Patents by Inventor Santhosh Balachandran

Santhosh Balachandran has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device having multiple-zone junction termination extension, and method for fabricating the same
    Patent number: 7144797
    Abstract: A semiconductor device includes a graded junction termination extension. A method for fabricating the device includes providing a semiconductor layer having a pn junction, providing a mask layer adjacent to the semiconductor layer, etching the mask layer to form at least two laterally adjacent steps associated with different mask thicknesses and substantially planar step surfaces, and implanting a dopant species through the mask layer into a portion of the semiconductor layer adjacent to the termination of the pn junction. The semiconductor layer is annealed to activate at least a portion of the implanted dopant species to form the graded junction termination extension.
    Type: Grant
    Filed: September 24, 2004
    Date of Patent: December 5, 2006
    Assignee: Rensselaer Polytechnic Institute
    Inventors: Tat-Sing Paul Chow, Peter Losee, Santhosh Balachandran
  • Semiconductor device having multiple-zone junction termination extension, and method for fabricating the same
    Publication number: 20060068571
    Abstract: A semiconductor device includes a graded junction termination extension. A method for fabricating the device includes providing a semiconductor layer having a pn junction, providing a mask layer adjacent to the semiconductor layer, etching the mask layer to form at least two laterally adjacent steps associated with different mask thicknesses and substantially planar step surfaces, and implanting a dopant species through the mask layer into a portion of the semiconductor layer adjacent to the termination of the pn junction. The semiconductor layer is annealed to activate at least a portion of the implanted dopant species to form the graded junction termination extension.
    Type: Application
    Filed: September 24, 2004
    Publication date: March 30, 2006
    Applicant: Rensselaer Polytechnic Institute
    Inventors: Tat-Sing Chow, Peter Losee, Santhosh Balachandran