Patents by Inventor Sang Jean Jeon
Sang Jean Jeon has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230256551Abstract: There is provided a substrate support device. The substrate support device includes a substrate support part on which a wafer is deposited, the substrate support part including a first mesh electrode and a second mesh electrode disposed under the first mesh electrode; a chucking circuit configured to apply a DC voltage to the first mesh electrode; and an edge control circuit configured to control timings of operations related to the first mesh electrode and the second mesh electrode and control RF (Radio Frequency). The second mesh electrode is divided into a plurality of second sub-mesh electrode to remove an induced electromotive force generated due to a closed loop.Type: ApplicationFiled: February 17, 2023Publication date: August 17, 2023Applicant: TES Co., LtdInventors: Sang-Jean JEON, Hyun-Sang HWANG
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Publication number: 20230033091Abstract: A plasma processing apparatus may include a support configured to receive a substrate, a gas distribution plate (GDP) including a plurality of nozzles facing the support, a main splitter configured to supply a process gas, and an additional splitter configured to supply an acceleration gas or a deceleration gas. The plurality of nozzles may include a plurality of central nozzles, a plurality of outer nozzles, a plurality of middle nozzles configured to spray the process gas and the acceleration gas, a plurality of first nozzles, and a plurality of second nozzles.Type: ApplicationFiled: September 23, 2022Publication date: February 2, 2023Applicant: Samsung Electronics Co., Ltd.Inventors: Chan Hoon Park, Jung Hwan Um, Jin Young Park, Ho Yong Park, Jin Young Bang, Jong Woo Sun, Sang Jean Jeon, Je Woo Han
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Publication number: 20190304751Abstract: A plasma processing apparatus may include a support configured to receive a substrate, a gas distribution plate (GDP) including a plurality of nozzles facing the support, a main splitter configured to supply a process gas, and an additional splitter configured to supply an acceleration gas or a deceleration gas. The plurality of nozzles may include a plurality of central nozzles, a plurality of outer nozzles, a plurality of middle nozzles configured to spray the process gas and the acceleration gas, a plurality of first nozzles, and a plurality of second nozzles.Type: ApplicationFiled: August 31, 2018Publication date: October 3, 2019Inventors: Chan Hoon Park, Jung Hwan Um, Jin Young Park, Ho Yong Park, Jin Young Bang, Jong Woo Sun, Sang Jean Jeon, Je Woo Han
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Patent number: 9773645Abstract: A remote plasma generator includes a body, a driver, and a protection tube. The body includes a gas injection port, a plasma exhaust port, and a plasma generation pipe through which discharge gas or plasma flow. The driver is coupled to the body and generates a magnetic field and plasma in the body. The protection tube is at an inner side of the plasma generation pipe to protect the plasma generation pipe from plasma.Type: GrantFiled: January 29, 2016Date of Patent: September 26, 2017Assignees: SAMSUNG ELECTRONICS CO., LTD., DANDAN CO., LTD., NEW POWER PLASMA CO., LTD.Inventors: Ja-woo Lee, Chung-huan Jeon, Heok-jae Lee, Jang-hyoun Youm, Sang-jean Jeon, Kwang-young Jung, Sun-uk Kim, Kang-ho Lee, Jung-hyun Cho, Soon-im Wi, Yun-sik Yang, Moo-jin Kim, Jang-kyu Choi
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Publication number: 20160307739Abstract: A remote plasma generator includes a body, a driver, and a protection tube. The body includes a gas injection port, a plasma exhaust port, and a plasma generation pipe through which discharge gas or plasma flow. The driver is coupled to the body and generates a magnetic field and plasma in the body. The protection tube is at an inner side of the plasma generation pipe to protect the plasma generation pipe from plasma.Type: ApplicationFiled: January 29, 2016Publication date: October 20, 2016Applicants: DANDAN CO., LTD., New Power Plasma Co., Ltd.Inventors: Ja-woo LEE, Chung-huan JEON, Heok-jae LEE, Jang-hyoun YOUM, Sang-jean JEON, Kwang-young JUNG, Sun-uk KIM, Kang-ho LEE, Jung-hyun CHO, Soon-im WI, Yun-sik YANG, Moo-jin KIM, Jang-kyu CHOI
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Patent number: 9136094Abstract: A method of operating a plasma processing device includes outputting a first RF power having a first frequency and a first duty ratio, and outputting a second RF power having a second frequency higher than the first frequency and a second duty ratio smaller than the first duty ratio. The outputting of the first RF power and the outputting of the second RF power are synchronized with each other.Type: GrantFiled: September 9, 2013Date of Patent: September 15, 2015Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Jung Hyun Cho, Hyung Joon Kim, Sang Jean Jeon, Sang Heon Lee, Jeong Yun Lee, Kyung Yub Jeon, Vasily Pashkovskiy
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Patent number: 9105581Abstract: In a method of processing a substrate, a first plasma may be generated from a first reaction gas. A second plasma may be generated from a second reaction gas. The first plasma and the second plasma may be individually applied to the substrate. Thus, each of the at least two remote plasma sources may generate at least two plasmas under different process recipes, which may be optimized for processing the substrate. As a result, the substrate processed using the optimal plasmas may have a desired shape.Type: GrantFiled: June 5, 2014Date of Patent: August 11, 2015Assignee: Samsung Electronics Co., Ltd.Inventors: Sam Hyung-sam Kim, Gon-Jun Kim, Volynets Vladmir, Yong-Kyun Park, In-Cheol Song, Sang-Heon Lee, Sang-Jean Jeon
