Patents by Inventor Sanjeev Kaushal
Sanjeev Kaushal has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7526699Abstract: A method of monitoring a processing system in real-time using low-pressure based modeling techniques that include processing one or more of wafers in a processing chamber, calculating dynamic estimation errors for the precursor and/or purging process, and determining if the dynamic estimation errors can be associated with pre-existing BIST rules for the process. When the dynamic estimation error cannot be associated with a pre-existing BIST rule, the method includes either modifying the BIST table by creating a new BIST rule for the process, or stopping the process when a new BIST rule cannot be created.Type: GrantFiled: March 31, 2006Date of Patent: April 28, 2009Assignee: Tokyo Electron LimitedInventors: Sanjeev Kaushal, Pradeep Pandey, Kenji Sugishima
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Patent number: 7519885Abstract: A method of monitoring a processing system in real-time using low-pressure based modeling techniques that include processing one or more of wafers in a processing chamber; determining a measured dynamic process response for a rate of change for a process parameter; executing a real-time dynamic model to generate a predicted dynamic process response; determining a dynamic estimation error using a difference between the predicted dynamic process response and the expected process response; and comparing the dynamic estimation error to operational limits.Type: GrantFiled: March 31, 2006Date of Patent: April 14, 2009Assignee: Tokyo Electron LimitedInventors: Sanjeev Kaushal, Pradeep Pandey, Kenji Sugishima
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Patent number: 7459175Abstract: An adaptive real time thermal processing system is presented that includes a multivariable controller. The method includes creating a dynamic model of the MLD processing system and incorporating virtual sensors in the dynamic model. The method includes using process recipes comprising intelligent set points, dynamic models, and/or virtual sensors.Type: GrantFiled: January 26, 2005Date of Patent: December 2, 2008Assignee: Tokyo Electron LimitedInventors: Sanjeev Kaushal, Pradeep Pandey, Kenji Sugishima
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Patent number: 7452793Abstract: A method of determining wafer curvature in real-time is presented. The method includes establishing a first temperature profile for a hotplate surface, where the hotplate surface is divided into a plurality of temperature control zones. The method further includes positioning a wafer at a first height above the hotplate surface and determining a second temperature profile for the hotplate surface. The wafer curvature is then determined by using the second temperature profile. Also, a dynamic model of a processing system is presented and wafer curvature can be incorporated into the dynamic model.Type: GrantFiled: March 30, 2005Date of Patent: November 18, 2008Assignee: Tokyo Electron LimitedInventors: Sanjeev Kaushal, Kenji Sugishima, Pradeep Pandey
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Patent number: 7444572Abstract: A method of creating and/or modifying a built-in self test (BIST) table for monitoring a thermal processing system in real-time that includes positioning a plurality of wafers in a processing chamber in the thermal processing system; executing a real-time dynamic model to generate a predicted dynamic process response; creating a measured dynamic process response; determining a dynamic estimation error; determining if the determined dynamic estimation error can be associated with a pre-existing BIST rule in the BIST table; creating a new BIST rule when the dynamic estimation error cannot be associated with any pre-existing BIST rule in the BIST table; and stopping the process when a new BIST rule cannot be created.Type: GrantFiled: September 1, 2005Date of Patent: October 28, 2008Assignee: Tokyo Electron LimitedInventors: Sanjeev Kaushal, Pradeep Pandey, Kenji Sugishima
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Patent number: 7406644Abstract: A method of monitoring a thermal processing system in real-time using a built-in self test (BIST) table to detect, diagnose and/or predict fault conditions and/or degraded performance. The method includes positioning a plurality of wafers in a processing chamber in the thermal processing system, performing a self test process, determining a real-time transient error from a measured transient response and a baseline transient response determined by a BIST rule stored in the BIST table, and comparing the transient error to operational limits and warning limits established by the BIST rule for the self test process.Type: GrantFiled: March 30, 2006Date of Patent: July 29, 2008Assignee: Tokyo Electron LimitedInventors: Sanjeev Kaushal, Pradeep Pandey, Kenji Sugishima
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Patent number: 7342244Abstract: A semiconductor device including: a substrate comprising silicon; a channel region formed on the substrate; a spin injector formed on the substrate at a first side of the channel region and configured to diffuse a spin-polarized current into the channel region; a spin detector formed on the substrate at a second side of the channel region and configured to receive the spin polarized current from the channel region; and a gate formed on the substrate in an area of the channel region.Type: GrantFiled: July 19, 2006Date of Patent: March 11, 2008Assignee: Tokyo Electron LimitedInventors: Sanjeev Kaushal, Kenji Sugishima, Swaroop Ganguly
