Patents by Inventor Sang-Wuk Park
Sang-Wuk Park has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240164084Abstract: A semiconductor device includes: a substrate includes an active area; a first landing pad connected to the active area and disposed on the substrate; a second landing pad connected to the active area, and spaced apart from the first landing pad, wherein the second landing pad is disposed on the substrate; a first lower electrode disposed on the first landing pad and extending in a direction substantially perpendicular to the substrate; a second lower electrode disposed on the second landing pad and extending in the direction substantially perpendicular to the substrate; a dielectric layer extending along the first lower electrode and the second lower electrode; and an upper electrode disposed on the dielectric layer, wherein a first upper surface of the first landing pad is disposed below a second upper surface of the second landing pad with respect to a lower surface of the substrate.Type: ApplicationFiled: August 22, 2023Publication date: May 16, 2024Inventors: Do Keun LEE, Dong Wook KIM, Yang Doo KIM, Sang Wuk PARK, Min Kyu SUH, Geon Yeop LEE, Jung Pyo HONG
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Patent number: 10192881Abstract: A semiconductor device includes gate stacks disposed on a substrate and spaced apart from each other in a first direction, with a separation region interposed between the gate stacks; channel regions penetrating through the gate stacks and disposed within each of the gate stacks; and a guide region adjacent to the separation region, penetrating through at least a portion of the gate stack, and having a bent portion that is bent toward the separation region.Type: GrantFiled: August 31, 2015Date of Patent: January 29, 2019Assignee: Samsung Electronics Co., Ltd.Inventors: Sang Wuk Park, Hyuk Kim, Kyoung Sub Shin, Gang Zhang
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Publication number: 20160233233Abstract: A semiconductor device includes a substrate having an upper surface extended in first and second directions perpendicular to each other, gate stack portions spaced apart from each other in the first direction, the gate stack portions including gate electrodes spaced apart from each other in a direction perpendicular to the an upper surface of the substrate and having lateral surfaces extended in the second direction to have a zigzag form, channel regions penetrating through the gate stack portions and disposed to form columns having a zigzag form in the second direction, at least two channel regions among the channel regions being linearly arranged in the first direction within the respective gate stack portion, and a source region disposed between the gate stack portions adjacent to each other and extended in the second direction to have a zigzag form.Type: ApplicationFiled: April 21, 2016Publication date: August 11, 2016Inventors: HYUK KIM, Sang Wuk Park, Kyoung Sub Shin
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Patent number: 9349747Abstract: A semiconductor device includes a substrate having an upper surface extended in first and second directions perpendicular to each other, gate stack portions spaced apart from each other in the first direction, the gate stack portions including gate electrodes spaced apart from each other in a direction perpendicular to the an upper surface of the substrate and having lateral surfaces extended in the second direction to have a zigzag form, channel regions penetrating through the gate stack portions and disposed to form columns having a zigzag form in the second direction, at least two channel regions among the channel regions being linearly arranged in the first direction within the respective gate stack portion, and a source region disposed between the gate stack portions adjacent to each other and extended in the second direction to have a zigzag form.Type: GrantFiled: April 2, 2015Date of Patent: May 24, 2016Assignee: Samsung Electronics Co., Ltd.Inventors: Hyuk Kim, Sang Wuk Park, Kyoung Sub Shin
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Publication number: 20160071855Abstract: A semiconductor device includes gate stacks disposed on a substrate and spaced apart from each other in a first direction, with a separation region interposed between the gate stacks; channel regions penetrating through the gate stacks and disposed within each of the gate stacks; and a guide region adjacent to the separation region, penetrating through at least a portion of the gate stack, and having a bent portion that is bent toward the separation region.Type: ApplicationFiled: August 31, 2015Publication date: March 10, 2016Inventors: Sang Wuk Park, Hyuk Kim, Kyoung Sub Shin, Gang Zhang
