Patents by Inventor Saptarshi Basu
Saptarshi Basu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11031262Abstract: Implementations disclosed herein describe a bevel etch apparatus within a loadlock bevel etch chamber and methods of using the same. The bevel etch apparatus has a mask assembly within the loadlock bevel etch chamber. During an etch process, the mask assembly delivers a gas flow to control bevel etch without the use of a shadow frame. As such, the edge exclusion at the bevel edge can be reduced, thus increasing product yield.Type: GrantFiled: April 2, 2020Date of Patent: June 8, 2021Assignee: Applied Materials, Inc.Inventors: Saptarshi Basu, Jeongmin Lee, Paul Connors, Dale R. Du Bois, Prashant Kumar Kulshreshtha, Karthik Thimmavajjula Narasimha, Brett Berens, Kalyanjit Ghosh, Jianhua Zhou, Ganesh Balasubramanian, Kwangduk Douglas Lee, Juan Carlos Rocha-Alvarez, Hiroyuki Ogiso, Liliya Krivulina, Rick Gilbert, Mohsin Waqar, Venkatanarayana Shankaramurthy, Hari K. Ponnekanti
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Publication number: 20210140640Abstract: Present disclosure relates to a injector, which comprises a first lance, provisioned with at least one first inlet port, to receive a first fluid. Further, a second lance is coaxially disposed within the first lance, and provisioned with at least one second inlet port, to receive a second fluid. The injector further includes a tube member, disposable within the second lance to receive the first fluid at one end, while sealed at another end. The tube member is provisioned with at least one recess for the first fluid in the tube member to mix with the second fluid and form the effervescent fluid. The effervescent fluid is then dispensed through at least one of a first exit port of the first lance and a second exit port of the second lance. The injector may be employed in applications such as, fuel injection, spray coating and the like.Type: ApplicationFiled: June 12, 2018Publication date: May 13, 2021Inventors: Saptarshi Basu, Kuppuraj Rajamanickam, Swapneel Roy, Swetaprovo Chaudhuri
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Publication number: 20200234982Abstract: Implementations disclosed herein describe a bevel etch apparatus within a loadlock bevel etch chamber and methods of using the same. The bevel etch apparatus has a mask assembly within the loadlock bevel etch chamber. During an etch process, the mask assembly delivers a gas flow to control bevel etch without the use of a shadow frame. As such, the edge exclusion at the bevel edge can be reduced, thus increasing product yield.Type: ApplicationFiled: April 2, 2020Publication date: July 23, 2020Inventors: Saptarshi BASU, Jeongmin LEE, Paul CONNORS, Dale R. DU BOIS, Prashant Kumar KULSHRESHTHA, Karthik Thimmavajjula NARASIMHA, Brett BERENS, Kalyanjit GHOSH, Jianhua ZHOU, Ganesh BALASUBRAMANIAN, Kwangduk Douglas LEE, Juan Carlos ROCHA-ALVAREZ, Hiroyuki OGISO, Liliya KRIVULINA, Rick GILBERT, Mohsin WAQAR, Venkatanarayana SHANKARAMURTHY, Hari K. PONNEKANTI
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Patent number: 10636684Abstract: Implementations disclosed herein describe a bevel etch apparatus within a loadlock bevel etch chamber and methods of using the same. The bevel etch apparatus has a mask assembly within the loadlock bevel etch chamber. During an etch process, the mask assembly delivers a gas flow to control bevel etch without the use of a shadow frame. As such, the edge exclusion at the bevel edge can be reduced, thus increasing product yield.Type: GrantFiled: August 14, 2019Date of Patent: April 28, 2020Assignee: APPLIED MATERIALS, INC.Inventors: Saptarshi Basu, Jeongmin Lee, Paul Connors, Dale R. Du Bois, Prashant Kumar Kulshreshtha, Karthik Thimmavajjula Narasimha, Brett Berens, Kalyanjit Ghosh, Jianhua Zhou, Ganesh Balasubramanian, Kwangduk Douglas Lee, Juan Carlos Rocha-Alvarez, Hiroyuki Ogiso, Liliya Krivulina, Rick Gilbert, Mohsin Waqar, Venkatanarayana Shankaramurthy, Hari K. Ponnekanti