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Patent number: 7340377Abstract: A method of monitoring a single-wafer processing system in real-time using low-pressure based modeling techniques that include processing a wafer in a processing chamber; determining a measured dynamic process response for a rate of change for a process parameter; executing a real-time dynamic model to generate a predicted dynamic process response; determining a dynamic estimation error using a difference between the predicted dynamic process response and the expected process response; and comparing the dynamic estimation error to operational limits.Type: GrantFiled: July 6, 2006Date of Patent: March 4, 2008Assignee: Tokyo Electron LimitedInventors: Sanjeev Kaushal, Pradeep Pandey, Kenji Sugishima
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Publication number: 20080017843Abstract: A semiconductor device including: a substrate comprising silicon; a channel region formed on the substrate; a spin injector formed on the substrate at a first side of the channel region and configured to diffuse a spin-polarized current into the channel region; a spin detector formed on the substrate at a second side of the channel region and configured to receive said spin polarized current from the channel region; and a gate formed on the substrate in an area of said channel region.Type: ApplicationFiled: July 19, 2006Publication date: January 24, 2008Applicant: TOKYO ELECTRON LIMITEDInventors: Sanjeev Kaushal, Kenji Sugishima, Swaroop Ganguly
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Patent number: 7302363Abstract: A method of monitoring a processing system in real-time using low-pressure based modeling techniques that include processing one or more of wafers in a processing chamber; determining a measured dynamic process response for a rate of change for a process parameter; executing a real-time dynamic model to generate a predicted dynamic process response; determining a dynamic estimation error using a difference between the predicted dynamic process response and the expected process response; and comparing the dynamic estimation error to operational limits.Type: GrantFiled: March 31, 2006Date of Patent: November 27, 2007Assignee: Tokyo Electron LimitedInventors: Sanjeev Kaushal, Pradeep Pandey, Kenji Sugishima
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Publication number: 20070259285Abstract: A method of monitoring a processing system in real-time using low-pressure based modeling techniques that include processing one or more of wafers in a processing chamber, calculating dynamic estimation errors for the precursor and/or purging process, and determining if the dynamic estimation errors can be associated with pre-existing BIST rules for the process. When the dynamic estimation error cannot be associated with a pre-existing BIST rule, the method includes either modifying the BIST table by creating a new BIST rule for the process, or stopping the process when a new BIST rule cannot be created.Type: ApplicationFiled: March 31, 2006Publication date: November 8, 2007Applicant: Tokyo Electron LimitedInventors: Sanjeev Kaushal, Pradeep Pandey, Kenji Sugishima
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Publication number: 20070255991Abstract: A method of monitoring a thermal processing system in real-time using a built-in self test (BIST) table to detect, diagnose and/or predict fault conditions and/or degraded performance. The method includes positioning a plurality of wafers in a processing chamber in the thermal processing system, performing a self test process, determining a real-time transient error from a measured transient response and a baseline transient response determined by a BIST rule stored in the BIST table, and comparing the transient error to operational limits and warning limits established by the BIST rule for the self test process.Type: ApplicationFiled: March 30, 2006Publication date: November 1, 2007Applicant: Tokyo Electron LimitedInventors: Sanjeev Kaushal, Pradeep Pandey, Kenji Sugishima
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Publication number: 20070234953Abstract: A method of monitoring a processing system in real-time using low-pressure based modeling techniques that include processing one or more of wafers in a processing chamber; determining a measured dynamic process response for a rate of change for a process parameter; executing a real-time dynamic model to generate a predicted dynamic process response; determining a dynamic estimation error using a difference between the predicted dynamic process response and the expected process response; and comparing the dynamic estimation error to operational limits.Type: ApplicationFiled: March 31, 2006Publication date: October 11, 2007Applicant: Tokyo Electron LimitedInventors: Sanjeev Kaushal, Pradeep Pandey, Kenji Sugishima
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Publication number: 20070239375Abstract: A method of monitoring a processing system in real-time using low-pressure based modeling techniques that include processing one or more of wafers in a processing chamber; determining a measured dynamic process response for a rate of change for a process parameter; executing a real-time dynamic model to generate a predicted dynamic process response; determining a dynamic estimation error using a difference between the predicted dynamic process response and the expected process response; and comparing the dynamic estimation error to operational limits.Type: ApplicationFiled: March 31, 2006Publication date: October 11, 2007Applicant: Tokyo Electron LimitedInventors: Sanjeev Kaushal, Pradeep Pandey, Kenji Sugishima
