Patents by Inventor Sanjeev Kumar Jain
Sanjeev Kumar Jain has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240135983Abstract: Circuits, systems, and methods are described herein for generating a boost voltage for a write operation of a memory cell. In one embodiment, a boost circuit includes a first inverter and a second inverter, each configured to invert a write signal. The boost circuit also includes a transistor and a capacitor. The transistor is coupled to an output of the first inverter. The transistor is configured to charge a capacitor based on the write signal and provide a supply voltage to a write driver. The capacitor is coupled to an output of the second inverter. The capacitor is configured to generate and provide a delta voltage to the write driver.Type: ApplicationFiled: January 2, 2024Publication date: April 25, 2024Inventor: Sanjeev Kumar Jain
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Patent number: 11935589Abstract: Systems and methods are provided for controlling a wake-up operation of a memory circuit. The memory circuit is configured to precharge the bit lines of a memory array sequentially during wakeup. A sleep signal is received by the first bit line of a memory cell and then a designed delay occurs prior to the precharge of a second complementary bit line. The sleep signal may then precharge the bit lines of a second memory cell with further delay between the precharge of each bit line. The memory circuit is configured to precharge both bit lines of a memory cell at the same time when an operation associated with that cell is designated.Type: GrantFiled: March 23, 2023Date of Patent: March 19, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Sanjeev Kumar Jain, Ruchin Jain, Arun Achyuthan, Atul Katoch
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Publication number: 20240087618Abstract: Disclosed herein are related to reducing power consumption of a memory device when transitioning from a sleep state to an operational state. In one aspect, the memory device includes a memory cell to store data. In one aspect, the memory device includes an output driver configured to: generate an output signal indicating the stored data, in response to a sleep tracking signal indicating that the memory cell is in the operational state, and generate the output signal having a predetermined voltage irrespective of the stored data, in response to the sleep tracking signal indicating that the memory cell is in the sleep state. In one aspect, the sleep tracking signal is delayed from a sleep control signal causing the memory cell to operate in the sleep state or the operational state.Type: ApplicationFiled: November 22, 2023Publication date: March 14, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Sanjeev Kumar Jain, Atul Katoch
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Patent number: 11929110Abstract: A memory circuit includes a global control circuit, a first local control circuit, and a first set of word line post-decoder circuits coupled to a first set of memory cells that is configured to store a first set of data. The global control circuit is configured to generate a first and second set of global pre-decoder signals, and a first set of local address signals. The first local control circuit includes a first set of repeater circuits and a first clock pre-decoder circuit. The first set of repeater circuits is configured to generate a first and second set of local pre-decoder signals in response to the corresponding first and second set of global pre-decoder signals. The first clock pre-decoder circuit is configured to generate a first and second set of clock signals in response to the first set of local address signals and the first clock signal.Type: GrantFiled: May 17, 2022Date of Patent: March 12, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Sanjeev Kumar Jain, Ishan Khera, Atul Katoch
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Publication number: 20240069794Abstract: Systems and method are provided for operating a multi-array memory that includes a left memory array and a right memory array of a memory bank. A command is received at memory input pins. A signal representative of the command is propagated to an array control inhibitor. An array inhibit command is received on one or more other pins of the memory and provided to the array control inhibitor. The array control inhibitor is used to prevent arrival of the command to one of the left memory array and the right memory array based on the array inhibit command.Type: ApplicationFiled: November 7, 2023Publication date: February 29, 2024Inventors: Sanjeev Kumar Jain, Cormac Michael O'Connell
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Publication number: 20240071481Abstract: Systems and methods are provided for a memory device. A memory device includes a memory array, a column selection circuit coupled to the memory array, where the column selection circuit is configured to generate a column selection signal, and a sense amplifier configured to receive data signals from the memory array. An enable signal generating circuit is configured to generate a first enable signal and a second enable signal. The column selection circuit generates the column selection signal based on the first enable signal, and the sense amplifier is configured to receive a data signal from the memory array in response to the second enable signal.Type: ApplicationFiled: November 7, 2023Publication date: February 29, 2024Inventor: Sanjeev Kumar Jain
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Patent number: 11915789Abstract: Systems and methods are provided for controlling a sleep operation for a memory array. A memory system may include a memory array with a memory cell and a word line driver, the memory array receiving a word line clock signal that enables and disables memory read and write operations of the memory cell. The memory array may further including a switching circuit coupled between the word line driver and a power source, the switching circuit being controlled by a local word line sleep signal to turn power to the word line driver on and off. A latch circuit may generate the local word line sleep signal in response to a delayed clock signal and one or more power management control signals. The word line clock signal and the delayed clock signal may both being generated as a function of a memory clock signal.Type: GrantFiled: June 24, 2022Date of Patent: February 27, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventor: Sanjeev Kumar Jain