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Publication number: 20190371630Abstract: Implementations disclosed herein describe a bevel etch apparatus within a loadlock bevel etch chamber and methods of using the same. The bevel etch apparatus has a mask assembly within the loadlock bevel etch chamber. During an etch process, the mask assembly delivers a gas flow to control bevel etch without the use of a shadow frame. As such, the edge exclusion at the bevel edge can be reduced, thus increasing product yield.Type: ApplicationFiled: August 14, 2019Publication date: December 5, 2019Inventors: Saptarshi Basu, Jeongmin Lee, Paul Connors, Dale R. Du Bois, Prashant Kumar Kulshreshtha, Karthik Thimmavajjula Narasimha, Brett Berens, Kalyanjit Ghosh, Jianhua Zhou, Ganesh Balasubramanian, Kwangduk Douglas Lee, Juan Carlos Rocha-Alvarez, Hiroyuki Ogiso, Liliya Krivulina, Rick Gilbert, Mohsin Waqar, Venkatanarayana Shankaramurthy, Hari K. Ponnekanti
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Patent number: 10403515Abstract: Implementations disclosed herein describe a bevel etch apparatus within a loadlock bevel etch chamber and methods of using the same. The bevel etch apparatus has a mask assembly within the loadlock bevel etch chamber. During an etch process, the mask assembly delivers a gas flow to control bevel etch without the use of a shadow frame. As such, the edge exclusion at the bevel edge can be reduced, thus increasing product yield.Type: GrantFiled: February 2, 2016Date of Patent: September 3, 2019Assignee: APPLIED MATERIALS, INC.Inventors: Saptarshi Basu, Jeongmin Lee, Paul Connors, Dale R. Du Bois, Prashant Kumar Kulshreshtha, Karthik Thimmavajjula Narasimha, Brett Berens, Kalyanjit Ghosh, Jianhua Zhou, Ganesh Balasubramanian, Kwangduk Douglas Lee, Juan Carlos Rocha-Alvarez, Hiroyuki Ogiso, Liliya Krivulina, Rick Gilbert, Mohsin Waqar, Venkatanarayana Shankaramurthy, Hari K. Ponnekanti
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Patent number: 10373822Abstract: Methods for modulating local stress and overlay error of one or more patterning films may include modulating a gas flow profile of gases introduced into a chamber body, flowing gases within the chamber body toward a substrate, rotating the substrate, and unifying a center-to-edge temperature profile of the substrate by controlling the substrate temperature with a dual zone heater. A chamber for depositing a film may include a chamber body comprising one or more processing regions. The chamber body may include a gas distribution assembly having a blocker plate for delivering gases into the one or more processing regions. The blocker plate may have a first region and a second region, and the first region and second region each may have a plurality of holes. The chamber body may have a dual zone heater.Type: GrantFiled: November 17, 2017Date of Patent: August 6, 2019Assignee: APPLIED MATERIALS, INC.Inventors: Prashant Kumar Kulshreshtha, Sudha Rathi, Praket P. Jha, Saptarshi Basu, Kwangduk Douglas Lee, Martin J. Seamons, Bok Hoen Kim, Ganesh Balasubramanian, Ziqing Duan, Lei Jing, Mandar B. Pandit
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Publication number: 20180096843Abstract: Methods for modulating local stress and overlay error of one or more patterning films may include modulating a gas flow profile of gases introduced into a chamber body, flowing gases within the chamber body toward a substrate, rotating the substrate, and unifying a center-to-edge temperature profile of the substrate by controlling the substrate temperature with a dual zone heater. A chamber for depositing a film may include a chamber body comprising one or more processing regions. The chamber body may include a gas distribution assembly having a blocker plate for delivering gases into the one or more processing regions. The blocker plate may have a first region and a second region, and the first region and second region each may have a plurality of holes. The chamber body may have a dual zone heater.Type: ApplicationFiled: November 17, 2017Publication date: April 5, 2018Inventors: Prashant Kumar Kulshreshtha, Sudha Rathi, Praket P. Jha, Saptarshi Basu, Kwangduk Douglas Lee, Martin J. Seamons, Bok Hoen Kim, Ganesh Balasubramanian, Ziqing Duan, Lei Jing, Mandar B. Pandit