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Publication number: 20070233427Abstract: A method of monitoring a single-wafer processing system in real-time using low-pressure based modeling techniques that include processing a wafer in a processing chamber; determining a measured dynamic process response for a rate of change for a process parameter; executing a real-time dynamic model to generate a predicted dynamic process response; determining a dynamic estimation error using a difference between the predicted dynamic process response and the expected process response; and comparing the dynamic estimation error to operational limits.Type: ApplicationFiled: July 6, 2006Publication date: October 4, 2007Applicant: TOKYO ELECTRON LIMITEDInventors: Sanjeev Kaushal, Pradeep Pandey, Kenji Sugishima
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Publication number: 20070224712Abstract: A method and system for non-invasive sensing and monitoring of a processing system employed in semiconductor manufacturing. The method allows for detecting and diagnosing drift and failures in the processing system and taking the appropriate correcting measures. The method includes positioning at least one non-invasive sensor on an outer surface of a system component of the processing system, where the at least one invasive sensor forms a wireless sensor network, acquiring a sensor signal from the at least one non-invasive sensor, where the sensor signal tracks a gradual or abrupt change in a processing state of the system component during flow of a process gas in contact with the system component, and extracting the sensor signal from the wireless sensor network to store and process the sensor signal. In one embodiment, the non-invasive sensor can be an accelerometer sensor and the wireless sensor network can be motes-based.Type: ApplicationFiled: March 24, 2006Publication date: September 27, 2007Applicant: Tokyo Electron LimitedInventors: Sanjeev Kaushal, Kenji Sugishima, Donthineni Rao
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Publication number: 20070221125Abstract: A method and system for non-invasive sensing and monitoring of a processing system employed in semiconductor manufacturing. The method allows for detecting and diagnosing drift and failures in the processing system and taking the appropriate correcting measures. The method includes positioning at least one non-invasive sensor on an outer surface of a system component of the processing system, where the at least one invasive sensor forms a wireless sensor network, acquiring a sensor signal from the at least one non-invasive sensor, where the sensor signal tracks a gradual or abrupt change in a processing state of the system component during flow of a process gas in contact with the system component, and extracting the sensor signal from the wireless sensor network to store and process the sensor signal. In one embodiment, the non-invasive sensor can be an accelerometer sensor and the wireless sensor network can be motes-based.Type: ApplicationFiled: March 24, 2006Publication date: September 27, 2007Applicant: Tokyo Electron LimitedInventors: Sanjeev Kaushal, Kenji Sugishima, Donthineni Rao
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Publication number: 20070061652Abstract: A method of creating and/or modifying a built-in self test (BIST) table for monitoring a thermal processing system in real-time that includes positioning a plurality of wafers in a processing chamber in the thermal processing system; executing a real-time dynamic model to generate a predicted dynamic process response; creating a measured dynamic process response; determining a dynamic estimation error; determining if the determined dynamic estimation error can be associated with a pre-existing BIST rule in the BIST table; creating a new BIST rule when the dynamic estimation error cannot be associated with any pre-existing BIST rule in the BIST table; and stopping the process when a new BIST rule cannot be created.Type: ApplicationFiled: September 1, 2005Publication date: March 15, 2007Applicant: Tokyo Electron Limited, TBS Broadcast CenterInventors: Sanjeev Kaushal, Pradeep Pandey, Kenji Sugishima
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Patent number: 7165011Abstract: A method of monitoring a thermal processing system in real-time using a built-in self test (BIST) table that includes positioning a plurality of wafers in a processing chamber in the thermal processing system; executing a real-time dynamic model to generate a predicted dynamic process response for the processing chamber during the processing time; creating a first measured dynamic process response; determining a dynamic estimation error using a difference between the predicted dynamic process response and the measured dynamic process response; and comparing the dynamic estimation error to operational thresholds established by one or more rules in the BIST table.Type: GrantFiled: September 1, 2005Date of Patent: January 16, 2007Assignee: Tokyo Electron LimitedInventors: Sanjeev Kaushal, Pradeep Pandey, Kenji Sugishima, Anthony Dip, David Smith, Raymond Joe, Sundar Gandhi
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Patent number: 7141765Abstract: A antireflective film 50 is formed on a thermocouple 42 arranged in a processing vessel 1 of a heat treatment apparatus in order to improve the transient response characteristics of the thermocouple 42. In a typical embodiment, the thermocouple 42 is made by connecting a platinum wire 43A and a platinum-rhodium alloy wire 43B, and the antireflective film 50 is composed by stacking a silicon nitride layer 50C, silicon layer 50B and a silicon nitride layer 50A in that order.Type: GrantFiled: March 20, 2002Date of Patent: November 28, 2006Assignee: Tokyo Electron LimitedInventors: Toshiyuki Makiya, Takanori Saito, Karuki Eickmann, Sanjeev Kaushal, Anthony Dip, David L. O'meara