Patents by Inventor Santosh Hariharan

Santosh Hariharan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • High precision and highly efficient tuning mechanisms and algorithms for analog neuromorphic memory in artificial neural networks
    Patent number: 10748630
    Abstract: An artificial neural network device that utilizes analog neuromorphic memory that comprises one or more non-volatile memory arrays. The embodiments comprise improved mechanisms and algorithms for tuning the non-volatile memory arrays such that the floating gates of the memory cells can be quickly and accurately injected with the desired amount of charge to signify an analog value utilized as a weight by the artificial neural network.
    Type: Grant
    Filed: November 29, 2017
    Date of Patent: August 18, 2020
    Assignee: SILICON STORAGE TECHNOLOGY, INC.
    Inventors: Hieu Van Tran, Vipin Tiwari, Nhan Do, Steven Lemke, Santosh Hariharan, Stanley Hong
  • High Precision And Highly Efficient Tuning Mechanisms And Algorithms For Analog Neuromorphic Memory In Artificial Neural Networks
    Publication number: 20190164617
    Abstract: An artificial neural network device that utilizes analog neuromorphic memory that comprises one or more non-volatile memory arrays. The embodiments comprise improved mechanisms and algorithms for tuning the non-volatile memory arrays such that the floating gates of the memory cells can be quickly and accurately injected with the desired amount of charge to signify an analog value utilized as a weight by the artificial neural network.
    Type: Application
    Filed: November 29, 2017
    Publication date: May 30, 2019
    Inventors: Hieu Van Tran, Vipin Tiwari, Nhan Do, Steven Lemke, Santosh Hariharan, Stanley Hong
  • Resistive random access memory (RRAM) cell filament formation using current waveforms
    Patent number: 10276236
    Abstract: A memory device includes a metal oxide material disposed between and in electrical contact with first and second conductive electrodes, and an electrical current source configured to apply one or more electrical current pulses through the metal oxide material. For each of the one or more electrical current pulses, an amplitude of the electrical current increases over time during the electrical current pulse to form a conductive filament in metal oxide material.
    Type: Grant
    Filed: May 17, 2017
    Date of Patent: April 30, 2019
    Assignees: Silicon Storage Technology, Inc., Agency For Science, Technology, And Research
    Inventors: Santosh Hariharan, Hieu Van Tran, Feng Zhou, Xian Liu, Steven Lemke, Nhan Do, Zhixian Chen, Xinpeng Wang
  • Method of Forming Resistive Random Access Memory (RRAM) Cells
    Publication number: 20180145253
    Abstract: A method of forming a memory device includes forming a first layer of conductive material having opposing upper and lower surfaces, forming a layer of amorphous silicon on the upper surface of the first layer of conductive material, stripping away the layer of amorphous silicon, wherein some of the amorphous silicon remains in the upper surface of the first layer of conductive material, forming a layer of transition metal oxide material on the upper surface of the first layer of conductive material, and forming a second layer of conductive material on the layer of transition metal oxide material. The method smoothes the upper surface of the bottom electrode, and also provides an bottom electrode upper surface with stable material that is hard to oxidize.
    Type: Application
    Filed: October 9, 2017
    Publication date: May 24, 2018
    Inventors: Feng Zhou, Xian Liu, Steven Lemke, Santosh Hariharan, Hieu Van Tran, Nhan Do
  • Current Forming Of Resistive Random Access Memory (RRAM) Cell Filament
    Publication number: 20180033482
    Abstract: A memory device includes a metal oxide material disposed between and in electrical contact with first and second conductive electrodes, and an electrical current source configured to apply one or more electrical current pulses through the metal oxide material. For each of the one or more electrical current pulses, an amplitude of the electrical current increases over time during the electrical current pulse to form a conductive filament in metal oxide material.
    Type: Application
    Filed: May 17, 2017
    Publication date: February 1, 2018
    Inventors: Santosh Hariharan, Hieu Van Tran, Feng Zhou, Xian Liu, Steven Lemke, Nhan Do, Zhixian Chen, Xinpeng Wang