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Publication number: 20160064407Abstract: A semiconductor device includes a substrate having an upper surface extended in first and second directions perpendicular to each other, gate stack portions spaced apart from each other in the first direction, the gate stack portions including gate electrodes spaced apart from each other in a direction perpendicular to the an upper surface of the substrate and having lateral surfaces extended in the second direction to have a zigzag form, channel regions penetrating through the gate stack portions and disposed to form columns having a zigzag form in the second direction, at least two channel regions among the channel regions being linearly arranged in the first direction within the respective gate stack portion, and a source region disposed between the gate stack portions adjacent to each other and extended in the second direction to have a zigzag form.Type: ApplicationFiled: April 2, 2015Publication date: March 3, 2016Inventors: Hyuk Kim, Sang Wuk Park, Kyoung Sub Shin
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Patent number: 8872059Abstract: Provided is an etching system and a method of controlling etching process condition. The etching system includes a light source that irradiates incident light into a target wafer, a light intensity measuring unit that measures light intensity according to the wavelength of interference light generated by interference between reflected light beams from the target wafer, a signal processor that detects a time point at which an extreme value in the intensity is generated when the intensity of interference light varies according to the wavelength, and a controller that compares the extreme value generating time point detected from the signal processor with a reference time point corresponding to the extreme value generating time point and controls a process condition according to the comparison result.Type: GrantFiled: August 29, 2011Date of Patent: October 28, 2014Assignee: Samsung Electronics Co., Ltd.Inventors: Sang-Wuk Park, Geum-Jung Seong, Kye-Hyun Baek, Yong-Jin Kim, Chan-Mi Lee
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Patent number: 8304264Abstract: A chamber-status monitoring apparatus includes a plurality of chambers, a time-division multiplexer configured to receive, via optical fiber probes, optical signals from each chamber, to divide each optical signal into first time slots having a predetermined duration, and to multiplex the first time slots to generate an OTDM signal, a multi-input optical emission spectroscope configured to receive and disperse the OTDM signal according to wavelengths to measure spectrum information, and a controller configured to divide the spectrum information of the dispersed OTDM signal into second time slots with a predetermined time interval therebetween, to classify the second time slots according to the chambers to obtain spectrum information of the optical signals of the individual chambers, and to control endpoint detection in each of the chambers in accordance with the spectrum information of the optical signal of the corresponding chamber.Type: GrantFiled: August 18, 2010Date of Patent: November 6, 2012Assignee: Samsung Electronics, Co., Ltd.Inventors: Sang-Wuk Park, Woo-Seok Kim, Yong-Jin Kim
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Publication number: 20120055908Abstract: Provided is an etching system and a method of controlling etching process condition. The etching system includes a light source that irradiates incident light into a target wafer, a light intensity measuring unit that measures light intensity according to the wavelength of interference light generated by interference between reflected light beams from the target wafer, a signal processor that detects a time point at which an extreme value in the intensity is generated when the intensity of interference light varies according to the wavelength, and a controller that compares the extreme value generating time point detected from the signal processor with a reference time point corresponding to the extreme value generating time point and controls a process condition according to the comparison result.Type: ApplicationFiled: August 29, 2011Publication date: March 8, 2012Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Sang-Wuk Park, Geum-Jung Seong, Kye-Hyun Baek, Yong-Jin Kim, Chan-Mi Lee
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Publication number: 20110063128Abstract: A chamber-status monitoring apparatus includes a plurality of chambers, a time-division multiplexer configured to receive, via optical fiber probes, optical signals from each chamber, to divide each optical signal into first time slots having a predetermined duration, and to multiplex the first time slots to generate an OTDM signal, a multi-input optical emission spectroscope configured to receive and disperse the OTDM signal according to wavelengths to measure spectrum information, and a controller configured to divide the spectrum information of the dispersed OTDM signal into second time slots with a predetermined time interval therebetween, to classify the second time slots according to the chambers to obtain spectrum information of the optical signals of the individual chambers, and to control endpoint detection in each of the chambers in accordance with the spectrum information of the optical signal of the corresponding chamber.Type: ApplicationFiled: August 18, 2010Publication date: March 17, 2011Inventors: Sang-Wuk Park, Woo-Seok Kim, Yong-Jin Kim