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Patent number: 11881250Abstract: Circuits, systems, and methods are described herein for generating a boost voltage for a write operation of a memory cell. In one embodiment, a boost circuit includes a first inverter and a second inverter, each configured to invert a write signal. The boost circuit also includes a transistor and a capacitor. The transistor is coupled to an output of the first inverter. The transistor is configured to charge a capacitor based on the write signal and provide a supply voltage to a write driver. The capacitor is coupled to an output of the second inverter. The capacitor is configured to generate and provide a delta voltage to the write driver.Type: GrantFiled: May 6, 2022Date of Patent: January 23, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventor: Sanjeev Kumar Jain
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Patent number: 11875843Abstract: Systems and methods are provided for a memory device. A memory device includes a memory array, a column selection circuit coupled to the memory array, where the column selection circuit is configured to generate a column selection signal, and a sense amplifier configured to receive data signals from the memory array. An enable signal generating circuit is configured to generate a first enable signal and a second enable signal. The column selection circuit generates the column selection signal based on the first enable signal, and the sense amplifier is configured to receive a data signal from the memory array in response to the second enable signal.Type: GrantFiled: January 5, 2021Date of Patent: January 16, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventor: Sanjeev Kumar Jain
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Patent number: 11854587Abstract: Disclosed herein are related to reducing power consumption of a memory device when transitioning from a sleep state to an operational state. In one aspect, the memory device includes a memory cell to store data. In one aspect, the memory device includes an output driver configured to: generate an output signal indicating the stored data, in response to a sleep tracking signal indicating that the memory cell is in the operational state, and generate the output signal having a predetermined voltage irrespective of the stored data, in response to the sleep tracking signal indicating that the memory cell is in the sleep state. In one aspect, the sleep tracking signal is delayed from a sleep control signal causing the memory cell to operate in the sleep state or the operational state.Type: GrantFiled: April 6, 2022Date of Patent: December 26, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Sanjeev Kumar Jain, Atul Katoch
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Patent number: 11847345Abstract: Systems and method are provided for operating a multi-array memory that includes a left memory array and a right memory array of a memory bank. A command is received at memory input pins. A signal representative of the command is propagated to an array control inhibitor. An array inhibit command is received on one or more other pins of the memory and provided to the array control inhibitor. The array control inhibitor is used to prevent arrival of the command to one of the left memory array and the right memory array based on the array inhibit command.Type: GrantFiled: June 28, 2022Date of Patent: December 19, 2023Assignee: Taiwan Semiconductor Manufacturing Company LimitedInventors: Sanjeev Kumar Jain, Cormac Michael O'Connell
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Publication number: 20230386537Abstract: Systems and methods are provided for controlling a wake-up operation of a memory circuit. The memory circuit may include a memory array with a plurality of memory cells, first logic circuitry, first switching circuitry, first latch circuitry, and second switching circuitry. The first logic circuitry may be configured to generate a first bit line pre-charge signal for a first memory cell of the plurality of memory cells, where the first bit line pre-charge signal is generated in response to a sleep signal. The first switching circuitry may be configured to provide power to one or more bit line of the first memory cell in response to the first bit line pre-charge signal. The first latch circuit may receive the sleep signal and the first bit line pre-charge signal and generate a delayed sleep signal.Type: ApplicationFiled: August 9, 2023Publication date: November 30, 2023Inventors: Sanjeev Kumar Jain, Sahil Preet Singh, Atul Katoch
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Publication number: 20230326492Abstract: Systems and methods are provided for controlling power down of an integrated dual rail memory circuit. The power down system is configured to power down the power rail for input and logic components (VDD) while maintaining power to the power rail for the memory cells (VDDM). The power down system includes two voltage rails, a clock generator, and a power detector for detecting the power on VDD. The power detector generates an isolated power signal when voltage on VDD is below a voltage threshold. The isolated power signal is configured to disable the clock generator and thus reduce dynamic power as the read/write cycle is not triggered during power down.Type: ApplicationFiled: June 5, 2023Publication date: October 12, 2023Inventor: Sanjeev Kumar Jain
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Publication number: 20230298662Abstract: Circuits and methods are described herein for controlling a bit line precharge circuit. For example, a control circuit includes a first latch circuit and a second latch circuit. The first latch circuit is configured to receive a first light sleep signal. The first latch circuit generates a second light sleep signal according to a clock signal. The second latch circuit is configured to receive the second light sleep signal. The second latch circuit generates a third light sleep signal according to a sense amplifier enable signal. The second latch circuit provides the third light sleep signal to a bit line reading switch, so the bit line reading switch is cutoff after a sense amplifier is enabled.Type: ApplicationFiled: May 30, 2023Publication date: September 21, 2023Inventor: Sanjeev Kumar Jain
