Abstract: A semiconductor device includes: a substrate includes an active area; a first landing pad connected to the active area and disposed on the substrate; a second landing pad connected to the active area, and spaced apart from the first landing pad, wherein the second landing pad is disposed on the substrate; a first lower electrode disposed on the first landing pad and extending in a direction substantially perpendicular to the substrate; a second lower electrode disposed on the second landing pad and extending in the direction substantially perpendicular to the substrate; a dielectric layer extending along the first lower electrode and the second lower electrode; and an upper electrode disposed on the dielectric layer, wherein a first upper surface of the first landing pad is disposed below a second upper surface of the second landing pad with respect to a lower surface of the substrate.

Abstract: A peridynamic method having an added mirroring node according to embodiments of the present invention includes: a first step of calculating a shape tensor of a first node; a second step of calculating force state vectors of the first node and each of a plurality of second nodes by using the shape tensor; and a third step of calculating a peridynamic motion equation of the first node by using the force state vectors. The first node is a node located on a boundary of a structure and has a predetermined size horizon region, the plurality of second nodes is nodes in the horizon region, the plurality of second nodes includes one or more third nodes, and the third node is a second node having no node at a point which is origin-symmetrical based on the first node among the plurality of second nodes. In the first step, the shape tensor is calculated by using a position value in which the third node is origin-symmetrical based on the first node.

Abstract: The present invention relates to a coil spring support for a vehicular suspension system, which comprises a base plate and a support column protruding from the base plate, wherein a coil spring is coupled to the support column in such a manner that the lower end of the coil spring is fitted in and coupled to a coupling groove, which is formed on the outer peripheral surface of the support column and at a position having a predetermined height from the base plate, so that the coil spring support can be auxiliarily installed on a plate spring of a vehicle so as to compensate and improve a shock absorbing capability of the existing vehicle.

Abstract: The present invention relates to a coil spring support for a vehicular suspension system, which comprises a base plate and a support column protruding from the base plate, wherein a coil spring is coupled to the support column in such a manner that the lower end of the coil spring is fitted in and coupled to a coupling groove, which is formed on the outer peripheral surface of the support column and at a position having a predetermined height from the base plate, so that the coil spring support can be auxiliarily installed on a plate spring of a vehicle so as to compensate and improve a shock absorbing capability of the existing vehicle.

Abstract: Provided are a laser diode using zinc oxide nanorods and a manufacturing method thereof. The laser diode using zinc oxide nanorods according to one embodiment of the present disclosure includes: a wafer; an electrode layer formed on the wafer; a nanorod layer including a plurality of n-doped zinc oxide nanorods grown on the electrode layer; and a p-doped single crystal semiconductor layer that is physically in contact with the ends of the zinc oxide nanorods.

Abstract: Disclosed is a nanorod semiconductor device having a contact structure, and a method for manufacturing the same. The nanorod semiconductor device having a contact structure according to one embodiment of the present disclosure includes: a transparent wafer; a transparent electrode layer formed on the transparent wafer; a nanorod layer including a plurality of semiconductor nanorods doped with dopants having a first polarity and grown on the transparent electrode layer; and a single crystal semiconductor layer doped with dopants having a second polarity and forming a certain physical contact with the ends of the semiconductor nanorods.

Abstract: Provided are a laser diode using zinc oxide nanorods and a manufacturing method thereof. The laser diode using zinc oxide nanorods according to one embodiment of the present disclosure includes: a wafer; an electrode layer formed on the wafer; a nanorod layer including a plurality of n-doped zinc oxide nanorods grown on the electrode layer; and a p-doped single crystal semiconductor layer that is physically in contact with the ends of the zinc oxide nanorods.

Abstract: Disclosed are an oxide-based nonvolatile memory with superior resistive switching characteristics and a method for preparing the same. More particularly, the disclosure relates to a nonvolatile memory device having a metal/reduced graphene oxide (r-GO) thin film/metal structure and a method for preparing the same.