Abstract: A vertical semiconductor device and a method for fabricating the same may include forming an alternating stack of dielectric layers and sacrificial layers over a lower structure, forming an opening by etching the alternating stack, forming a non-conformal blocking layer on the alternating stack in which the opening is formed, adsorbing a deposition inhibitor on a surface of the blocking layer to convert the non-conformal blocking layer into a conformal blocking layer on which the deposition inhibitor is adsorbed, and forming a charge storage layer on the conformal blocking layer.

Abstract: Provided are semiconductor devices having various line widths and a method of manufacturing the semiconductor device. The semiconductor device includes: a substrate including a first region and a second region, a plurality of first gate lines extending in a first direction in the first region and each having a first width in a second; a plurality of second gate lines extending in the first direction in the second region and each having a second width that is different from the first width in the second direction and a pitch that is the same as a pitch of the plurality of first gate lines; a spacer layer covering opposite side walls of each of the plurality of first gate lines and each of the plurality of second gate lines; and a first base layer arranged between the substrate and the spacer layer in the first region.

Abstract: Provided are semiconductor devices having various line widths and a method of manufacturing the semiconductor device. The semiconductor device includes: a substrate including a first region and a second region, a plurality of first gate lines extending in a first direction in the first region and each having a first width in a second; a plurality of second gate lines extending in the first direction in the second region and each having a second width that is different from the first width in the second direction and a pitch that is the same as a pitch of the plurality of first gate lines; a spacer layer covering opposite side walls of each of the plurality of first gate lines and each of the plurality of second gate lines; and a first base layer arranged between the substrate and the spacer layer in the first region.

Abstract: Provided are semiconductor devices having various line widths and a method of manufacturing the semiconductor device. The semiconductor device includes: a substrate including a first region and a second region, a plurality of first gate lines extending in a first direction in the first region and each having a first width in a second; a plurality of second gate lines extending in the first direction in the second region and each having a second width that is different from the first width in the second direction and a pitch that is the same as a pitch of the plurality of first gate lines; a spacer layer covering opposite side walls of each of the plurality of first gate lines and each of the plurality of second gate lines; and a first base layer arranged between the substrate and the spacer layer in the first region.

Abstract: Provided are semiconductor devices having various line widths and a method of manufacturing the semiconductor device. The semiconductor device includes: a substrate including a first region and a second region, a plurality of first gate lines extending in a first direction in the first region and each having a first width in a second; a plurality of second gate lines extending in the first direction in the second region and each having a second width that is different from the first width in the second direction and a pitch that is the same as a pitch of the plurality of first gate lines; a spacer layer covering opposite side walls of each of the plurality of first gate lines and each of the plurality of second gate lines; and a first base layer arranged between the substrate and the spacer layer in the first region.

Abstract: A monitoring pattern for detecting a defect in a semiconductor device allows a voltage contrast inspection which may be verified by an electrical test where no special test pattern is required for the electrical test. The monitoring pattern includes a test pattern with line shapes arranged in parallel and spaced apart at predetermined linewidths and intervals, and an interconnection layer connected to the test pattern, where the test pattern is adapted to be charged with a specific potential to be displayed as a voltage contrast image when scanned with an electron beam.

Abstract: A method of enhancing yield of semiconductor integrated circuit includes determining multiple experimental values, each experimental value corresponding to a distance from a side of a hole to an opposing side of a shape surrounding the hole, forming test patterns representing each of the experimental values on a wafer and calculating experimental value-based systematic fault rates from the test patterns; converting the experimental value-based systematic fault rates of the hole into the experimental value-based systematic fault rates, calculating a length of a side of the hole for which a distance between the side of the hole and the opposing side of the shape corresponds to each of experimental values, and calculating a systematic fault rate of the hole using the experimental value-based systematic fault rates per unit hole length and the length of the sides of the hole calculated for the respective experimental values in the desired layout.

Abstract: In a method and structure for semiconductor failure analysis, the structure comprises: a plurality of analytic fields disposed on a predetermined area of a semiconductor device; semiconductor transistors arranged in each of the analytic fields, the semiconductor transistors arranged in an array; wordlines arranged on each of the plurality of the analytic fields, connecting the semiconductor transistors with each other in a first direction; and bitline structures on each of the plurality of the analytic fields, connecting the semiconductor transistors with each other in a second direction, wherein the bitline structures are configured in different patterns in each of the plurality of analytic fields.

Abstract: A monitoring pattern for detecting a defect in a semiconductor device allows a voltage contrast inspection which may be verified by an electrical test where no special test pattern is required for the electrical test. The monitoring pattern includes a test pattern with line shapes arranged in parallel and spaced apart at predetermined linewidths and intervals, and an interconnection layer connected to the test pattern, where the test pattern is adapted to be charged with a specific potential to be displayed as a voltage contrast image when scanned with an electron beam.

Abstract: A method of enhancing yield of semiconductor integrated circuit includes determining multiple experimental values, each experimental value corresponding to a distance from a side of a hole to an opposing side of a shape surrounding the hole, forming test patterns representing each of the experimental values on a wafer and calculating experimental value-based systematic fault rates from the test patterns; converting the experimental value-based systematic fault rates of the hole into the experimental value-based systematic fault rates, calculating a length of a side of the hole for which a distance between the side of the hole and the opposing side of the shape corresponds to each of experimental values, and calculating a systematic fault rate of the hole using the experimental value-based systematic fault rates per unit hole length and the length of the sides of the hole calculated for the respective experimental values in the desired layout.

Abstract: A method of improving yield in integrated circuit device fabrication includes calculating a fault rate for a design rule based on a plurality failure rates for a corresponding plurality of Design Of Experiment (DOE) rule values and based on numbers of features in a layout of interest corresponding to ones of the plurality of DOE rule values. The layout of interest is corrected based on the fault rate for the design rule. Related systems and devices are also discussed.

Abstract: In a method and structure for semiconductor failure analysis, the structure comprises: a plurality of analytic fields disposed on a predetermined area of a semiconductor device; semiconductor transistors arranged in each of the analytic fields, the semiconductor transistors arranged in an array; wordlines arranged on each of the plurality of the analytic fields, connecting the semiconductor transistors with each other in a first direction; and bitline structures on each of the plurality of the analytic fields, connecting the semiconductor transistors with each other in a second direction, wherein the bitline structures are configured in different patterns in each of the plurality of analytic fields.