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Publication number: 20150206716Abstract: A plasma generating apparatus includes a chamber that encloses a reaction space that is isolated from the outside; a wafer chuck disposed in a lower portion of the chamber; a plasma generation unit disposed in an upper portion of the chamber; a first radio-frequency (RF) power source that supplies RF power to the plasma generation unit; a first matching unit interposed between the first RF power source and the plasma generation unit; a second RF power source that supplies RF power to the wafer chuck; and a second matching unit interposed between the second RF power source and the wafer chuck. The first RF power source supplies a first pulse power level and a different second pulse power level at different times.Type: ApplicationFiled: January 21, 2015Publication date: July 23, 2015Inventors: HYUNGJOON KIM, Vasily Pashkovskiy, Sang-Heon Lee, Sang-Jean Jeon, Doug-Yong Sung, Yun-Kwang Jeon, Bong-Seong Kim
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Publication number: 20150155178Abstract: In a method of processing a substrate, a first plasma may be generated from a first reaction gas. A second plasma may be generated from a second reaction gas. The first plasma and the second plasma may be individually applied to the substrate. Thus, each of the at least two remote plasma sources may generate at least two plasmas under different process recipes, which may be optimized for processing the substrate. As a result, the substrate processed using the optimal plasmas may have a desired shape.Type: ApplicationFiled: June 5, 2014Publication date: June 4, 2015Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Sam Hyung-sam KIM, Gon-Jun KIM, Volynets VLADMIR, Yong-Kyun PARK, In-Cheol SONG, Sang-Heon LEE, Sang-Jean JEON
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Publication number: 20140273484Abstract: An inductively coupled plasma processing apparatus includes a chamber configured to provide a space for processing a substrate and including a window formed in an upper portion thereof, a substrate stage configured to support the substrate within the chamber and including a lower electrode, the lower electrode configured to receive a first radio frequency signal, an upper electrode arranged on the upper portion of the chamber with the window interposed between the upper electrode and the space for processing the substrate, the upper electrode configured to receive a second radio frequency signal, a conductive shield member arranged within the chamber and configured to cover the window, and a shield power supply configured to apply a shield signal to the shield member in synchronization with the second radio frequency signal.Type: ApplicationFiled: March 7, 2014Publication date: September 18, 2014Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: JEONG-YUN LEE, HAE-JOONG PARK, KYUNG-YUB JEON, SANG-JEAN JEON
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Publication number: 20140193978Abstract: A method of operating a plasma processing device includes outputting a first RF power having a first frequency and a first duty ratio, and outputting a second RF power having a second frequency higher than the first frequency and a second duty ratio smaller than the first duty ratio. The outputting of the first RF power and the outputting of the second RF power are synchronized with each other.Type: ApplicationFiled: September 9, 2013Publication date: July 10, 2014Inventors: Jung Hyun CHO, Hyung Joon KIM, Sang Jean JEON, Sang Heon LEE, Jeong Yun LEE, Kyung Yub JEON, Vasily PASHKOVSKIY
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Patent number: 8404080Abstract: An apparatus to treat a substrate includes a processing chamber including a reaction space where a substrate to be treated is placed and a plasma is formed, a ferrite core having a plurality of poles disposed outside the reaction space and a connector facing the reaction space across the plurality of poles and connecting the plurality of the poles each other, a coil winding around the plurality of poles, and an electric power unit supplying electric power to the coil.Type: GrantFiled: May 4, 2006Date of Patent: March 26, 2013Assignee: Samsung Electronics Co., Ltd.Inventors: Sang-jean Jeon, Jong-rok Park, Sung-yeup Sa, Hee-jeon Yang, Guen-suk Lee
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Patent number: 8343309Abstract: A substrate processing apparatus. The substrate processing apparatus includes a vacuum chamber having a reaction space to generate plasma in which a target substrate is located, a low frequency antenna unit located outside the reaction space to generate plasma in the reaction space, a low frequency power supply to apply low frequency power to the low frequency antenna unit, a high frequency antenna unit located outside the reaction space to generate plasma in the reaction space, and a high frequency power supply to apply high frequency power to the high frequency antenna unit. The apparatus allows the ignition of plasma to be performed efficiently via the high frequency antenna unit, and improves efficiency of inductive coupling between plasma and a low frequency antenna via the low frequency antenna unit, thereby improving plasma generation efficiency.Type: GrantFiled: April 16, 2007Date of Patent: January 1, 2013Assignee: SAMSUNG Electronics Co., Ltd.Inventors: Sang Jean Jeon, Chin Wook Chung, Guen Suk Lee, Seung Yuop Sa, Hyung Chul Cho
