.5O3 is found to be highly tunable by doping either Ca or Ba into the Sr site. The dopant exerts a chemical pressure, changing the Curie temperature and the magnetic softness. The IMR at optimal doping (Sr0.2Ba0.8Fe0.5Mo0.5O3) is approximately 3.5% in 100 Oe, and increases further in high fields. The unprecedented strength of the IMR in this highly spin polarized system provides new grounds for employing novel magnetic materials for new magnetic sensing applications and spin electronics.

Abstract: An electromechanical vice includes a support structure, a component moveable with respect to the support structure, and a piezoelectric device mechanically coupled to both the support structure and the component. The piezoelectric device includes a polycrystalline body and electrodes located on the body. The body has a composition with a stoichiometry described by [Pb(Mg1/3Nb2/3)O3](1−x) [PbTiO3]x. The value of x is in the range of about 0.31 to about 0.47.

Abstract: A device includes a polycrystalline body having a stoichiometry that is described by [Pb(Mg1/3Nb2/3)O3](1-x)[PbTiO3]x. The value of x is in a range of about 0.31 to about 0.47.

Abstract: A device includes a polycrystalline body having a stoichiometry that is described by [Pb(Mg1/3Nb2/3))O3](1−x)[PbTiO3]x. The value of x is in a range of about 0.31 to about 0.47.

Abstract: A solid structure includes a substrate and a layer located on a surface of the substrate. The layer includes crystalline or polycrystalline MgB2.

Abstract: A device includes a polycrystalline body having a stoichiometry that is described by [Pb(Mg⅓Nb⅔)O3](1−x)[PbTiO3]x. The value of x is in a range of about 0.31 to about 0.47.

Abstract: An article that uses a magnetoresistive material comprising one or more CrO.sub.2 grains having an insulating material, advantageously Cr.sub.2 O.sub.3, along at least a portion of the grain boundary or boundaries, the magnetoresistive article advantageously exhibiting a magnetoresistance ratio greater than 12% at 5K and 20 kOe.

Abstract: Magnetoresistive elements according to this invention comprise magnetically soft material in close proximity to the magnetoresistive material, exemplarily a perovskite manganite. The combination results in magnetic field "amplification", with large resistance changes attainable at relatively low applied fields. The invention exemplarily is embodied in magnetic sensors, e.g., magnetoresistive read/write heads.