Patents by Inventor Satish K. Khanna

Satish K. Khanna has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 4820596
    Abstract: An electrode having increased output with slower degradation is formed of a film applied to a beta-alumina solid electrolyte (BASE). The film comprises a refractory first metal M.sup.1 such as a platinum group metal, suitably platinum or rhodium, capable of forming a liquid or a strong surface adsorption phase with sodium at the operating temperature of an alkali metal thermoelectric converter (AMTEC) and a second refractory metal insoluble in sodium or the NaM.sup.1 liquid phase such as a Group IVB, VB or VIB metal, suitably tungsten, molybdenum, tantalum or niobium. The liquid phase or surface film provides fast transport through the electrode while the insoluble refractory metal provides a structural matrix for the electrode during operation. A trilayer structure that is stable and not subject to deadhesion comprises a first, thin layer of tungsten, an intermediate co-deposited layer of tungsten-platinum and a thin surface layer of platinum.
    Type: Grant
    Filed: August 6, 1987
    Date of Patent: April 11, 1989
    Assignee: California Institute of Technology
    Inventors: Roger M. Williams, Clyde P. Bankston, Terry Cole, Satish K. Khanna, Barbara Jeffries-Nakamura, Bob L. Wheeler
  • Patent number: 4726890
    Abstract: Thin films of niobium nitride with high superconducting temperature (T.sub.c) of 15.7.degree. K. are deposited on substrates held at room temperature (.about.90.degree. C.) by heat sink throughout the sputtering process. Films deposited at P.sub.Ar >12.9.+-.0.2 mTorr exhibit higher T.sub.c with increasing P.sub.N2,I, with the highest T.sub.c achieved at P.sub.N2,I =3.7.+-.0.2 mTorr and total sputtering pressure P.sub.tot =16.6.+-.0.4. Further increase of N.sub.2 injection starts decreasing T.sub.c.
    Type: Grant
    Filed: August 12, 1985
    Date of Patent: February 23, 1988
    Assignee: The United States of America as represented by the Administrator of the National Aeronautics and Space Administration
    Inventors: Sarita Thakoor, James L. Lamb, Anilkumar P. Thakoor, Satish K. Khanna
  • Patent number: 4522844
    Abstract: Disclosed is a method of coating a substrate with an amorphous metal comprising the step of bombarding a solid piece of the metal with ions of an inert gas in the presence of a magnetic field to provide a vapor of the metal which is deposited on the substrate at a sufficiently low gas pressure so that there is formed on the substrate a thin, uniformly thick, essentially pinhole-free film of the metal.
    Type: Grant
    Filed: September 30, 1983
    Date of Patent: June 11, 1985
    Assignee: The United States of America as represented by the Administrator, National Aeronautics and Space Administration
    Inventors: Satish K. Khanna, Anilkumar P. Thakoor, Roger M. Williams