Patents by Inventor Sanghamitra Sen

Sanghamitra Sen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220127781
    Abstract: Silk processed, coated, repaired, and/or infused leather or leather articles, and methods of preparing the same are disclosed herein. In some embodiments, the invention relates to silk-coated leather apparel and products for use in home and automotive applications, such as leather coated with pure silk fibroin-based proteins or protein fragments thereof. In some embodiments, the invention relates to silk and silk protein fragments compositions, and methods of making and using thereof, for processing leather, for example coating leather, and/or repairing, hiding, or masking defects on or within leather, and/or as a mixing agent, additive, or replacement for leather processing chemicals.
    Type: Application
    Filed: July 18, 2019
    Publication date: April 28, 2022
    Inventors: Gregory H. ALTMAN, Carlos J. BOSQUES, Alexander J. WOLFE, Sara A. JOHNSON, Enrico MORTARINO, Maria L. UFRET, Sanghamitra SEN
  • Patent number: 6514457
    Abstract: Impurities are extracted from a thin-film device structure based on mercury, cadmium, zinc, and/or tellurium, such as HgCdTe, CdTe, CdZnTe, or HgCdZnTe. The impurities are extracted by furnishing a sink medium comprising molten bismuth, and contacting the contaminated structure to the sink medium for a period of time sufficiently long that impurities diffuse out of the structure and into the bismuth for removal. The molten bismuth may additionally contain small amounts of one or more of the major components of the structure (mercury, cadmium, zinc, and/or tellurium) to inhibit loss of these elements from the structure.
    Type: Grant
    Filed: January 25, 2001
    Date of Patent: February 4, 2003
    Assignee: Raytheon Company
    Inventors: David R. Rhiger, Sanghamitra Sen
  • Patent number: 5616925
    Abstract: Gamma ray detectors (20, 130) are provided with a detector layer (30) that is formed of Hg.sub.x Cd.sub.1-x-y Zn.sub.y Te, wherein 0<x<0.05 and 0.ltoreq.y<0.5. The Hg percentage in the group II sublattice of this detector layer is limited to replace Cd vacancies. These Cd vacancies are native point defects which degrade the resolution of gamma ray detectors because they facilitate early electron-hole recombination and time delays of current carriers.
    Type: Grant
    Filed: June 7, 1995
    Date of Patent: April 1, 1997
    Assignee: Santa Barbara Research Center
    Inventors: David R. Rhiger, Sanghamitra Sen, William J. Hamilton, Jr.