Abstract: A flow resistant part having a rod shape is disposed in a raw liquid introduction path in a manner such that the raw liquid is sprayed onto a vaporization plate to reduce the conductance of the raw liquid introduction path with respect to the raw liquid. Because the pressure on an outlet side of the liquid mass flow controller is increased, and the pressure difference from the pressure on the inlet side of the liquid mass flow controller is reduced, the occurrence of cavitation can be prevented. A plurality of the flow resistant parts can be provided.

Abstract: An ion beam irradiation device includes a vacuum chamber that accommodates a transport tray which holds a substrate, a transport unit that transports the transport tray in the vacuum chamber in a transport direction, an ion beam irradiation unit that irradiates, with ion beams, a predetermined irradiation position in the vacuum chamber, and a position detector that detects a position of the transport tray. The transport tray includes a plurality of indices that are arranged in the transport direction to indicate portions of the transport tray. The position detector images each of the indices at a predetermined imaging position during transportation of the transport tray and detects a position of the transport tray relative to the imaging position based on the imaged index.

Abstract: An ion beam irradiation device includes a vacuum chamber that accommodates a transport tray which holds a substrate, a transport unit that transports the transport tray in the vacuum chamber in a transport direction, an ion beam irradiation unit that irradiates, with ion beams, a predetermined irradiation position in the vacuum chamber, and a position detector that detects a position of the transport tray. The transport tray includes a plurality of indices that are arranged in the transport direction to indicate portions of the transport tray. The position detector images each of the indices at a predetermined imaging position during transportation of the transport tray and detects a position of the transport tray relative to the imaging position based on the imaged index.

Abstract: In a catalytic CVD equipment, a holder includes an antireflective structure for preventing reflection of a radiant ray that is ejected from the catalytic wire toward the side of the substrate.

Abstract: In a catalytic CVD equipment, a holder includes an antireflective structure for preventing reflection of a radiant ray that is ejected from the catalytic wire toward the side of the substrate.

Abstract: In a catalytic CVD equipment, the control unit controls a temperature of the catalytic wires to a standby temperature at predetermined time intervals before and after the film is formed. The standby time is a predetermined temperature which is lower than the temperature of the catalytic wires when the film is formed, and is higher than room temperature.

Abstract: An electrode circuit for plasma CVD includes: an alternating-current source; a matching circuit that is connected to the alternating-current source; and parallel plate electrodes that are constituted of a pair of an anode electrode and a cathode electrode, in which the anode electrode and the cathode electrode are arranged such that electrode surfaces of the anode electrode and the cathode electrode face each other. The matching circuit, the parallel plate electrodes, and plasma generated by the parallel plate electrodes form a balanced circuit.

Abstract: A thin-film solar cell manufacturing apparatus includes a film forming chamber that is evacuated to a reduced pressure and forms a film on a substrate using a CVD method; a loading-ejecting chamber that is connected to the film forming chamber via a first opening-closing part and that is switchable between atmospheric pressure and reduced pressure; a first carrier that holds a pre-processed substrate; and a second carrier that holds a post-processed substrate, wherein the loading-ejecting chamber simultaneously stores the first carrier and the second carrier.

Abstract: A thin-film solar cell manufacturing apparatus includes a film forming chamber which stores a substrate; and an electrode unit which performs film formation using a CVD method on the substrate in the film forming chamber. The electrode unit has an anode and a cathode; and a side wall portion which holds the anode and the cathode and forms a part of a wall portion of the film forming chamber, and is attachable to and detachable from the film forming chamber.

Abstract: An apparatus for manufacturing a thin film solar cell of the present invention has a film forming chamber in which a substrate is arranged so that the film formation face of the substrate is substantially parallel to the direction of gravitational force and a film is formed on the film formation face by a CVD method; an electrode unit including a cathode unit having cathodes to which voltages are to be applied arranged on both sides thereof, and a pair of anodes each of which is arranged to face the cathodes, respectively, at a separation distance therefrom; and a conveying part which supports the substrate and conveys the substrate to between the cathode and the anode facing the cathode. The separation distance is variable.

Abstract: A thin-film solar cell manufacturing apparatus includes a film forming chamber that is evacuated to a reduced pressure and forms a film on a substrate using a CVD method; a loading-ejecting chamber that is connected to the film forming chamber via a first opening-closing part and that is switchable between atmospheric pressure and reduced pressure; transfer rail that is laid at the film forming chamber and the loading-ejecting chamber; a carrier that holds the substrate and moves along the transfer rail; and a carrier transfer mechanism that transfers the carrier, wherein, the carrier transfer mechanism is provided in the loading-ejecting chamber to transfer the carrier between the film forming chamber and the loading-ejecting chamber.

