Patents by Inventor Sashikanth Majety

Sashikanth Majety has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Structures and devices based on boron nitride and boron nitride-III-nitride heterostructures
    Patent number: 9093581
    Abstract: The present invention relates to optoelectronic device layer structures, light emitting devices, and detectors based upon heterostructures formed between hexagonal boron nitride (hNB) and III nitrides, and more particularly, to heterojunction devices capable of emitting and detecting photons in the ultraviolet (UV) and extremely ultraviolet (RUV) spectral range. The present invention also relates to neutron detectors based on epitaxially grown hBN thin films (or epitaxial layers) and hBN stacked thin films (or epitaxial layers) to satisfy the thickness required for capturing all incoming neutrons.
    Type: Grant
    Filed: May 29, 2012
    Date of Patent: July 28, 2015
    Assignee: Texas Tech University System
    Inventors: Hongxing Jiang, Sashikanth Majety, Rajendra Dahal, Jing Li, Jingyu Lin
  • Structures and Devices Based on Boron Nitride and Boron Nitride-III-Nitride Heterostructures
    Publication number: 20130292687
    Abstract: The present invention relates to optoelectronic device layer structures, light emitting devices, and detectors based upon heterostructures formed between hexagonal boron nitride (hNB) and III nitrides, and more particularly, to heterojunction devices capable of emitting and detecting photons in the ultraviolet (UV) and extremely ultraviolet (RUV) spectral range. The present invention also relates to neutron detectors based on epitaxially grown hBN thin films (or epitaxial layers) and hBN stacked thin films (or epitaxial layers) to satisfy the thickness required for capturing all incoming neutrons.
    Type: Application
    Filed: May 29, 2012
    Publication date: November 7, 2013
    Applicant: TEXAS TECH UNIVERSITY SYSTEM
    Inventors: Hongxing Jiang, Sashikanth Majety, Rajendra Dahal, Jing Li, Jingyu Lin
  • Structures and Devices Based on Boron Nitride and Boron Nitride-III-Nitride Heterostructures
    Publication number: 20130292685
    Abstract: The present invention relates to optoelectronic device layer structures, light emitting devices, and detectors based upon heterostructures formed between hexagonal boron nitride (hNB) and III-nitrides, and more particularly, to heterojunction devices capable of emitting and detecting photons in the ultraviolet (UV) and extremely ultraviolet (RUV) spectral range. The present invention also relates to neutron detectors based on epitaxially grown hBN thin films (or epitaxial layers) and hBN stacked thin films (or epitaxial layers) to satisfy the thickness required for capturing all incoming neutrons.
    Type: Application
    Filed: May 5, 2012
    Publication date: November 7, 2013
    Applicant: TEXAS TECH UNIVERSITY SYSTEM
    Inventors: Hongxing Jiang, Sashikanth Majety, Rajendra Dahal, Jing Li, Jingyu Lin