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Patent number: 9837265Abstract: Methods for modulating local stress and overlay error of one or more patterning films may include modulating a gas flow profile of gases introduced into a chamber body, flowing gases within the chamber body toward a substrate, rotating the substrate, and unifying a center-to-edge temperature profile of the substrate by controlling the substrate temperature with a dual zone heater. A chamber for depositing a film may include a chamber body comprising one or more processing regions. The chamber body may include a gas distribution assembly having a blocker plate for delivering gases into the one or more processing regions. The blocker plate may have a first region and a second region, and the first region and second region each may have a plurality of holes. The chamber body may have a dual zone heater.Type: GrantFiled: June 24, 2016Date of Patent: December 5, 2017Assignee: APPLIED MATERIALS, INC.Inventors: Prashant Kumar Kulshreshtha, Sudha Rathi, Praket P. Jha, Saptarshi Basu, Kwangduk Douglas Lee, Martin J. Seamons, Bok Hoen Kim, Ganesh Balasubramanian, Ziqing Duan, Lei Jing, Mandar B. Pandit
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Publication number: 20170092511Abstract: Implementations disclosed herein describe a bevel etch apparatus within a loadlock bevel etch chamber and methods of using the same. The bevel etch apparatus has a mask assembly within the loadlock bevel etch chamber. During an etch process, the mask assembly delivers a gas flow to control bevel etch without the use of a shadow frame. As such, the edge exclusion at the bevel edge can be reduced, thus increasing product yield.Type: ApplicationFiled: February 2, 2016Publication date: March 30, 2017Inventors: Saptarshi BASU, Jeongmin LEE, Paul CONNORS, Dale R. DU BOIS, Prashant Kumar KULSHRESHTHA, Karthik Thimmavajjula NARASIMHA, Brett BERENS, Kalyanjit GHOSH, Jianhua ZHOU, Ganesh BALASUBRAMANIAN, Kwangduk Douglas LEE, Juan Carlos ROCHA-ALVAREZ, Hiroyuki OGISO, Liliya KRIVULINA, Rick GILBERT, Mohsin WAQAR, Venkatanarayana SHANKARAMURTHY, Hari K. PONNEKANTI
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Publication number: 20160307752Abstract: Methods for modulating local stress and overlay error of one or more patterning films may include modulating a gas flow profile of gases introduced into a chamber body, flowing gases within the chamber body toward a substrate, rotating the substrate, and unifying a center-to-edge temperature profile of the substrate by controlling the substrate temperature with a dual zone heater. A chamber for depositing a film may include a chamber body comprising one or more processing regions. The chamber body may include a gas distribution assembly having a blocker plate for delivering gases into the one or more processing regions. The blocker plate may have a first region and a second region, and the first region and second region each may have a plurality of holes. The chamber body may have a dual zone heater.Type: ApplicationFiled: June 24, 2016Publication date: October 20, 2016Inventors: Prashant Kumar KULSHRESHTHA, Sudha RATHI, Praket P. JHA, Saptarshi BASU, Kwangduk Douglas LEE, Martin J. SEAMONS, Bok Hoen KIM, Ganesh BALASUBRAMANIAN, Ziqing DUAN, Lei JING, Mandar B. PANDIT
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Patent number: 9390910Abstract: Methods for modulating local stress and overlay error of one or more patterning films may include modulating a gas flow profile of gases introduced into a chamber body, flowing gases within the chamber body toward a substrate, rotating the substrate, and unifying a center-to-edge temperature profile of the substrate by controlling the substrate temperature with a dual zone heater. A chamber for depositing a film may include a chamber body comprising one or more processing regions. The chamber body may include a gas distribution assembly having a blocker plate for delivering gases into the one or more processing regions. The blocker plate may have a first region and a second region, and the first region and second region each may have a plurality of holes. The chamber body may have a dual zone heater.Type: GrantFiled: November 20, 2014Date of Patent: July 12, 2016Assignee: APPLIED MATERIALS, INC.Inventors: Prashant Kumar Kulshreshtha, Sudha Rathi, Praket P. Jha, Saptarshi Basu, Kwangduk Douglas Lee, Martin J. Seamons, Bok Hoen Kim, Ganesh Balasubramanian, Ziqing Duan, Lei Jing, Mandar B. Pandit
