Abstract: Methods of manufacturing a hermetically sealed wet electrolytic capacitor and a hermetically sealed wet electrolytic capacitor are described. A method of manufacturing a wet electrolytic capacitor includes forming a cathode of the capacitor by forming a case comprising a metal substrate, the metal substrate having an alloyed surface, depositing a smooth film comprising palladium and copper as a tacking layer on the alloyed surface of the metal substrate, and depositing a rough, high surface area layer on the tacking layer to achieve a high capacitance cathode. A first terminal is electrically connected to the cathode. An anode is formed. A second terminal is electrically connected to the anode. An electrolytic solution is disposed within the case, and the case is hermetically sealed.

Abstract: A hermetically sealed capacitor and method of manufacturing are provided. The hermetically sealed capacitor includes an anode element having an anode wire and a feed through barrel, a cathode element, a first case portion having a first opening portion and a second case portion having a second opening portion. The first and second opening portions form an opening configured to mate with the feed through barrel. The first opening portion may include a slot portion configured to receive the feed through barrel. The hermetically sealed capacitor may also include electrolytic solution disposed between the first and second case portions.

Abstract: Methods of manufacturing a hermetically sealed wet electrolytic capacitor and a hermetically sealed wet electrolytic capacitor are described. A method of manufacturing a wet electrolytic capacitor includes forming a cathode of the capacitor by forming a case comprising a metal substrate, the metal substrate having an alloyed surface, depositing a smooth film comprising palladium and copper as a tacking layer on the alloyed surface of the metal substrate, and depositing a rough, high surface area layer on the tacking layer to achieve a high capacitance cathode. A first terminal is electrically connected to the cathode. An anode is formed. A second terminal is electrically connected to the anode. An electrolytic solution is disposed within the case, and the case is hermetically sealed.

Abstract: The present invention provides methods for forming a buffer layer for Group IBIIIAVIA solar cells. The buffer layer is formed using chemical bath deposition and the layer is formed in steps. A first buffer layer is formed on the absorber and the first buffer layer is then treated using etching, oxidizing, annealing or some combination thereof. Subsequently a second buffer layer is then positioned on the treated surface. Additional buffer layers can be added following treatment of the previously deposited layer.

Abstract: Described are embodiments including an apparatus that provides a thin film solar cell base structure for a photovoltaic device, a method of manufacturing a photovoltaic device, a roll to roll method of manufacturing a thin film solar cell base structure, and a ruthenium alloy sheet material.

Abstract: Aspects of the present inventions include an electrodeposition solution for deposition of a thin film that includes a Group VA material, a method of electroplating to deposit a thin film that includes a Group VA material, among others.

Abstract: A hermetically sealed wet electrolytic capacitor includes a hermetically sealed case, a cathode, an anode, and an insulator between the anode and the cathode to provide electrical insulation between the anode and the cathode. An electrolytic solution is disposed within the case. A first terminal is electrically connected to the anode and a second terminal is electrically connected to the cathode. The cathode comprises a metal substrate having an alloy layer formed with a noble metal and a noble metal/base metal electrode element layer electrochemically deposited thereon. The electrolytic solution has a conductivity between 10 and 60 mS/cm. The capacitor may be used in an implantable device.