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Patent number: 11763863Abstract: Systems and methods are provided for controlling a wake-up operation of a memory circuit. The memory circuit may include a memory array with a plurality of memory cells, first logic circuitry, first switching circuitry, first latch circuitry, and second switching circuitry. The first logic circuitry may be configured to generate a first bit line pre-charge signal for a first memory cell of the plurality of memory cells, where the first bit line pre-charge signal is generated in response to a sleep signal. The first switching circuitry may be configured to provide power to one or more bit line of the first memory cell in response to the first bit line pre-charge signal. The first latch circuit may receive the sleep signal and the first bit line pre-charge signal and generate a delayed sleep signal.Type: GrantFiled: April 18, 2022Date of Patent: September 19, 2023Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Sanjeev Kumar Jain, Sahil Preet Singh, Atul Katoch
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Publication number: 20230223076Abstract: Systems and methods are provided for controlling a wake-up operation of a memory circuit. The memory circuit is configured to precharge the bit lines of a memory array sequentially during wakeup. A sleep signal is received by the first bit line of a memory cell and then a designed delay occurs prior to the precharge of a second complementary bit line. The sleep signal may then precharge the bit lines of a second memory cell with further delay between the precharge of each bit line. The memory circuit is configured to precharge both bit lines of a memory cell at the same time when an operation associated with that cell is designated.Type: ApplicationFiled: March 23, 2023Publication date: July 13, 2023Inventors: Sanjeev Kumar Jain, Ruchin Jain, Arun Achyuthan, Atul Katoch
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Patent number: 11682434Abstract: Systems and methods are provided for controlling power down of an integrated dual rail memory circuit. The power down system is configured to power down the power rail for input and logic components (VDD) while maintaining power to the power rail for the memory cells (VDDM). The power down system includes two voltage rails, a clock generator, and a power detector for detecting the power on VDD. The power detector generates an isolated power signal when voltage on VDD is below a voltage threshold. The isolated power signal is configured to disable the clock generator and thus reduce dynamic power as the read/write cycle is not triggered during power down.Type: GrantFiled: December 14, 2021Date of Patent: June 20, 2023Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventor: Sanjeev Kumar Jain
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Publication number: 20230178122Abstract: Disclosed herein are related to reducing power consumption of a memory device when transitioning from a sleep state to an operational state. In one aspect, the memory device includes a memory cell to store data. In one aspect, the memory device includes an output driver configured to: generate an output signal indicating the stored data, in response to a sleep tracking signal indicating that the memory cell is in the operational state, and generate the output signal having a predetermined voltage irrespective of the stored data, in response to the sleep tracking signal indicating that the memory cell is in the sleep state. In one aspect, the sleep tracking signal is delayed from a sleep control signal causing the memory cell to operate in the sleep state or the operational state.Type: ApplicationFiled: April 6, 2022Publication date: June 8, 2023Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Sanjeev Kumar Jain, Atul Katoch
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Patent number: 11670365Abstract: Circuits and methods are described herein for controlling a bit line precharge circuit. For example, a control circuit includes a first latch circuit and a second latch circuit. The first latch circuit is configured to receive a first light sleep signal. The first latch circuit generates a second light sleep signal according to a clock signal. The second latch circuit is configured to receive the second light sleep signal. The second latch circuit generates a third light sleep signal according to a sense amplifier enable signal. The second latch circuit provides the third light sleep signal to a bit line reading switch, so the bit line reading switch is cutoff after a sense amplifier is enabled.Type: GrantFiled: September 8, 2021Date of Patent: June 6, 2023Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventor: Sanjeev Kumar Jain
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Publication number: 20230170010Abstract: A memory circuit includes a global control circuit, a first local control circuit, and a first set of word line post-decoder circuits coupled to a first set of memory cells that is configured to store a first set of data. The global control circuit is configured to generate a first and second set of global pre-decoder signals, and a first set of local address signals. The first local control circuit includes a first set of repeater circuits and a first clock pre-decoder circuit. The first set of repeater circuits is configured to generate a first and second set of local pre-decoder signals in response to the corresponding first and second set of global pre-decoder signals. The first clock pre-decoder circuit is configured to generate a first and second set of clock signals in response to the first set of local address signals and the first clock signal.Type: ApplicationFiled: May 17, 2022Publication date: June 1, 2023Inventors: Sanjeev Kumar JAIN, Ishan KHERA, Atul KATOCH