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Publication number: 20160099147Abstract: Methods for modulating local stress and overlay error of one or more patterning films may include modulating a gas flow profile of gases introduced into a chamber body, flowing gases within the chamber body toward a substrate, rotating the substrate, and unifying a center-to-edge temperature profile of the substrate by controlling the substrate temperature with a dual zone heater. A chamber for depositing a film may include a chamber body comprising one or more processing regions. The chamber body may include a gas distribution assembly having a blocker plate for delivering gases into the one or more processing regions. The blocker plate may have a first region and a second region, and the first region and second region each may have a plurality of holes. The chamber body may have a dual zone heater.Type: ApplicationFiled: November 20, 2014Publication date: April 7, 2016Inventors: Prashant Kumar KULSHRESHTHA, Sudha RATHI, Praket P. JHA, Saptarshi BASU, Kwangduk Douglas LEE, Martin J. SEAMONS, Bok Hoen KIM, Ganesh BALASUBRAMANIAN, Ziqing DUAN, Lei JING, Mandar B. PANDIT
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Patent number: 8268493Abstract: The present disclosure relates to in-situ, line-of-sight measurements of partial pressure and temperature associated with at least one flow channel of a fuel cell. Tunable diode laser absorption spectroscopy (TDLAS) is employed for measurements for which water transition states sensitive to temperature and partial pressure are utilized. Measurements are achievable for a fuel cell operating under both steady-state and time-varying load conditions. For steady-state operation, the water partial pressure increases with increasing current density on a cathode side of the fuel cell due to production of water by electrochemical reaction. Temperature in a gas phase remains relatively constant since the fuel cell housing temperature is controlled externally. For non-steady-state operation of the fuel cell through a time-varying current profile, the water partial pressure responds to the load changes rapidly and follows a current profile.Type: GrantFiled: May 30, 2007Date of Patent: September 18, 2012Assignee: University of ConnecticutInventors: Baki M. Cetegen, Michael W. Renfro, Saptarshi Basu
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Publication number: 20080118783Abstract: The present disclosure relates to in-situ, line-of-sight measurements of partial pressure and temperature associated with at least one flow channel of a fuel cell. Tunable diode laser absorption spectroscopy (TDLAS) is employed for measurements for which water transition states sensitive to temperature and partial pressure are utilized. Measurements are achievable for a fuel cell operating under both steady-state and time-varying load conditions. For steady-state operation, the water partial pressure increases with increasing current density on a cathode side of the fuel cell due to production of water by electrochemical reaction. Temperature in a gas phase remains relatively constant since the fuel cell housing temperature is controlled externally. For non-steady-state operation of the fuel cell through a time-varying current profile, the water partial pressure responds to the load changes rapidly and follows a current profile.Type: ApplicationFiled: May 30, 2007Publication date: May 22, 2008Inventors: Baki M. Cetegen, Michael W. Renfro, Saptarshi Basu