Patents by Inventor Sataoshi Oida

Sataoshi Oida has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Vertical stacking of graphene in a field-effect transistor
    Patent number: 8932919
    Abstract: A graphene field-effect transistor is disclosed. The graphene field-effect transistor includes a first graphene sheet, a first gate layer coupled to the first graphene sheet and a second graphene sheet coupled to the first gate layer opposite the first gate layer. The first gate layer is configured to influence an electric field within the first graphene sheet as well as to influence an electric field of the second graphene sheet.
    Type: Grant
    Filed: November 21, 2012
    Date of Patent: January 13, 2015
    Assignee: International Business Machines Corporation
    Inventors: Damon B. Farmer, Aaron D. Franklin, Sataoshi Oida, Joshua T. Smith
  • Vertical stacking of graphene in a field-effect transistor
    Patent number: 8809837
    Abstract: A graphene field-effect transistor is disclosed. The graphene field-effect transistor includes a first graphene sheet, a first gate layer coupled to the first graphene sheet and a second graphene sheet coupled to the first gate layer opposite the first gate layer. The first gate layer is configured to influence an electric field within the first graphene sheet as well as to influence an electric field of the second graphene sheet.
    Type: Grant
    Filed: August 20, 2013
    Date of Patent: August 19, 2014
    Assignee: International Business Machines Corporation
    Inventors: Damon B. Farmer, Aaron D. Franklin, Sataoshi Oida, Joshua T. Smith
  • VERTICAL STACKING OF GRAPHENE IN A FIELD-EFFECT TRANSISTOR
    Publication number: 20140138624
    Abstract: A graphene field-effect transistor is disclosed. The graphene field-effect transistor includes a first graphene sheet, a first gate layer coupled to the first graphene sheet and a second graphene sheet coupled to the first gate layer opposite the first gate layer. The first gate layer is configured to influence an electric field within the first graphene sheet as well as to influence an electric field of the second graphene sheet.
    Type: Application
    Filed: November 21, 2012
    Publication date: May 22, 2014
    Applicant: International Business Machines Corporation
    Inventors: Damon B. Farmer, Aaron D. Franklin, Sataoshi Oida, Joshua T. Smith
  • VERTICAL STACKING OF GRAPHENE IN A FIELD-EFFECT TRANSISTOR
    Publication number: 20140138626
    Abstract: A graphene field-effect transistor is disclosed. The graphene field-effect transistor includes a first graphene sheet, a first gate layer coupled to the first graphene sheet and a second graphene sheet coupled to the first gate layer opposite the first gate layer. The first gate layer is configured to influence an electric field within the first graphene sheet as well as to influence an electric field of the second graphene sheet.
    Type: Application
    Filed: August 20, 2013
    Publication date: May 22, 2014
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Damon B. Farmer, Aaron D. Franklin, Sataoshi Oida, Joshua T. Smith