Patents by Inventor Sara Aoki

Sara Aoki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Resistive random accress memory containing a conformal titanium aluminum carbide film and method of making
    Patent number: 10361366
    Abstract: A plurality of embodiments for ReRAM devices and method of making are described. According to one embodiment, the ReRAM device includes a first electrode film formed on a substrate, a metal oxide film with oxygen vacancies formed on a first electrode film, a conformal TiAlC film, oxidized by diffused oxygen atoms from the metal oxide film, formed on the metal oxide film, and a second electrode film formed on the TiAlC film. According to another embodiment, the ReRAM device includes a pair of vertical metal oxide films, a pair of vertical conformal TiAlC films formed on the pair of vertical metal oxide films, the pair of vertical conformal TiAlC films oxidized by diffused oxygen atoms from the pair of vertical metal oxide films, and an electrode film formed between the pair of vertical conformal TiAlC films.
    Type: Grant
    Filed: August 3, 2018
    Date of Patent: July 23, 2019
    Assignee: Tokyo Electron Limited
    Inventors: Takahiro Hakamata, Genji Nakamura, Sara Aoki, Toshio Hasegawa, Takamichi Kikuchi
  • RESISTIVE RANDOM ACCRESS MEMORY CONTAINING A CONFORMAL TITANIUM ALUMINUM CARBIDE FILM AND METHOD OF MAKING
    Publication number: 20190044064
    Abstract: A plurality of embodiments for ReRAM devices and method of making are described. According to one embodiment, the ReRAM device includes a first electrode film formed on a substrate, a metal oxide film with oxygen vacancies formed on a first electrode film, a conformal TiAlC film, oxidized by diffused oxygen atoms from the metal oxide film, formed on the metal oxide film, and a second electrode film formed on the TiAlC film. According to another embodiment, the ReRAM device includes a pair of vertical metal oxide films, a pair of vertical conformal TiAlC films formed on the pair of vertical metal oxide films, the pair of vertical conformal TiAlC films oxidized by diffused oxygen atoms from the pair of vertical metal oxide films, and an electrode film formed between the pair of vertical conformal TiAlC films.
    Type: Application
    Filed: August 3, 2018
    Publication date: February 7, 2019
    Inventors: Takahiro Hakamata, Genji Nakamura, Sara Aoki, Toshio Hasegawa, Takamichi Kikuchi