Abstract: A film formation apparatus includes: a film forming chamber in which a desired film is formed on a substrate in a vacuum; a loading-ejecting chamber fixed to the film forming chamber with a first opening-closing section interposed therebetween, being capable of reducing a pressure inside the loading-ejecting chamber so as to form a vacuum atmosphere; a second opening-closing section provided at a face opposite to the face of the loading-ejecting chamber on which the first opening-closing section is provided; and a carrier holding the substrate so that a film formation face of the substrate is substantially parallel to a direction of gravitational force, wherein the carrier or the substrate passes through the second opening-closing section, and is transported to the loading-ejecting chamber and is transported from the loading-ejecting chamber; a plurality of carriers is disposed in the loading-ejecting chamber in parallel to each other; the plurality of carriers is transported in parallel between the loading-e

Abstract: An apparatus for manufacturing a thin film solar cell of the present invention includes a film forming chamber in which a film is formed on a film formation face of a substrate using a CVD method; an electrode unit including a cathode unit having cathodes to which voltages are to be applied arranged on both sides thereof, and a pair of anodes each of which is arranged to face a different one of the cathodes, at a separation distance therefrom; a mask for covering a peripheral edge portion of the substrate; and a discharge duct installed around the cathode unit. A film formation space is formed between the cathode unit and the substrate installed on the side of the anode, an evacuation passage is formed between the mask and the cathode unit, the discharge duct and the film formation space are connected together via the evacuation passage, and a film forming gas introduced into the film formation space is evacuated from the discharge duct through the evacuation passage.

Abstract: A thin-film solar cell manufacturing apparatus, includes: a film formation space in which a substrate is disposed so that a film formation face of the substrate is substantially parallel to a direction of gravitational force, and in which a desired film is formed on the film formation face by a CVD method; a cathode unit including cathodes to which a voltage is applied, and two or more power feeding points, the cathodes being disposed at both sides of the cathode unit; and an anode distantly disposed so as to face the cathodes that are disposed at both sides of the cathode unit.

Abstract: An unprocessed substrate is conveyed to a film-processing chamber at the same time a processed substrate is conveyed to a substrate preparation chamber, reducing the substrate processing cycle, thereby increasing the yield per unit time. The substrate preparation chamber has a two-tiered structure for receiving processed substrates and unprocessed substrates. A two-tiered transfer robot allows the substrates to be removed or placed into the preparation and process chambers at the same time, thus decreasing the cycle time for processing a substrate.

Abstract: A substrate processing apparatus that includes an outer tank, an inner tank, and opposed electrodes. The inner tank is provided in the outer tank and the opposed electrodes are provided in the inner tank. A distance between the opposed electrodes can be changed in a state in which the inner tank can completely confine plasma therein. The inner tank includes first and second inner tank constituent members, and the state in which the inner tank can completely confine plasma therein is established by superposing a side wall of the second inner tank constituent member on a side wall of the first inner tank constituent member.

Abstract: Throughput is increased, the footprint is reduced, heating may be carried out in a short time, and variations in the temperature of the substrate surface may be reduced. A heating chamber 47 for heating the substrate is formed as an upper level of a load/lock chamber 13, and a cooling chamber 48 for cooling the substrate is formed as a lower level of the load/lock chamber 13. An upper heater 51 and a lower heater 56 are formed above and below the heating chamber 47. A shower plate 52 is located between the upper heater 51 and the lower heater 56. A gas heating space 50 is located between the upper heater 51 and the shower plate 52. An N2 gas introducer 42 is connected to the gas heating space 50, such that N2 gas is introduced into the gas heating space 50. The N2 gas introduced from the N2 gas introducer 42 is heated in the gas heating space 50 and is then supplied to the substrate W in the form of a shower via the shower plate 52.

Abstract: A plasma CVD apparatus comprises an outer chamber having an exhaust hole, an inner chamber disposed in the outer chamber, a reactive gas inlet pipe communicating with the inner chamber, a first exhaust pipe disposed so as to communicate with the inner chamber, the first exhaust pipe extending at least to an inner wall surface of the outer chamber, and a second exhaust pipe communicating with the exhaust hole. Preferably the forward end of the first exhaust pipe is inserted into the exhaust hole, the forward end of the first exhaust pipe projects outward beyond the inner wall surface of the outer chamber, and a spacing is formed between the first exhaust pipe and the exhaust hole. The reactive gases flow into the inner chamber through the reactive gas inlet pipe and directly flow out of the outer chamber through the first exhaust pipe, thereby preventing the reactive gases from flowing into the outer chamber.