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Publication number: 20120118876Abstract: According to example embodiments, a flip chip bonding apparatus includes a metal chamber, a stage in the metal chamber, and a planar antenna in the chamber. The stage may be configured to receive a circuit board having flip chips arranged thereon. The antenna may be configured to bond the flip chips to the circuit board by inductively heating the flip chips on the circuit board.Type: ApplicationFiled: November 4, 2011Publication date: May 17, 2012Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Jung Hyun Cho, Yury Tolmachev, Sang Jean Jeon, Byung Joon Lee, Jae Bong Shin, Hyungjoon Kim, Moon Seok Kim
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Patent number: 8169148Abstract: A plasma generating apparatus having superior plasma generation efficiency that uses a single reaction chamber. The plasma generating apparatus includes a RF generator for providing a RF power, an antenna for generating an electromagnetic field upon receiving the RF power, a reaction chamber for exciting/ionizing a reaction gas via the electromagnetic field, and generating a plasma, and a plasma channel for absorbing the RF power, and allowing a current signal to be induced to the plasma.Type: GrantFiled: May 1, 2008Date of Patent: May 1, 2012Assignee: Samsung Electronics Co., Ltd.Inventors: Sang Jean Jeon, Yuri Tolmachev, Su Ho Lee, Seoung Hyun Seok, Young Min Park, Won Hyuk Jang
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Publication number: 20120007503Abstract: At least two antenna coils are electrically connected in parallel to each other to generate uniform high density plasma, and capacitors are installed between the respective antenna coils and a ground to minimize an antenna voltage, thereby minimizing the effect of capacitive plasma coupling due to the antenna voltage.Type: ApplicationFiled: July 6, 2011Publication date: January 12, 2012Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Hyungjoon Kim, Sang Jean Jeon, Yury Tolmachev, Vasily Pashkovskiy, Sangheon Lee, Yunkwang Jeon
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Publication number: 20120006351Abstract: A cleaning method for cleaning a semiconductor manufacturing apparatus may include generating plasma from a cleaning gas. The semiconductor manufacturing apparatus may be cleaned with the plasma. A positive direct-current voltage may be applied to an ESC of the semiconductor manufacturing apparatus during a cleaning of the semiconductor manufacturing apparatus. A negative direct-current voltage may be applied to the ESC during the cleaning of the semiconductor manufacturing apparatus. Also, a wall of the process chamber may be cleaned by applying the positive direct-current voltage to the ESC.Type: ApplicationFiled: July 6, 2011Publication date: January 12, 2012Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Hyun-Su Jun, Hun-Jung Yi, Sang-jean Jeon, Se-Yeon Kim, In-Joong Kim
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Publication number: 20100065215Abstract: A plasma generating apparatus including a plurality of plasma source modules. Each plasma source module includes a ferrite core having high magnetic permeability and a plasma channel through which plasma may pass. The plasma generating apparatus may effectively generate and uniformly distribute large-area and high-density plasma without a dielectric window.Type: ApplicationFiled: September 3, 2009Publication date: March 18, 2010Inventors: Sang Jean Jeon, Yuri Tolmachev, Vasily Pashkovskiy, Kee Soo Park, Ju Hyun Lee, Su Ho Lee, Chan Yun Lee
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Publication number: 20090015165Abstract: A plasma generating apparatus having superior plasma generation efficiency that uses a single reaction chamber. The plasma generating apparatus includes a RF generator for providing a RF power, an antenna for generating an electromagnetic field upon receiving the RF power, a reaction chamber for exciting/ionizing a reaction gas via the electromagnetic field, and generating a plasma, and a plasma channel for absorbing the RF power, and allowing a current signal to be induced to the plasma.Type: ApplicationFiled: May 1, 2008Publication date: January 15, 2009Applicant: Samsung Eletronics Co., Ltd.Inventors: Sang Jean Jeon, Yuri Tolmachev, Su Ho Lee, Seoung Hyun Seok, Young Min Park, Won Hyuk Jang
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Publication number: 20080017317Abstract: A substrate processing apparatus. The substrate processing apparatus includes a vacuum chamber having a reaction space to generate plasma in which a target substrate is located, a low frequency antenna unit located outside the reaction space to generate plasma in the reaction space, a low frequency power supply to apply low frequency power to the low frequency antenna unit, a high frequency antenna unit located outside the reaction space to generate plasma in the reaction space, and a high frequency power supply to apply high frequency power to the high frequency antenna unit. The apparatus allows the ignition of plasma to be performed efficiently via the high frequency antenna unit, and improves efficiency of inductive coupling between plasma and a low frequency antenna via the low frequency antenna unit, thereby improving plasma generation efficiency.Type: ApplicationFiled: April 16, 2007Publication date: January 24, 2008Applicant: Samsung Electronics Co., Ltd.Inventors: Sang Jean JEON, Chin Wook Chung, Guen Suk Lee, Seung Yuop Sa, Hyung Chul Cho